SAVANTIC BD543B Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BD543/A/B/C
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type BD544/A/B/C
·8 A continuous collector current
·10 A peak Collector current
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD543
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
BD543A
VALUE
40
Open emitter
60
BD543B
80
BD543C
100
BD543
40
BD543A
UNIT
Open base
60
BD543B
80
BD543C
100
Open collector
V
V
5
V
IC
Collector current
8
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
-65~150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
BD543/A/B/C
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD543
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
40
BD543A
60
IC=30mA ;IB=0
V
BD543B
80
BD543C
100
VCEsat-1
Collector-emitter saturation voltage
IC=3A ;IB=0.3A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=5A ;IB=1A
0.5
V
VCEsat-3
Collector-emitter saturation voltage
IC=8A ;IB=1.6A
1
V
VBE
Base-emitter on voltage
IC=5A ; VCE=4V
1.6
V
ICEO
Collector
cut-off current
0.7
mA
1
mA
BD543/543A
VCE=30V;IB=0
BD543B/543C
VCE=60V;IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
60
hFE-2
DC current gain
IC=3A ; VCE=4V
40
hFE-3
DC current gain
IC=5A ; VCE=4V
15
Switching times
ton
Turn-on time
toff
Turn-off time
IC=6A;
IB1=-IB2=0.6A
RL=5>
2
0.6
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD543/A/B/C
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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