Microsemi BFR92ALT1 Rf & microwave transistor Datasheet

BFR92ALT1
RF PRODUCTS
RF & MICROWAVE TRANSISTORS
DIVISION
DESCRIPTION
KEY FEATURES
EL
PR
The BFR92ALT1 is a low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
! Low noise-3.0dB@500MHz
! Low cost SOT23 package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
20
15
2.0
25
273
150
-55 to +150
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
Unit
V
V
V
mA
mW
C
C
IM
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
! LNA, Oscillator, Pre-Driver
SOT-23
BFR92ALT1
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
275
W W W . Microsemi .COM
! High FTau-4.5GHz
C/W
Symbol
BVCBO
BVCEO
I CBO
hFE
Test
Conditions
IC = .1mA
IC =10mA
VCB = 10V
VCB =10V
Y
AR
IN
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Min.
20
15
IE = 0
IB = 0
IE = 0
IC = 14mA
Typ.
Max.
50
40
Units
V
V
nA
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
CCB
FTau
NF
Copyright
2000
Test
Conditions
VCB = 10 V f = 1.0 MHz
VCE = 10 V IC= 14 mA f = 500MHz
VCE = 1.5 VIC= 3.0 mA f = 500MHz
Microsemi
Min.
Typ.
0.7
4.5
3.0
Max.
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Units
PF
GHz
dB
Page 1 of 1
BFR92ALT1
Symbol
Similar pages