ISC BU2507DF Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2507DF
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
15
A
IB
Base Current-Continuous
4
A
IBM
Base Current-peak
6
A
PC
Collector Power Dissipation
@TC=25℃
45
W
Tj
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.8
K/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2507DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0,L= 25mH
700
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 600mA ;IC= 0
7.5
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A ;IB= 0.8A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A ;IB= 0.8A
1.1
V
ICES
Collector Cutoff Current
VCE= BVCES; VBE= 0
VCE= BVCES; VBE= 0;TC=125℃
1.0
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 7.5V; IC= 0
160
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
14
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 4A
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1MHz
isc Website:www.iscsemi.cn
CONDITIONS
MIN
5
TYP.
MAX
UNIT
V
13.5
7
V
mA
9
2.0
68
V
pF
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