PANASONIC 2SK0198

Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
Unit: mm
0.40+0.10
–0.05
■ Features
0.16+0.10
–0.06
0.4±0.2
5˚
1.50+0.25
–0.05
2.8+0.2
–0.3
3
● High mutual conductance gm
● Low noise type
● Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
(0.65)
2
1
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
Ratings
Unit
Drain to Source voltage
VDSX
Symbol
30
V
Gate to Drain voltage
VGDO
−30
V
Drain current
ID
20
mA
Gate current
IG
10
mA
Allowable power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
Parameter
1.1+0.2
–0.1
■ Absolute Maximum Ratings (Ta = 25°C)
1.1+0.3
–0.1
10˚
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol (Example): 1O
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
IDSS
*
Gate to Source leakage current
IGSS
Gate to Source cut-off voltage
VGSC
Mutual conductance
gm
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
Noise figure
*
NV
Conditions
VDS = 10 V, VGS = 0
min
typ
0.5
VGS = −30 V, VDS = 0
VDS = 10 V, ID = 10 µA
VDS = 10 V, ID = 0.5 mA, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 30 V, ID = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
− 0.1
4
13
max
Unit
12
mA
−100
nA
−1.5
V
mS
14
pF
3.5
pF
60
mV
IDSS rank classification
Runk
P
Q
R
IDSS (mA)
0.5 to 3
2 to 6
4 to 12
Marking Symbol
1OP
1OQ
1OR
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SJF00006BED
1
2SK0198
PD  T a
ID  VDS
9.6
200
8.0
120
80
6
Drain current ID (mA)
160
VGS = 0 V
5
4
− 0.1 V
3
− 0.2 V
2
− 0.3 V
40
1
20
40
60
80
100 120 140 160
0
Ambient temperature Ta (°C)
2
4
gm  VGS
6
8
10
−25°C
IDSS = 5.0 mA
4
16
12
2.0 mA
8
4
0
0
Gate to source voltage VGS (V)
1
2
Crss  VDS
4
5
6
7
8
12
VGS = −3 V
f = 1 MHz
Ta = 25°C
3
2
1
VDS = 10 V
ID = 5.2 mA
Ta = 25°C
10
4
8
6
Rg = 500 Ω
4
2
1 kΩ
0
0
10
30
100
Drain to source voltage VDS (V)
− 0.2
0
1
10
102
103
Frequency f (Hz)
SJF00006BED
f = 1 MHz
VGS = −3 V
Ta = 25°C
8
6
Ciss
4
Coss
2
0
1
3
10
30
100
Drain to source voltage VDS (V)
NF  f
Noise figure NF (dB)
Reverse transfer capacitance (Common source) Crss (pF)
3
Drain current ID (mA)
5
− 0.4
Ciss, Coss  VDS
0
− 0.2
− 0.6
10
2.0 mA
− 0.4
− 0.8
Gate to source voltage VGS (V)
Input capacitance (Common source),
Output capacitance (Common source) Ciss,Coss (pF)
Mutual conductance gm (mS)
12
3
25°C
0
−1.0
12
VDS = 10 V
IDSS = 5.0 mA Ta = 25°C
16
1
Ta = 75°C
gm  ID
VDS = 10 V
Ta = 25°C
− 0.6
3.2
1.6
20
0
− 0.8
4.8
Drain to source voltage VDS (V)
20
8
6.4
− 0.4 V
0
0
2
VDS = 10 V
Ta = 25°C
7
0
Mutual conductance gm (mS)
ID  VGS
8
Drain current ID (mA)
Allowable power dissipation PD (mW)
240
105
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2001 MAR