Siemens BAS40-05W Silicon schottky diode (general-purpose diodes for high-speed switching circuit protection voltage clamping) Datasheet

BAS 40W
Silicon Schottky Diode
●
●
●
●
General-purpose diodes for
high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
Type
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BAS 40-04W
BAS 40-05W
BAS 40-06W
Q62702-A1065
Q62702-A1066
Q62702-A1067
A1
A1
C1
C1
A2
C2
Marking
C1/A2 44s
C1/C2 45s
A1/A2 46s
Package1)
SOT-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
VR
40
V
Forward current
IF
120
mA
Surge forward current, t ≤ 10 ms
IFSM
200
mA
Total power dissipation TS ≤ 106 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Operating temperature range
Top
– 55 … + 150
°C
Storage temperature range
Tstg
– 55 … + 150
°C
Junction-ambient2)
Rth JA
≤ 395
K/W
Junction-soldering point
Rth JS
≤ 175
K/W
Thermal Resistance
1) For detailed information see chapter Package Outlines.
2) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2 Cu.
Semiconductor Group
1
02.96
BAS 40W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Value
min.
typ.
Unit
max.
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
V(BR)
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
VF
Reverse current
VR = 30 V
VR = 40 V
IR
Diode capacitance
VR = 0 V, f = 1 MHz
CT
Charge carrier life time IF = 25 mA
τ
Differential forward resistance
RF
V
40
Semiconductor Group
–
mV
250
350
600
310
450
720
380
500
1000
µA
–
–
–
–
1
10
pF
–
3
5
–
10
–
–
10
–
–
2
–
ps
Ω
IF = 10 mA, f = 10 kHz
Series inductance
–
LS
2
nH
BAS 40W
Forward current IF = f (VF)
Reverse current IR = f (VR)
Diode capacitance CT = f (VR)
Differential forward resistance
RF = f (IF)
Semiconductor Group
3
BAS 40W
Forward current IF = f (TA; TS*)
*Package mounted on epoxy
Permissible load RthJS = f (tp)
Permissible Pulse load IFmax/IFDC = f (tp)
Semiconductor Group
4
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