BYV37.BYV38 Vishay Telefunken Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications 94 9539 Fast ”soft recovery” rectifier Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g Test Conditions Peak forward surge current Average forward current Junction and storage temperature range Type BYV37 BYV38 tp=10ms, half sinewave Tamb=40°C Symbol VR VR IFSM Value 800 1000 50 Unit V V A IFAV Tj=Tstg 2 –65...+175 A °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode Capacitance Document Number 86045 Rev. 2, 24-Jun-98 Test Conditions IF=1A Tj=150°C IF=0.5A, IR=1A, iR=0.25A VR=4V, f=1MHz Type Symbol VF IR IR trr CD Min Typ 1.0 15 Max 1.1 5 150 300 Unit V mA mA ns pF www.vishay.de • FaxBack +1-408-970-5600 1 (4) BYV37.BYV38 Vishay Telefunken R thJA – Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25_C unless otherwise specified) 120 2.5 I FAV– Average Forward Current ( A ) 100 80 60 l VR = VR RM half sinewave l 40 20 2.0 1.0 0.5 TL=constant 0 0 5 10 15 20 25 0 60 80 100 120 140 160 180 10 VR = VRRM 450 Tj = 175°C RthJA= 400 350 45K/W 300 100K/W 250 160K/W 200 150 BYV38 100 50 BYV37 50 75 100 125 150 0.01 0.001 175 Tj – Junction Temperature ( °C ) 15774 Tj = 25°C 0.1 0.0001 0 25 1 IF – Forward Current ( A ) PR – Reverse Power Dissipation ( mW ) 40 Figure 4. Max. Average Forward Current vs. Ambient Temperature 500 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 15772 Figure 2. Max. Reverse Power Dissipation vs. Junction Temperature Figure 5. Max. Forward Current vs. Forward Voltage 1000 35 CD – Diode Capacitance ( pF ) VR = VRRM I R – Reverse Current ( mA ) 20 Tamb – Ambient Temperature ( °C ) 15773 Figure 1. Max. Thermal Resistance vs. Lead Length 100 10 1 25 15775 RthJA=100K/W PCB: d=25mm 0 30 l – Lead Length ( mm ) 94 9552 RthJA=45K/W l=10mm 1.5 50 75 100 125 150 Tj – Junction Temperature ( °C ) Figure 3. Max. Reverse Current vs. Junction Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (4) 25 20 15 10 5 0 0.1 175 15776 f=1MHz 30 1.0 10.0 100.0 VR – Reverse Voltage ( V ) Figure 6. Typ. Diode Capacitance vs. Reverse Voltage Document Number 86045 Rev. 2, 24-Jun-98 BYV37.BYV38 Vishay Telefunken Dimensions in mm ∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g 26 min. Document Number 86045 Rev. 2, 24-Jun-98 Cathode Identification 4.2 max. 94 9538 technical drawings according to DIN specifications ∅ 0.82 max. 26 min. www.vishay.de • FaxBack +1-408-970-5600 3 (4) BYV37.BYV38 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 86045 Rev. 2, 24-Jun-98