Vishay BAS34 Small signal switching diode Datasheet

BAS33, BAS34
Vishay Semiconductors
Small Signal Switching Diodes
Features
•
•
•
•
Silicon Planar Diodes
Very low reverse current
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9367
Applications
• Protection circuits, time delay circuits, peak
follower circuits, logarithmic amplifiers
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
Type differentiation
Ordering code
Type Marking
Remarks
BAS33
VRRM = 40 V
BAS33-TAP or BAS33-TR
BAS33
Ammopack/Tape and Reel
BAS34
VRRM = 70 V
BAS34-TAP or BAS34-TR
BAS34
Ammopack/Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Part
Symbol
Value
Unit
BAS33
VR
30
V
VR
60
V
IFSM
2
A
IF
200
mA
BAS34
Peak forward surge current
tp = 1 µs
Forward continuous current
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Document Number 85541
Rev. 1.7, 17-Aug-10
Test condition
Symbol
Value
Unit
l = 4 mm, TL = constant
RthJA
350
K/W
Tj
175
°C
Tstg
- 65 to + 175
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAS33, BAS34
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse current
Part
Symbol
IF = 100 mA
VF
E ≤ 300 lx, VR
IR
E ≤ 300 lx, VR, Tj = 125 °C
IR
Forward voltage
E ≤ 300 lx, VR = 15V
Min.
Max.
Unit
1000
mV
1
IR
BAS33
Typ.
3
nA
0.5
μA
0.5
1
nA
0.5
1
nA
E ≤ 300 lx, VR = 30 V
BAS34
IR
Breakdown voltage
IR = 5 µA, tp/T = 0.01,
tp = 0.3 ms
BAS33
V(BR)
40
V
BAS34
V(BR)
70
V
Diode capacitance
VR = 0, f = 1 MHz
CD
3
pF
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
10000
I F - Forward Current (mA)
I R - Reverse Current (nA)
V R = VRRM
1000
Scattering Limit
100
10
Tj = 25 °C
100
Scattering Limit
10
1
0.1
1
0
40
80
120
160
0
200
Tj - Junction Temperature (°C)
94 9079
94 9078
Figure 1. Reverse Current vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
Package Dimensions in millimeters (inches): DO-35
3.9 (0.154) max.
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
0.55. (0.022) max
Cathode identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85541
Rev. 1.7, 17-Aug-10
[email protected], [email protected], [email protected]
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
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Revision: 12-Mar-12
1
Document Number: 91000
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