MOTOROLA BC213 Amlifier transistors (pnp) Datasheet

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by BC212/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
Symbol
BC
212
BC
213
BC
214
Unit
Collector – Emitter Voltage
VCEO
–50
–30
–30
Vdc
Collector – Base Voltage
VCBO
–60
–45
–45
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
°C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
Rating
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC212
BC213
BC214
V(BR)CEO
–50
–30
–30
—
—
—
—
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mA, IE = 0)
BC212
BC213
BC214
V(BR)CBO
–60
–45
–45
—
—
—
—
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
BC212
BC213
BC214
V(BR)EBO
–5
–5
–5
—
—
—
—
—
—
Vdc
Collector–Emitter Leakage Current
(VCB = –30 V)
BC212
BC213
BC214
ICBO
—
—
—
—
—
—
–15
–15
–15
nAdc
Emitter–Base Leakage Current
(VEB = –4.0 V, IC = 0)
BC212
BC213
BC214
IEBO
—
—
—
—
—
—
–15
–15
–15
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
BC212
BC213
BC214
40
40
100
—
—
—
—
—
—
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BC212
BC213
BC214
60
80
140
—
—
—
—
—
600
(IC = –100 mAdc, VCE = –5.0 Vdc)(1)
BC212, BC214
BC213
—
—
120
140
—
—
—
—
–0.10
–0.25
—
–0.6
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)(1)
VCE(sat)
Vdc
Base – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0 mAdc)
VBE(sat)
—
–1.0
–1.4
Vdc
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
VBE(on)
–0.6
–0.62
–0.72
Vdc
—
—
—
280
320
360
—
—
—
—
—
6.0
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
BC212
BC214
BC213
Common–Base Output Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Cob
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ , f = 1.0 kHz)
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz)
NF
Small–Signal Current Gain
(IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)
MHz
dB
BC214
—
—
2
BC212, BC213
—
—
10
60
80
140
200
—
—
—
—
—
—
—
400
hfe
BC212
BC213
BC214
BC212B
pF
—
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–1.0
VCE = –10 V
TA = 25°C
1.5
–0.9
1.0
0.7
0.5
–0.7
VBE(on) @ VCE = –10 V
–0.6
–0.5
–0.4
–0.3
VCE(sat) @ IC/IB = 10
–0.1
0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50 –100
Figure 2. “Saturation” and “On” Voltages
10
400
300
Cib
7.0
200
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
VBE(sat) @ IC/IB = 10
–0.2
0.3
0.2
–0.2
VCE = –10 V
TA = 25°C
150
100
80
60
5.0
TA = 25°C
3.0
Cob
2.0
40
30
20
–0.5
–1.0
–2.0 –3.0 –5.0
–10
–20 –30
IC, COLLECTOR CURRENT (mAdc)
1.0
–0.4 –0.6
–50
Figure 3. Current–Gain — Bandwidth Product
0.5
0.3
VCE = –10 V
f = 1.0 kHz
TA = 25°C
0.1
0.05
0.03
0.01
–0.1
–0.2
–0.5
–1.0
–2.0
IC, COLLECTOR CURRENT (mAdc)
–5.0
–1.0
–2.0
–4.0 –6.0 –10
VR, REVERSE VOLTAGE (VOLTS)
–20 –30 –40
Figure 4. Capacitances
r b′, BASE SPREADING RESISTANCE (OHMS)
1.0
hob, OUTPUT ADMITTANCE (OHMS)
TA = 25°C
–0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
–10
Figure 5. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150
140
130
VCE = –10 V
f = 1.0 kHz
TA = 25°C
120
110
100
–0.1
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0
IC, COLLECTOR CURRENT (mAdc)
–5.0
–10
Figure 6. Base Spreading Resistance
3
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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4
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC212/D
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