Rohm BA12003BF-E2 High voltage, high current darlington transistor array Datasheet

BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
High voltage, high current Darlington
transistor array
BA12001B / BA12003B / BA12003BF / BA12004B
The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor
arrays consisting of seven circuits of Darlington transistors.
Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive
loads such as relay coils, attachments can be kept to a minimum.
With an output sustain voltage as high as 60V and an output current (sink current) of 500mA, this product is ideal for use
with various drivers and as an interface with other elements.
!Applications
Drivers for LEDs, lamps, relays and solenoids
Interface with other elements
!Features
1) High output current. (IOUT=500mA Max.)
2) High output sustain voltage. (VOUT=50V Max.)
3) Seven Darlington transistors built in.
4) Built-in surge-absorbing clamp diode.
(Note : Refer to the “Reference items when using in application.” )
!Block diagram
IN1 1
16 OUT1
IN2 2
15 OUT2
IN3 3
14 OUT3
IN4 4
13 OUT4
IN5 5
12 OUT5
IN6 6
11 OUT6
IN7 7
10 OUT7
GND 8
9
COM
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!Internal circuit configuration
COM
OUT
COM
OUT
IN
2.7kΩ
IN
7.2kΩ
7.2kΩ
3kΩ
3kΩ
GND
GND
Fig.1 BA12001B
Fig.2 BA12003B / BF
COM
IN
OUT
10.5kΩ
7.2kΩ
3kΩ
GND
Fig.3 BA12004B
!Absolute maximum ratings (Ta=25°C)
Parameter
Power supply voltage
Symbol
Limits
Unit
VCE
60
V
Input voltage
other than BA12001B
VIN
−0.5∼+30
V
Input current
BA12001B
IIN
25
mA / unit
Output current
IOUT
500
mA / unit
Ground pin current
IGND
2.3∗1
Power dissipation
DIP package
SOP package
Diode reverse voltage
A
1250∗2
Pd
mW
625∗3
VR
60
V
Diode forward current
IF
500
mA
Operating temperature
Topr
−25∼+75
˚C
Storage temperature
Tstg
−55∼+150
˚C
∗1 Pulse width ≤ 20ms, duty cycle ≤ 10%, same current for all 7 circuits
∗2 Reduced by 10mW for each increase in Ta of 1˚C over 25˚C .
∗3 Reduced by 50mW for each increase in Ta of 1˚C over 25˚C .
!Recommended operating conditions (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Conditions
Output current
Parameter
IOUT
−
−
350
mA
Fig.9, 10
Power supply voltage
VCE
−
−
55
V
−
Input voltage (excluding BA12001B)
VIN
−
−
30
V
−
Input current (BA12001B only)
IIN
−
−
25
mA / unit
−
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Output leakage current
IL
−
0
10
µA
VCE = 60V
DC current transfer ratio
hFE
1000
2400
−
V
VCE = 2V, IOUT = 350mA
0.94
1.1
Output saturation voltage
VCE(sat)
−
1.14
1.3
1.46
1.6
1.75
2
2.53
5
1.91
2.4
2.75
6
2.17
3.4
3.27
8
0.90
1.35
0.39
0.5
BA12003B / BF
IOUT = 100mA, IIN = 250µA
IOUT = 200mA, IIN = 350µA
V
IOUT = 350mA, IIN = 500µA
VIN
−
VIN
−
VIN
−
IIN
−
IR
−
0
50
Diode forward voltage
VF
−
1.73
2
V
IF = 350mA
Input capacitance
CIN
−
30
−
pF
VIN = 0V, f = 1MHz
BA12004B
BA12003B / BF
Input voltage
BA12004B
BA12003B / BF
BA12004B
BA12003B / BF
Input current
BA12004B
Diode reverse current
V
VCE = 2V, IOUT = 100mA
V
VCE = 2V, IOUT = 200mA
V
VCE = 2V, IOUT = 350mA
mA
VIN = 3.85V
VIN = 5V
µA
VR = 60V
Note: Input voltage and input current for BA12001 vary based on external resistor.
!Measurement circuits
(1) Output leakage current IL
OPEN
(2) DC current transfer ratio
Output saturation voltage
hFE = IO
II
VCE (sat)
(3) Input voltage VIN
OPEN
OPEN
OPEN
IL
IO
II
IO
VCE
VI
VCE
VCE (sat)
(4) Input current IIN
(5) Diode reverse current
IR
(6) Diode forward voltage IF
OPEN
IR
OPEN
VR
OPEN
IF
OPEN
VF
VI
OPEN
OPEN
(7) Input capacitance CIN
OPEN
f
Capacitance
bridge
LO
HI
VI
OPEN
TEST SIGNAL LEVEL 20mVrms
Fig.4
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!Application example
RY
LED
(2) LED driver
(1) Relay driver
Fig.5
!Application notes
The BA12001B is a transistor array which can be directly coupled to a general logic circuit such as PMOS, CMOS, or
TTL.
A current limiting resistor needs to be connected in series with the input.
The BA12003B / BF can be coupled directly to TTL or CMOS output (when operating at 5V). In order to limit the input
current to a stable value, resistors are connected in series to each of the inputs.
The BA12004B is designed for direct coupling to CMOS or PMOS output using a 6 to 15V power supply voltage. In order
to limit the input current to a stable value, resistors are connected in series to each of the inputs.
