Infineon BF2040W Silicon n-channel mosfet tetrode Datasheet

BF2040...
Silicon N-Channel MOSFET Tetrode
• For low noise , high gain controlled
input stages up to 1GHz
• Operating voltage 5 V
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF2040
SOT143
1=S
2=D
3=G2
4=G1
-
-
NFs
BF2040R
SOT143R
1=D
2=S
3=G1
4=G2
-
-
NFs
BF2040W
SOT343
1=D
2=S
3=G1
4=G2
-
-
NFs
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
Continuous drain current
ID
40
Gate 1/ gate 2-source current
±IG1/2SM
10
Gate 1 (external biasing)
+VG1SE
7
Total power dissipation
Ptot
Value
8
Unit
V
mA
V
mW
TS ≤ 76 °C, BF2040, BF2040R
200
TS ≤ 94 °C, BF2040W
200
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
°C
Thermal Resistance
Parameter
Symbol
Channel - soldering point1)
Rthchs
Value
K/W
BF2040, BF2040R
≤ 370
BF2040W
≤ 280
1For
Unit
calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-06-01
BF2040...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
10
-
-
+V(BR)G1SS
6
-
15
+V(BR)G2SS
6
-
15
+IG1SS
-
-
50
+IG2SS
-
-
50
IDSS
-
-
50
µA
IDSX
-
15
-
mA
VG1S(p)
0.3
0.6
-
V
VG2S(p)
0.3
0.7
-
DC Characteristics
Drain-source breakdown voltage
V
ID = 20 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 , VDS = 0
Gate2-source breakdown voltage
+IG2S = 10 mA, V G1S = 0 , VDS = 0
Gate1-source leakage current
nA
VG1S = 5 V, VG2S = 0 , VDS = 0
Gate2-source leakage current
VG2S = 5 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Drain-source current
VDS = 5 V, VG2S = 4 V, R G1 = 100 kΩ
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, ID = 20 µA
2
2007-06-01
BF2040...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
37
42
-
mS
Cg1ss
-
2.9
3.4
pF
Cdss
-
1.6
-
20
23
-
dB
-
1.6
2.2
dB
45
50
-
AC Characteristics - (verified by random sampling)
Forward transconductance
gfs
VDS = 5 V, ID = 15 mA, VG2S = 4 V
Gate1 input capacitance
VDS = 5 V, ID = 15 mA, VG2S = 4 V,
f = 10 MHz
Output capacitance
VDS = 5 V, ID = 15 mA, VG2S = 4 V,
f = 10 MHz
Power gain
Gp
VDS = 5 V, ID = 15 mA, VG2S = 4 V,
f = 800 MHz
Noise figure
F
VDS = 5 V, ID = 15 mA, VG2S = 4 V,
f = 800 MHz
∆Gp
Gain control range
VDS = 5 V, VG2S = 4 ...0 V , f = 800 GHz
3
2007-06-01
BF2040...
Total power dissipation P tot = ƒ(TS)
Total power dissipation P tot = ƒ(TS)
BF2040, BFD2040R
BF2040W
220
220
mA
180
180
160
160
Ptot
Ptot
mW
140
140
120
120
100
100
80
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
75
90 105 120 °C
TS
150
TS
Drain current ID = ƒ(IG1 )
Output characteristics ID = ƒ(VDS )
VG2S = 4V
VG2S = 4 V
28
mA
26
mA
24
22
22
20
20
18
18
ID
ID
VG1S = Parameter
16
1.3V
16
14
14
1.2V
12
12
10
10
1.1V
8
8
1V
6
6
4
4
2
2
0
0
1.4V
10
20
30
40
50
60
70
µA
0
0
90
IG1
1
2
3
4
5
6
7
8
V
10
VDS
4
2007-06-01
BF2040...
Gate 1 current IG1 = ƒ(VG1S)
Gate 1 forward transconductance
VDS = 5V
gfs = ƒ(ID)
VDS = 5V, VG2S = Parameter
VG2S = Parameter
195
µA
45
mS
4V
4V
165
35
150
gfs
135
IG1
3.5V
3.5V
120
105
30
3V
25
3V
90
2.5V
20
2V
75
15
2.5V
60
45
10
2V
30
5
15
0
0
0.4
0.8
1.2
1.6
2
2.4
V
0
0
3.2
4
8
12
16
20
24
28
32 mA
VG1S
40
ID
Drain current ID = ƒ(VG1S )
Drain current ID = ƒ(VGG )
VDS = 5V
VDS = 5V, VG2S = 4V, RG1 = 80kΩ
VG2S = Parameter
(connected to VGG, VGG=gate1 supply voltage)
16
28
mA
4V
mA
3V
24
22
12
18
ID
ID
20
10
16
2V
14
8
12
6
10
8
1.5V
4
6
4
2
2
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
0
0
2
VG1S
1
2
3
V
5
VGG
5
2007-06-01
BF2040...
Drain current ID = ƒ(VGG)
Crossmodulation Vunw = (AGC)
VG2S = 4V
VDS = 5 V
RG1 = Parameter in kΩ
120
28
mA
70
24
dBµV
80
22
18
Vunw
ID
110
90
20
110
105
16
130
14
100
12
95
10
8
90
6
4
85
2
0
0
1
2
3
4
5
6
V
80
0
8
VGG=VDS
5
10
15
20
25
30
35
40 dB
50
AGC
6
2007-06-01
BF2040...
Cossmodulation test circuit
VAGC
VDS
4n7
R1
10kΩ
2.2 uH
4n7
4n7
RL
50Ω
RGEN
50Ω
4n7
50 Ω
RG1
VGG
Semibiased
7
2007-06-01
Package SOT143
BF2040...
2
0.1 MAX.
10˚ MAX.
1
1 ±0.1
0.2
0.8 +0.1
-0.05
0.4 +0.1
-0.05
A
5
0...8˚
0.2 M A
0.25 M B
1.7
0.08...0.1
1.3 ±0.1
3
2.4 ±0.15
4
B
10˚ MAX.
2.9 ±0.1
1.9
0.15 MIN.
Package Outline
Foot Print
1.2
0.8
0.9
1.1
0.9
0.8 1.2 0.8
0.8
Marking Layout (Example)
RF s
56
Manufacturer
Pin 1
2005, June
Date code (YM)
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.6
8
4
Pin 1
3.15
1.15
8
2007-06-01
Package SOT143R
BF2040...
Package Outline
2
0.2
0.08...0.15
A
+0.1
0.8 -0.05
0.4 +0.1
-0.05
0˚... 8˚
1.7
0.25
10˚ MAX.
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1.9
4
1 ±0.1
0.15 MIN.
2.9 ±0.1
M
0.2
M
A
B
Foot Print
1.2
0.8
0.9
1.1
0.9
0.8
0.8
0.8
1.2
Marking Layout (Example)
Reverse bar
2005, June
Date code (YM)
Pin 1
Manufacturer
BFP181R
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.6
8
4
Pin 1
3.15
1.15
9
2007-06-01
Package SOT343
BF2040...
Package Outline
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
+0.1
0.15 -0.05
0.6 +0.1
-0.05
4x
0.1
0.2
M
M
A
Foot Print
1.6
0.8
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
10
2007-06-01
BF2040...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11
2007-06-01
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