STMicroelectronics BC847B Small signal npn transistor Datasheet

BC847
SMALL SIGNAL NPN TRANSISTORS
■
■
■
■
Type
Marking
BC847B
1F
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
LOW LEVEL GENERAL PURPOSE
PNP COMPLEMENT IS BC857
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CES
Collector-Emitter Voltage (V BE = 0)
50
V
V CBO
Collector-Base Voltage (IE = 0)
50
V
V CEO
Collector-Emitter Voltage (I B = 0)
45
V
V EBO
Emitter-Base Voltage (I C = 0)
6
V
Collector Current
0.1
A
I CM
Collector Peak Current
0.2
A
I BM
Base Peak Current
0.2
A
I EM
Emitter Peak Current
0.2
A
P t ot
Total Dissipation at T c = 25 C
300
mW
T stg
Storage Temperature
IC
Tj
o
Max. O perating Junction Temperature
October 1997
-65 to 150
o
C
150
o
C
1/4
BC847
THERMAL DATA
R t hj-amb •
R th j-SR •
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Substrate
Max
Max
o
420
330
o
C/W
C/W
• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CBO
Parameter
Collector Cut-off
Current (IE = 0)
Test Cond ition s
V CE = 30 V
V CE = 30 V
Min.
Typ .
T amb = 150 o C
Max.
Un it
15
5
nA
µA
V (BR)CES ∗ Collector-Emitter
Breakdown Voltage
(V BE = 0)
I C = 10 µA
50
V
V ( BR)CBO ∗ Collector-Base
Breakdown Voltage
(I E = 0)
I C = 10 µA
50
V
V ( BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 2 mA
45
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I C = 10 µA
6
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
IB = 0.5 mA
I B = 5 mA
0.09
0.2
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
IB = 0.5 mA
I B = 5 mA
0.75
0.9
V BE(on) ∗
Base-Emitter O n
Voltage
I C = 2 mA
I C = 10 mA
V CE = 5 V
VCE = 5 V
h FE∗
DC Current G ain
I C = 10 µA
I C = 2 mA
V CE = 5 V
V CE = 5 V
fT
200
V
V
V
V
0.63
0.7
0.7
0.77
150
290
450
300
V
V
Transition F requency
I C = 10 mA VCE = 5 V f = 100MHz
C CB
Collector Base
Capacitance
IE = 0
V CB = 10 V
f = 1 MHz
C EB
Collector Emitter
Capacitance
IC = 0
V EB = 0.5 V
f = 1 MHz
9
NF
Noise Figure
V CE = 5 V I C = 0.2 mA f = 1KHz
∆f = 200 Hz R G = 2 KΩ
2
10
dB
h i e∗
Input Impedance
V CE = 5 V
I C = 2 mA
f = 1KHz
4.5
8.5
KΩ
h re∗
Reverse Voltage Ratio
V CE = 5 V
I C = 2 mA
f = 1KHz
2
h fe ∗
Small Signal Current
Gain
V CE = 5 V
I C = 2 mA
f = 1KHz
330
h oe∗
Output Admittance
V CE = 5 V
I C = 2 mA
f = 1KHz
30
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
2/4
0.58
0.25
0.6
MHz
4.5
3.2
pF
pF
10 -4
60
µs
BC847
SOT-23 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
mils
MAX.
MIN.
TYP.
MAX.
A
0.85
1.1
33.4
43.3
B
0.65
0.95
25.6
37.4
C
1.20
1.4
47.2
55.1
D
2.80
3
110.2
118
E
0.95
1.05
37.4
41.3
F
1.9
2.05
74.8
80.7
G
2.1
2.5
82.6
98.4
H
0.38
0.48
14.9
18.8
L
0.3
0.6
11.8
23.6
M
0
0.1
0
3.9
N
0.3
0.65
11.8
25.6
O
0.09
0.17
3.5
6.7
0044616/B
3/4
BC847
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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