MIG75J7CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75J7CSB1W (600V/75A 7in1) High Power Switching Applications Motor Control Applications · Integrates inverter, brake power circuit and control circuits (IGBT drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package. · The electrodes are isolated from the case · Low thermal resistance · VCE (sat) = 1.8 V (typ.) · UL recognized: File No.E87989 · Weight: 278 g (typ.) Equivalent Circuit 20 FO 19 18 IN VD GND GND VS FO 17 15 IN VD GND GND VS OUT 16 W FO 14 IN VD GND GND VS OUT 13 OUT V 12 11 10 FO IN VD GND GND VS OUT U 9 8 7 6 5 4 3 2 1 GND IN FO VD GND IN FO VD GND IN FO VD GND VS GND VS GND VS OUT OUT B OUT N P 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 1 2001-11-13 MIG75J7CSB1W Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2 2001-11-13 MIG75J7CSB1W Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. IN (B) 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 3 2001-11-13 MIG75J7CSB1W Maximum Ratings (Tj = 25°C) Stage Characteristic Condition Supply voltage Symbol Rating Unit P-N Power terminal VCC 450 V ¾ VCES 600 V IC 75 A Collector-emitter voltage Inverter Collector current Tc = 25°C, DC Forward current Tc = 25°C, DC IF 75 A Collector power dissipation Tc = 25°C, DC PC 460 W Tj 150 °C P-N Power terminal VCC 450 V ¾ VCES 600 V IC 50 A VR 600 V ¾ Junction temperature Supply voltage Collector-emitter voltage Tc = 25°C, DC Collector current Brake ¾ Reverse voltage Forward current Tc = 25°C, DC IF 50 A Collector power dissipation Tc = 25°C PC 340 W Tj 150 °C ¾ Junction temperature Control supply voltage VD-GND Terminal VD 20 V Input voltage IN-GND Terminal VIN 20 V Fault output voltage FO-GND Terminal VFO 20 V Fault output current FO sink current IFO 14 mA Control Module Operating temperature ¾ Tc -20~ + 100 °C Storage temperature range ¾ Tstg -40~ + 125 °C V Isolation voltage AC 1 min VISO 2500 Screw torque (Terminal) M4 ¾ 2 Screw torque (Mounting) M5 ¾ 3 N･m Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE (sat) VF Test Condition VCE = 600 V VD = 15 V IC = 75 A VIN = 15 V ® 0 V Min Typ. Max Tj = 25°C ¾ ¾ 1 Tj = 125°C ¾ ¾ 10 Tj = 25°C 1.5 1.8 2.2 Tj = 125°C ¾ 2.0 ¾ ¾ 1.8 2.2 ¾ 1.3 2.2 ¾ 0.25 ¾ ¾ 0.2 ¾ ¾ 1.1 2.1 ¾ 0.2 ¾ IF = 75 A, Tj = 25°C ton tc (on) Switching time trr VCC = 300 V, IC = 75 A VD = 15 V, VIN = 15 V « 0 V Tj = 25°C, Inductive load toff (Note 1) tc (off) Unit mA V V ms Note 1: Switching time test circuit & timing chart 4 2001-11-13 MIG75J7CSB1W 2. Brake stage Characteristics Collector cut-off current Symbol ICEX Collector-emitter saturation voltage VCE (sat) Reverse current Forward voltage Test Condition Min Typ. Max Tj = 25°C ¾ ¾ 1 Tj = 125°C ¾ ¾ 10 Tj = 25°C ¾ 1.8 2.2 Tj = 125°C ¾ 2.0 ¾ Tj = 25°C ¾ ¾ 1 Tj = 125°C ¾ ¾ 10 1.5 1.9 2.3 ¾ 1.3 1.8 ¾ 0.65 ¾ ¾ 0.8 ¾ ¾ 1.1 2.1 ¾ 0.2 ¾ Min Typ. Max ¾ 13 17 ¾ 52 68 1.4 1.6 1.8 2.2 2.5 2.8 ¾ 10 12 ¾ ¾ 0.1 VD = 15 V, Tj < = 125°C 120 ¾ ¾ 80 ¾ ¾ VD = 15 V, Tj < = 125°C 120 ¾ ¾ 80 ¾ ¾ ¾ 5 ¾ 110 118 125 ¾ 98 ¾ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit Inverter IGBT ¾ ¾ 0.270 Inverter FRD ¾ ¾ 0.313 Brake IGBT ¾ ¾ 0.360 Brake FRD ¾ ¾ 0.600 Compound is applied ¾ 0.017 ¾ VCE = 600 V VD = 15 V IC = 50 A VIN = 15 V ® 0 V IR VR = 600 V VF IF = 50 A, Tj = 25°C ton tc (on) Switching time trr VCC = 300 V, IC = 50 A VD = 15 V, VIN = 15 V « 0 V Tj = 25°C, Inductive load toff (Note 1) tc (off) Unit mA V mA V ms Note 1: Switching time test circuit & timing chart 3. Control stage (Tj = 25°C) Characteristics Control circuit current Symbol High side ID (H) Low side ID (L) Input on signal voltage VIN (on) Input off signal voltage VIN (off) Protection IFO (on) Normal IFO (off) Fault output current Over current