The load for each of these products should be connected between the driver output and the power supply. To protect the
IC from excessive swing voltage, the COM pin (Pin 9) should be connected to the power supply.
Fig.6 shows the configuration of the on-chip diode for surge absorption.
In the construction of the surge-absorbing diode,there is an N-P junction between the N-layer (N-well + BL) and the
substrate (P-sub) so that when the diode is on, current flows from the output pin to the substrate. In terms of the vertical
construction, this diode is configured similar to a PNP transistor. When using the surge-absorbing diode, take appropriate
measures regarding the thermal characteristics of the design considering the current that will be handled.
Also, if motor back-rush current or other conditions that will result continued surge current to flow to the surge-absorbing
diode can be foreseen, we strongly recommend connecting a Schottky barrier diode (or other type of diode with a low
foward voltage) in parallel with the surge-absorbing diode to construct a bypass route for the surge current.
OUT
COM
In-flow current to the surge-absorbing diode
N+
P+
N+
IDi
ISO
P
ISO
Isub
N-well
N+
B/L
P-sub
Fig.6 Vertical construction of the surge-absorbing diode
P
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!Electrical characteristic curves
800
625 BA12003BF
600
400
OUTPUT CURRENT : IOUT (mA)
1000
400
2ch
300
3ch
200
4ch
5ch
100
6ch
7ch
All series
400
350
10%
20%
300
Ta = 25˚C
200
110mA
Ta = 75˚C
100
64mA
200
0
0
25
50
75
100
125
150
10 20 30 40 50 60 70 80 90 100
500
The shaded range should
never be exceeded under
any circumstances
DC CURRENT GAIN : hFE
OUTPUT CURRENT : IOUT (mA)
100
Usage conditions range
80
100
IIN = 250µA
1000
Max. usage conditions
60
500
2000
300
40
Fig.9 Output conditions (II)
Ta = 25˚C
VCE = 2.0V
5000
350
200
20
DUTY CYCLE (%)
Fig.8 Output conditions (I)
Fig.7 Power dissipation vs. ambient
temperature
400
0
DUTY CYCLE : (%)
AMBIENT TEMPERATURE : Ta (˚C)
OUTPUT CURRENT: IOUT (mA)
When all circuits are on
All series
1250 Other than BA12003BF
1200
OUTPUT CURRENT : IO (mA)
POWER DISSIPATION : Pd (mW)
500
500
1400
500
200
400
300
Ta = −30˚C
200
Ta = 25˚C
100
Ta = 80˚C
10
20
30
40
50
100
10
20
50
100
200
OUTPUT CURRENT : IOUT (mA)
300
Ta = −30˚C
200
Ta = 25˚C
100
Ta = 80˚C
0.5
1.0
1.5
2.0
2.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.13 Output current vs. voltage
between collector and emitter
1.5
2.0
2.5
20
IIN = 500µA
IIN = 350µA
400
1.0
Fig.12 Output current vs. voltage
between collector and emitter
500
500
0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 DC current transfer ratio
vs. output current
Fig.10 Usage conditions range
per circuit
OUTPUT CURRENT : IOUT (mA)
1000
OUTPUT CURRET : IOUT (mA)
SUPPLY VOLTAGE: VCC (V)
0
10
500
0
0
INPUT CURRENT : IIN (mA)
0
400
300
Ta = −30˚C
200
Ta = 25˚C
100
15
Ta = −25˚C
Ta = 25˚C
Ta = 75˚C
10
5
Ta = 80˚C
0
0
0.5
1.0
1.5
2.0
2.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.14 Output current vs. voltage
between collector and emitter
0
10
20
30
40
INPUT VOLTAGE : VIN (V)
Fig.15 Input current vs. input
voltage (BA12003B / BF)
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
4
25
25
Ta = 75˚C
2
1
0
10
20
30
OUTPUT VOLTAGE : VCE OUT (V)
INPUT CURRENT : IIN (mA)
Ta = 25˚C
3
20
Ta = 75˚C
Ta = 25˚C
Ta = −25˚C
15
10
5
VOUT = 20V
RL = 68Ω
20
0.5
15
10
5
1
1.5
2
1
2.5
2
3
4
Fig.18 Output voltage vs. input
voltage (BA12004B)
Fig.17 Output voltage vs. input
voltage (BA12003B / BF)
!External dimensions (Units : mm)
BA12001B / BA12003B / BA12004B
BA12003BF
10.0 ± 0.2
19.4 ± 0.3
8
0.51Min.
6.2 ± 0.3
0.11
0.3 ± 0.1
0.5 ± 0.1
1.5 ± 0.1
3.2 ± 0.2 4.25 ± 0.3
7.62
2.54
9
1
8
1.27
0.4 ± 0.1
0.15 ± 0.1
1
16
4.4 ± 0.2
9
6.5 ± 0.3
16
0.3Min.
0° ~ 15°
0.15
DIP16
5
INPUT VOLTAGE : VIN (V), VI (V)
INPUT VOLTAGE : VIN (V)
INPUT VOLTAGE : VIN (V)
Fig.16 Input current vs. input
voltage (BA12004B)
Ta = 75˚C
Ta = 25˚C
Ta = −25˚C
0
0
40
OUTPUT VOLTAGE : VOUT (V), VCE (V)
VOUT = 20V
RL = 68Ω
Ta = −25˚C
SOP16
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan
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Appendix1-Rev1.0
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