Smart Highside Power Switch TEMPFET BTS 100 Features ● ● ● ● P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type VDS ID RDS(on) Package Ordering Code BTS 100 – 50 V –8A 0.3 Ω TO-220AB C67078-A5007-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS – 50 V Drain-gate voltage, RGS = 20 kΩ VDGR – 50 Gate-source voltage VGS ± 20 Continuous drain current, TC = 30 °C ID – 8.0 ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V ID-ISO – 1.5 A Pulsed drain current, TC = 25 °C ID puls – 32 Short circuit current, Tj = – 55 ... + 150 °C ISC – 25 Short circuit dissipation, Tj = – 55 ... + 150 °C PSCmax 500 Power dissipation Ptot 40 Operating and storage temperature range Tj, Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Semiconductor Group W K/W Rth JC Rth JA 1 ≤ 3.1 ≤ 75 04.96 BTS 100 Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = – 0.25 mA V(BR)DSS Gate threshold voltage VGS = VDS, ID = – 1 mA VGS(th) Zero gate voltage drain current VGS = 0 V, VDS = – 50 V Tj = 25 °C Tj = 150 °C I DSS Gate-source leakage current VGS = – 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C I GSS Drain-source on-state resistance VGS = – 10 V, ID = – 5 A RDS(on) V – 50 – – – 2.5 – 3.0 – 3.5 µA – – –1 – 100 – 10 – 300 – – – 10 –2 – 100 –4 nA µA Ω – 0.25 0.3 1.5 2.3 4.0 Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = – 5 A gfs Input capacitance VGS = 0, VDS = – 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = – 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = – 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A, RGS = 50 Ω Turn-off time toff, (toff = td(off) + tf) VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A, RGS = 50 Ω Semiconductor Group S pF – 900 1200 – 350 550 – 130 230 td(on) – 20 30 tr – 60 95 td(off) – 70 90 tf – 55 75 2 ns BTS 100 Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – – 8.0 Pulsed source current I SM – – – 32 Diode forward on-voltage I F = – 16 A, VGS = 0 VSD – – 1.0 – 1.7 Reverse recovery time I F = I S, diF/dt = – 100 A/µs, VR = – 30 V t rr – 90 – Reverse recovery charge I F = I S, diF/dt = – 100 A/µs, VR = – 30 V Q rr A V ns µC – 0.23 – – – 1.4 – 1.5 – – – 10 Temperature Sensor Forward voltage I TS(on) = – 10 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C VTS(on) Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C ITS(on) Holding current, VTS(off) = – 5 V, Tj = 25 °C Tj = 150 °C IH Switching temperature VTS = – 5 V TTS(on) Turn-off time toff VTS = – 5 V, ITS(on) = – 2 mA Semiconductor Group 3 V mA – – – 10 – – – 600 – 0.05 – 0.05 – 0.1 – 0.2 – 0.5 – 0.3 150 – – 0.5 – 2.5 °C µs BTS 100 Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol Example Unit 1 2 – Drain-source voltage VDS – 15 – 30 – Gate-source voltage VGS – 10 – 8.2 – Short-circuit current ISC ≤ – 25 ≤ – 16 – A Short-circuit dissipation PSC 375 480 – W Response time Tj = 25 °C, before short circuit tSC(off) 55 55 – Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... + 150 ˚C Semiconductor Group ms Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150 °C 4 V BTS 100 Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 µs Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C Semiconductor Group 5 BTS 100 Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = – 5 A, VGS = – 10 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = – 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = – 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = – 25 V Semiconductor Group 6 BTS 100 Continuous drain current ID = f (TC) Parameter: VGS ≥ – 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = – 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz Semiconductor Group 7 BTS 100 Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T Semiconductor Group 8 BTS 100 Package Outlines TO 220 AB Standard TO 220 AB SMD Version E3045 SMD T&R E3045A 4.4 3.7 1.3 15.6 9.2 17.5 1) 2) 13.5 3) 4.6 1 12.8 2.8 9.9 9.5 Ordering Code C67078-A5007-A2 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group 9 Ordering Code C67078-A5007-A7 C67078-A5007-A12