protection trip level Inverter OC Brake Short circuit protection trip Inverter level Brake Over current cut-off time SC toff (OC) Over temperature protection Trip level Reset level OTr Control supply under voltage protection Trip level UV Reset level UVr Test Condition VD = 15 V VD = 15 V VD = 15 V VD = 15 V Case temperature tFO mA V OT Fault output pulse width Unit ¾ VD = 15 V mA A A ms °C V 4. Thermal resistance (Tc = 25°C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 5 °C/W °C/W 2001-11-13 MIG75J7CSB1W Switching Time Test Circuit Intelligent power module TLP559 P VD 0.1 mF 15 kW OUT IN VS 10 mF 15 V GND GND U (V, W, B) VCC VD IF = 16mA 0.1 mF 15 kW OUT IN PG VS 10 mF 15 V GND N GND Timing Chart Input pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% toff 10% 10% tc (off) ton 6 20% Irr trr 10% tc (on) 2001-11-13 MIG75J7CSB1W 5. Recommended conditions for application Characteristics Supply voltage Symbol VCC Test Condition P-N Power terminal Min Typ. Max Unit ¾ 300 400 V 13.5 15 16.5 V Control supply voltage VD VD-GND Signal terminal Carrier frequency fc PWM Control ¾ ¾ 20 kHz Switching time test circuit (See page.6) (Note 2) 3 ¾ ¾ ms Dead time tdead Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 7 2001-11-13 MIG75J7CSB1W IC – VCE IC – VCE 150 150 VD = 17 V 13 V 125 125 (A) 15 V (A) IC 100 Collector current IC Collector current VD = 17 V 13 V 75 50 25 15 V 100 75 50 25 Common emitter Common emitter Tj = 25°C 0 0 1 2 Tj = 125°C 3 Collector-emitter voltage 0 0 4 VCE (V) 1 2 3 Collector-emitter voltage Switching time – IC 4 VCE (V) Switching time – IC 10 10 5 5 3 3 (ms) 1 Switching time Switching time (ms) ton ton toff 0.5 0.3 tc (on) tc (off) 0.1 Tj = 25°C 0.05 0.01 0 20 40 60 Collector current IC 80 0.5 tc (on) 0.3 tc (off) 0.1 Tj = 125°C 0.05 VCC = 300 V VD = 15 V L-Load 0.03 toff 1 VCC = 300 V VD = 15 V L-Load 0.03 0.01 0 100 20 (A) 40 Collector current IF – VF IC 100 (A) Peak reverse recovery current Irr (A) Peak reverse recovery time trr (´10ns) 100 (A) 125 Forward current IF 80 trr, Irr – IF 150 100 75 50 Common cathode :Tj = 25°C :Tj = 125°C 25 0 0 60 1 2 Forward voltage 3 VF Irr 10 (V) Common cathode 3 :Tj = 25°C :Tj = 125°C 1 0 4 trr 30 20 40 Forward current 8 60 80 IF 100 (A) 2001-11-13 MIG75J7CSB1W OC – TC ID (H) – fc (mA) High side control circuit current ID (H) Over current protection trip level OC (A) 300 Inverter stage 200 Brake stage 100 VD = 15 V 0 0 25 50 75 100 Case temperature TC 125 150 30 25 20 15 10 5 VD = 15 V Tj = 25°C 0 0 5 (°C) 10 Carrier frequency fc ID (L) – fc (mA) 15 20 25 (kHz) Reverse bias SOA 100 140 90 OC (A) 100 IC 70 60 Collector current Low side control circuit current ID (L) 120 80 50 40 30 80 60 40 20 VD = 15 V Tj = 25°C 10 20 Tj < = 125°C VD = 15 V 0 0 5 10 15 Carrier frequency fc 20 0 0 25 100 (kHz) 400 500 Collector-emitter voltage VCE Tc = 25°C 0.5 Diode 1 Transistor 0.1 0.05 0.03 0.01 0.005 0.003 0.01 0.1 Pulse width 1 tw 600 700 (V) Tc = 25°C Diode 0.5 0.3 Transient thermal resistance Rth (t) Transient thermal resistance Rth (t) 0.3 0.001 0.001 300 Rth (t) – tw Brake stage 1 (°C/W) (°C/W) Rth (t) – tw Inverter stage 200 10 (s) Transistor 0.1 0.05 0.03 0.01 0.005 0.003 0.001 0.001 0.01 0.1 Pulse width 9 1 tw 10 (s) 2001-11-13 MIG75J7CSB1W Turn off loss - IC 5 5 3 3 (mJ) 10 Eoff 1 0.5 0.3 Turn off loss Turn on loss Eon (mJ) Turn on loss - IC 10 0.1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 0.05 0.03 0.01 0 20 40 Collector current 60 IC 80 1 0.5 0.3 0.1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 0.05 0.03 0.01 0 100 20 40 Collector current (A) 10 60 IC 80 100 (A) 2001-11-13 MIG75J7CSB1W RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 11 2001-11-13