Microsemi APTM120A80FT1G Phase leg mosfet power module Datasheet

APTM120A80FT1G
VDSS = 1200V
RDSon = 800mΩ typ @ Tj = 25°C
ID = 14A @ Tc = 25°C
Phase leg
MOSFET Power Module
5
6
Application
11
•
•
•
•
Q1
7
8
Features
3
4
Q2
NTC
•
9
10
1
2
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
12
•
•
•
Power MOS 8™ Fast FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
•
•
•
•
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
•
•
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
1200
14
10
90
±30
960
357
12
Unit
V
December, 2007
ID
Parameter
Drain - Source Breakdown Voltage
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
APTM120A80FT1G – Rev 0
Symbol
VDSS
APTM120A80FT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VDS = 1200V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 12A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Min
3
Typ
800
4
Max
250
1000
960
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 12A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Min
Typ
6696
615
80
pF
260
nC
42
120
45
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 12A
RG = 2.2Ω
27
ns
145
42
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery X
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 12A
IS = - 12A
VR = 100V
diS/dt = 100A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.3
3.5
Max
14
10
1.1
25
270
640
Unit
A
V
V/ns
ns
µC
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2–5
APTM120A80FT1G – Rev 0
December, 2007
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 12A di/dt ≤ 1000A/µs VDD ≤ 800V Tj ≤ 125°C
APTM120A80FT1G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
Max
0.35
150
125
100
4.7
80
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
RT =
Min
Typ
50
3952
Max
Unit
kΩ
K
R25
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦
⎣
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–5
APTM120A80FT1G – Rev 0
December, 2007
SP1 Package outline (dimensions in mm)
APTM120A80FT1G
Typical Performance Curve
Low Voltage Output Characteristics
Low Voltage Output Characteristics
20
VGS=10V
25
TJ=125°C
TJ=25°C
ID, Drain Current (A)
20
15
10
TJ=125°C
5
0
15
VGS=6, 7, 8 &9V
5V
10
5
4.5V
0
0
5
10
15
20
0
Normalized RDS(on) vs. Temperature
15
20
25
30
Transfert Characteristics
20
3
VGS=10V
ID=12A
2.5
2
1.5
1
0.5
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
15
TJ=125°C
10
TJ=25°C
5
0
0
50
75
100
125
0
150
1
3
4
5
6
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
12
10000
ID=12A
TJ=25°C
VDS=240V
Ciss
VDS=600V
8
VDS=960V
6
4
2
C, Capacitance (pF)
10
2
1000
Coss
100
Crss
10
0
0
40
80
120
160
200
240
280
Gate Charge (nC)
0
50
100
150
200
VDS, Drain to Source Voltage (V)
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4–5
December, 2007
25
TJ, Junction Temperature (°C)
VGS, Gate to Source Voltage
10
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
VDS, Drain to Source Voltage (V)
5
APTM120A80FT1G – Rev 0
ID, Drain Current (A)
30
APTM120A80FT1G
ISD, Reverse Drain Current (A)
Drain Current vs Source to Drain Voltage
50
40
TJ=125°C
30
20
10
TJ=25°C
0
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Source to Drain Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.9
0.3
0.7
0.2
0.5
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APTM120A80FT1G – Rev 0
December, 2007
rectangular Pulse Duration (Seconds)
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