BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E SOT89 BCV49 EG 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV29 30 BCV49 60 Collector-base voltage Unit VCBO BCV29 40 BCV49 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp ≤ 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 1 W 150 °C mA TS ≤ 130 °C Junction temperature Tj Storage temperature Tstg 1 -65 ... 150 2011-10-05 BCV29, BCV49 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 20 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCV29 30 - - IC = 10 mA, IB = 0 , BCV49 60 - - IC = 100 µA, IE = 0 , BCV29 40 - - IC = 100 µA, IE = 0 , BCV49 80 - - 10 - - Collector-base breakdown voltage Unit V V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 30 V, IE = 0 , BCV29 - - 0.1 VCB = 60 V, IE = 0 , BCV49 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 °C, BCV29 - - 10 VCB = 60 V, IE = 0 , TA = 150 °C, BCV49 - - 10 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain1) - hFE IC = 100 µA, VCE = 1 V, BCV29 4000 - - IC = 100 µA, VCE = 1 V, BCV49 2000 - - IC = 10 mA, VCE = 5 V, BCV29 10000 - - IC = 10 mA, VCE = 5 V, BCV49 4000 - - IC = 100 mA, VCE = 5 V, BCV29 20000 - - IC = 100 mA, VCE = 5 V, BCV49 10000 - - IC = 0.5 A, VCE = 5 V, BCV29 4000 - - IC = 0.5 A, VCE = 5 V, BCV49 2000 - - VCEsat - - 1 VBEsat - - 1.5 Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA 2 2011-10-05 BCV29, BCV49 1Pulse test: t < 300µs; D < 2% Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 150 - MHz Ccb - 3 - pF AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 3 2011-10-05 BCV29, BCV49 DC current gain hFE = ƒ(IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 1000 BCV 29/49 EHP00325 5 10 3 ΙC EHP00322 mA 125 ˚C 10 5 BCV 29/49 150 ˚C 25 ˚C -50 ˚C 10 2 25 ˚C 5 5 -55 ˚C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 10 0 mA 10 3 0 0.5 1.0 V ΙC V CEsat Collector cutoff current ICBO = ƒ(TA) VCB = VCEmax Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 1000 10 3 ΙC BCV 29/49 1.5 EHP00323 10 4 BCV 29/49 EHP00318 nA mA Ι CBO 150 ˚C 25 ˚C -50 ˚C 10 2 max 10 3 5 10 2 typ 10 1 10 1 5 10 0 0 1.0 2.0 V 10 0 3.0 V BEsat 0 50 100 ˚C 150 TA 4 2011-10-05 BCV29, BCV49 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 BCV 29/49 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00321 19 pF MHz CCB/CEB fT 15 13 11 10 2 CEB 9 5 7 5 CCB 3 10 1 10 0 10 1 10 2 mA 1 0 10 3 4 8 12 16 V 22 VCB/VEB ΙC Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 1200 5 BCV 29/49 Ptot max Ptot DC mW D= Ptot tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 800 5 600 10 1 400 EHP00319 5 200 0 0 15 30 45 60 75 90 105 120 °C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-05 Package SOT89 BCV29, BCV49 Package Outline 4.5 ±0.1 45˚ B 1.5 ±0.1 1) 1.6 ±0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10˚ MAX. 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 0.25 ±0.05 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 6 1.6 2011-10-05 BCV29, BCV49 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-10-05