Diodes CTA2N1P Complex transistor array Datasheet

CTA2N1P
COMPLEX TRANSISTOR ARRAY
Features
NEW PRODUCT
•
•
•
•
•
A
Combines MMBT4401 type transistor with BSS84 type
MOSFET
Small Surface Mount Package
PNP/N-Channel Complement Available: CTA2P1N
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
A03
H
Mechanical Data
•
•
•
•
•
•
•
•
•
B C
K
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: A03, See Page 6
Ordering Information: See Page 6
Weight: 0.006 grams (approximate)
M
J
D
CQ1
GQ2
L
SQ2
Q1
Q2
EQ1
Maximum Ratings, Total Device
F
SOT-363
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.80
2.20
0.10
⎯
0.90
1.00
0.25
0.40
0.10
0.25
8°
0°
α
All Dimensions in mm
Dim
A
B
C
D
F
H
J
K
L
M
BQ1
DQ2
@TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
(Note 1)
Thermal Resistance, Junction to Ambient
(Note 1)
Symbol
Value
Unit
Pd
150
mW
RθJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Maximum Ratings, Q1, MMBT4401 NPN Transistor Element
Characteristic
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
VEBO
6.0
V
IC
600
mA
Emitter-Base Voltage
Collector Current - Continuous
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element
Characteristic
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-50
V
Drain-Gate Voltage RGS ≤ 1.0MΩ
VDGR
-50
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Drain Current
Continuous
ID
-130
mA
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30295 Rev. 7 - 2
1 of 6
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CTA2N1P
© Diodes Incorporated
Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
60
⎯
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
⎯
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
⎯
V
IE = 100μA, IC = 0
ICEX
⎯
100
nA
VCE = 35V, VEB(OFF) = 0.4V
IBL
⎯
100
nA
VCE = 35V, VEB(OFF) = 0.4V
hFE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.40
0.75
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.75
⎯
0.95
1.2
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Ccb
⎯
6.5
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Ceb
⎯
30
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
15
kΩ
Voltage Feedback Ratio
hre
0.1
8.0
x 10
Small Signal Current Gain
hfe
40
500
⎯
Output Admittance
hoe
1.0
30
μS
fT
250
⎯
MHz
Delay Time
td
⎯
15
ns
Rise Time
tr
⎯
20
ns
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
30
ns
Collector Cutoff Current
NEW PRODUCT
@TA = 25°C unless otherwise specified
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 5)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
-4
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element
Characteristic
OFF CHARACTERISTICS (Note 5)
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
-50
⎯
⎯
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
⎯
⎯
⎯
⎯
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage
IGSS
⎯
⎯
±10
nA
VGS = ±20V, VDS = 0V
VGS(th)
-0.8
⎯
-2.0
V
VDS = VGS, ID = -1mA
RDS (ON)
⎯
⎯
10
Ω
VGS = -5V, ID = 0.100A
gFS
.05
⎯
⎯
S
VDS = -25V, ID = 0.1A
Input Capacitance
Ciss
⎯
⎯
45
pF
Output Capacitance
Coss
⎯
⎯
25
pF
Reverse Transfer Capacitance
Crss
⎯
⎯
12
pF
Turn-On Delay Time
tD(ON)
⎯
10
⎯
ns
Turn-Off Delay Time
tD(OFF)
⎯
18
⎯
ns
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = -25V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V
Notes: 5. Short duration pulse test used to minimize self-heating effect.
DS30295 Rev. 7 - 2
2 of 6
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CTA2N1P
© Diodes Incorporated
MMBT4401 Section
hFE, DC CURRENT GAIN
PD, POWER DISSIPATION (mW)
1,000
150
100
TA = 125°C
100
TA = +25°C
TA = -25°C
10
50
VCE = 1.0V
0
1
0
25
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs.
Ambient Temperature (Total Device)
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
0.1
200
30
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0
20
Cibo
CAPACITANCE (pF)
NEW PRODUCT
200
10
5.0
Cobo
1.0
0.1
DS30295 Rev. 7 - 2
1.0
10
REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance
1.8
IC = 30mA
IC = 1mA
IC = 10mA
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
50
0.001
0.1
1
10
IB, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
3 of 6
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0.01
100
CTA2N1P
© Diodes Incorporated
MMBT4401 Section
1.0
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
IC
= 10
IB
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
TA = -50°C
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.3
0.2
0
1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
1,000
fT, GAIN BANDWIDTH PRODUCT (MHz)
NEW PRODUCT
0.5
100
10
1
100
10
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
1
DS30295 Rev. 7 - 2
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© Diodes Incorporated
BSS84 Section
-1.0
500
-0.8
ID, DRAIN CURRENT (A)
ID, DRAIN-TO-SOURCE CURRENT (mA)
400
300
200
-0.6
-0.4
-0.2
100
-0.0
0
4
1
2
3
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Fig. 8 Drain-Source Current vs.
Drain-Source Voltage
0
0
5
-1
-2
-3
-4
-5
-6
-7
-8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Fig. 9 Drain Current vs. Gate Source Voltage
10
15
VGS = -10V
ID = -0.13A
9
8
RDS(ON), ON-RESISTANCE (Ω)
NEW PRODUCT
600
7
6
5
4
3
2
12
9
6
3
TA = 125° C
1
TA = 25° C
0
0
1
2
3
0
-50
5
4
VGS, GATE-TO-SOURCE VOLTAGE (V)
Fig. 10 On-Resistance vs. Gate-Source Voltage
75 100 125 150
-25
25
0
50
TJ, JUNCTION TEMPERATURE (°C)
Fig. 11 On-Resistance vs. Junction Temperature
25.0
20.0
VGS = -3.5V
VGS = -3V
VGS = -4.5V
15.0
VGS = -5V
VGS = -4V
10.0
5.0
VGS = -6V
VGS = -8V
VGS = -10V
0.0
-0.0
DS30295 Rev. 7 - 2
-0.2
-0.4
-0.6
-0.8
ID, DRAIN CURRENT (A)
Fig. 12, On-Resistance vs. Drain Current
1.0
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CTA2N1P
© Diodes Incorporated
Ordering Information
(Note 6)
Packaging
SOT-363
Device
CTA2N1P-7-F
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
A03
YM
NEW PRODUCT
Notes:
Shipping
3000/Tape & Reel
A03 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
2001
M
2002
N
2003
P
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30295 Rev. 7 - 2
6 of 6
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CTA2N1P
© Diodes Incorporated
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