Panasonic DZ5X068D Silicon epitaxial planar type Datasheet

DZ5X068D
Silicon epitaxial planar type
Unit: mm
For surge absorption circuits
 Features
 Excellent rising characteristics of zener current IZ
 Low zener operating resistance RZ
 Halogen-free / RoHs compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: 02
 Basic Part Number
Dual DZ3X068D (Common anode)
 Packaging
DZ5X068D0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Total power dissipation *1
PT
200
mW
Electrostatic discharge *2
ESD
±10
kV
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
1: Cathode -1
2: Anode-1, 2, 3, 4
3: Cathode -2
Panasonic
JEITA
Code
4: Cathode -3
5: Cathode -4
Mini5-G3-B
SC-74A
MO-178
5
Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm)(4 diode total)
Solder in (0.7 mm × 1.0 mm)
*2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)
1
4
2
3
 Common Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
1.0
V
7.14
V
Forward voltage
VF
IF = 10 mA
Zener voltage *1,2
VZ
IZ = 5 mA
Zener operating resistance
RZ
IZ = 5 mA
30
W
Zener rise operating resistance
RZK
IZ = 0.5 mA
60
W
Reverse current
IR
VR = 4.0 V
0.1
µA
Temparature coefficient of zener voltage *3
SZ
IZ = 5 mA
6.46
3.1
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
* 2 : VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Publication date: July 2012
Ver. BED
1
DZ5X068D
DZ5X068D_IZ-VZ
DZ5X068D_IF-VF
IF  VF
102
Ta = 25°C
10−1
10−2
1
10−1
10−2
0
0.5
1.0
1.5
2.0
Forward voltage VF (V)
10−3
0
DZ5X068D_RZ-IZ
1
10
102
5
4
3
2
Total power dissipation PT (mW)
Thermal resistance Rth (°C/W)
40
80
120
160
Ambient temperature Ta (°C)
2
200
5
6
30
20
10
1
0
0
2
4
6
8
Zener current IZ (mA)
0
10
0
(2)
102
10
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(45 mm × 45 mm × 1 mm)
Solder in : 0.7 mm × 1.0 mm
10−1
10
Time t (s)
Ver. BED
2
3
4
5
PZSM  tW
Rth(j-l) = 120°C/W
1
10−3
1
Reverse voltage VR (V)
DZ5X__PZSM-tW
(1)
50
4
Ta = 25°C
103
100
3
Ct  VR
Rth  t
150
2
DZ5X068D_Ct-VR
DZ5X__Rth-t
Mounted on glass epoxy print board.
(4 diode total)
(45 mm × 45 mm × 1 mm)
Solder in : 0.7 mm × 1.0 mm
1
Reverse voltage VR (V)
6
PT  Ta
0
0
40
DZ5X__ PT-Ta
200
10−11
7
Zener current IZ (mA)
250
Zener voltage VZ (V)
12
Terminal capacitance Ct (pF)
Zener operating resistance RZ (Ω)
Ta = 25°C
1
10−1
8
10−9
SZ  IZ
Temparature coefficient of zener voltage SZ (mV/°C)
10
4
10−7
DZ5X068D_SZ-IZ
RZ  IZ
0
Ta = 25°C
10−5
Reverse current IR (mA)
1
10−3
Ta = 25°C
10
Zener current IZ (mA)
Forward current IF (mA)
10
IR  VR
103
Non-repetitive reverse surge power dissipation PZSM (W)
102
DZ5X068D_IR-VR
IZ  VZ
102
Ta = 25°C
10
1
10−1 2
10
103
Pulse width tW (µs)
104
DZ5X068D
Mini5-G3-B
(0.65)
0.30
Unit: mm
+0.10
−0.05
5
0.13
+0.05
−0.02
1
2
(0.95)
(0.95)
0.4 ±0.2
6°
2.8 +0.2
−0.3
1.50
+0.25
−0.05
4
3
1.9 ±0.1
2.90
+0.20
−0.05
1.1 +0.3
−0.1
0 to 0.1
1.1 +0.2
−0.1
8°
 Land Pattern (Reference) (Unit: mm)
Ver. BED
3
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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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