TOSHIBA TPC8012-H

TPC8012-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
TPC8012-H
Switching Regulator Applications
DC／DC Converter Applications
Unit: mm
•
Low drain-source ON-resistance: RDS (ON) = 0.28 Ω (typ.)
•
High forward transfer admittance: |Yfs| = 1.35 S (typ.)
•
Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
•
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
200
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
200
V
Gate-source voltage
VGSS
±30
V
Drain current
DC
(Note 1)
ID
1.8
Pulse
(Note 1)
IDP
7.2
PD
1.9
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
A
W
PD
1.0
W
EAS
2.05
mJ
IAR
1.8
A
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8012-H
Thermal Characteristics
Characteristic
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
Max
Unit
Rth (ch-a)
65.8
°C/W
Rth (ch-a)
125
°C/W
Marking (Note 5)
TPC8012
H
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 1.8 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
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TPC8012-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0 V
⎯
⎯
100
μA
ID = 10 mA, VGS = 0 V
200
⎯
⎯
V
Drain-source breakdown voltage
V (BR) DSS
Vth
VDS = 10 V, ID = 1 mA
3.0
⎯
5.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 0.9 A
⎯
0.28
0.40
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.9 A
0.65
1.35
⎯
S
Input capacitance
Ciss
⎯
440
⎯
Reverse transfer capacitance
Crss
⎯
80
⎯
Output capacitance
Coss
⎯
260
⎯
⎯
23
⎯
⎯
28
⎯
Gate threshold voltage
tr
Turn-on time
ton
50 Ω
Switching time
Fall time
tf
Turn-off time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge 1
Qgs
Gate-drain (“Miller”) charge
Qgd
ID = 0.9 A
VOUT
VGS 10 V
0V
RL = 111 Ω
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
pF
ns
⎯
22
⎯
⎯
73
⎯
⎯
11
⎯
⎯
6
⎯
⎯
5
⎯
Test Condition
Min
Typ.
Max
⎯
⎯
⎯
7.2
A
⎯
⎯
−1.5
V
VDD ∼
− 100 V
<
Duty = 1%, tw = 10 μs
VDD ∼
− 160 V, VGS = 10 V,
ID = 1.8 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse
Symbol
(Note 1)
IDRP
VDSF
IDR = 1.8 A, VGS = 0 V
3
Unit
2006-01-17
TPC8012-H
ID – VDS
ID – VDS
5
8
Common source
Ta = 25°C
Pulse test
7.6
4
15
7.0
ID
7.3
2
6.6
1
6
3
8
7.6
Common source
Ta = 25°C
Pulse test
7.3
10
(A)
10
Drain current
Drain current
ID
(A)
15
5
4
7
3
6.6
2
6
1
VGS = 5 V
0
0
1
2
3
Drain-source voltage
4
VDS
0
5
0
(V)
4
8
Drain-source voltage
ID – VGS
6
(V)
Drain-source voltage
3
Ta = −55°C
2
100
1
25
0
2
6
4
Gate-source voltage
(V)
Common source
Ta = 25°C
Pulse test
0.8
8
VGS
0.6
ID = 1.8 A
0.4
0.9
0.2
0
10
0.45
0
(V)
3
6
1
Drain-source ON-resistance
RDS (ON) (Ω)
Common source
VDS = 10 V
Pulse test
10
25
Ta = −55°C
100
1
0.1
0.1
1
Drain current
12
VGS
15
(V)
RDS (ON) – ID
|Yfs|
(S)
100
9
Gate-source voltage
|Yfs| – ID
Forward transfer admittance
VDS
VDS
(A)
Drain current
ID
4
0
20
16
VDS – VGS
1.0
Common source
VDS = 10 V
Pulse test
5
12
ID
VGS = 10 V
0.1
0.01
0.1
10
(A)
Common source
Ta = 25°C
Pulse test
1
Drain current
4
10
ID
(A)
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TPC8012-H
RDS (ON) – Ta
IDR – VDS
1
10
Common source
Ta = 25°C
Pulse test
(A)
Pulse test
0.6
ID = 2.8A,5.5A,11A
0.4
VGS = 10 V
0.2
0
−80
−40
0
40
Ambient temperature
120
Ta
1
VGS = 0 V
0.1
160
−0.2
0
−0.4
−0.6
−0.8
Drain-source voltage
−1.2
−1.0
VDS
(V)
80
120
Vth – Ta
Vth (V)
Gate threshold voltage
1000
Ciss
Coss
100
Crss
Common source
Ta = 25°C
f = 1 MHz
VGS = 0 V
4.0
3.0
2.0
Common source
1.0
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
10
VDS
200
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
Drain-source voltage
1.2
(2)
0.8
0.4
0
0
40
80
Ambient temperature
(°C)
120
Ta
160
Common source
ID = 1.8 A
Ta = 25°C
Pulse test
VDS
VDD = 40 V
120
160 V
80
8
40
4
4
8
Total gate charge
(°C)
5
16
12
80 V
0
0
160
20
VGS
(W)
(1)
Ta
160
Dynamic input/output
characteristics
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
1.6
40
(V)
PD – Ta
2.0
0
(V)
Drain-source voltage
−40
Ambient temperature
100
12
Qg
16
Gate-source voltage
1
(V)
Capacitance
3
5.0
10
0.1
PD
4.5
(°C)
C
(pF)
80
10
1
Capacitance – VDS
10000
Drain power dissipation
Drain reverse current
IDR
0.8
VDS
Drain-source ON-resistance
RDS (ON) (Ω)
Common source
0
20
(nC)
2006-01-17
TPC8012-H
rth− tw
1000
Transient thermal impedance
rth (°C/W)
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
100
(1)
10
1
Single - pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
10
Drain current
ID
(A)
ID MAX (Pulse) *
t =1 ms *
10 ms *
1
0.1
0.01
0.1
VDSS
MAX
* Single-pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
1
10
Drain-source voltage
100
VDS
1000
(V)
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2006-01-17
TPC8012-H
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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