ASI AVD002F Npn silicon rf power transistor Datasheet

AVD002F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG(B)
A
DESCRIPTION:
.100 X 45°
ØD
.088 x 45°
CHAMFER
The ASI AVD002F is Designed for
C
B
FEATURES:
•
•
• Omnigold™ Metalization System
E
F
G
H
I
MAXIMUM RATINGS
250 mA
IC
J
K
MAXIMUM
DIM
MINIMUM
inches / mm
inches / mm
A
.095 / 2.41
.105 / 2.67
B
1.050 / 26.67
C
.245 / 6.22
.120 / 3.05
.140 / 3.56
.255 / 6.48
VCC
37 V
D
E
.552 / 14.02
.572 / 14.53
10 W @ TC ≤ 100 OC
F
.790 / 20.07
.810 / 20.57
PDISS
H
.003 / 0.08
.007 / 0.18
I
.052 / 1.32
.072 / 1.83
J
.120 / 3.05
.130 / 3.30
-65 OC to +200 OC
TJ
O
O
TSTG
-65 C to +150 C
θ JC
10 OC/W
CHARACTERISTICS
SYMBOL
ORDER CODE: ASI10552
O
NONETEST CONDITIONS
IC = 1 mA
BVCER
IC = 5 mA
BVEBO
IE = 1 mA
ICES
VCE = 35 V
hFE
VCE = 5.0 V
ηC
.210 / 5.33
K
TC = 25 C
BVCBO
PG
.285 / 7.24
G
VCC = 35 V
RBE = 10 Ω
IC = 100 mA
POUT = 2 W
f = 1025 - 1150 MHz
MINIMUM TYPICAL MAXIMUM
UNITS
45
V
45
V
3.5
V
30
1.0
mA
300
---
9.0
dB
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Similar pages