Silicon Junction FETs (Small Signal) 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 ■ Features 13.5±0.5 ● Low noies, high gain ● High gate to drain voltage VGDO +0.2 +0.2 0.45 –0.1 0.45 –0.1 Parameter Symbol 1.27 Ratings Unit Drain to Source voltage VDSX 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55 V Drain current ID ±30 mA Gate current IG 10 mA Allowable power dissipation PD 250 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1.27 1 2 3 2.54±0.15 2.3±0.2 ■ Absolute Maximum Ratings (Ta = 25°C) 1: Drain 2: Gate 3: Source JEDEC: TO-92 EIAJ: SC-43 TO-92 Type Package ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol IDSS* VDS = 10V, VGS = 0 Gate to Source leakage current IGSS VGS = −30V, VDS = 0 Gate to Drain voltage VGDC IG = −100µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 10µA Mutual conductance gm VDS = 10V, VGS = 0, f = 1kHz Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure * Conditions Drain to Source cut-off current NF VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz min typ 1 max Unit 20 mA −10 nA −55 −80 2.5 7.5 mS 6.5 pF 1.9 pF 0.5 dB V −5 V IDSS rank classification Runk P Q R S IDSS (mA) 1 to 3 2 to 6.5 5 to 12 10 to 20 Note) The part number in the parenthesis shows conventional part number. 247 Silicon Junction FETs (Small Signal) P D Ta I D V DS 320 I D V DS 5 10 Ta=25˚C Ta=25˚C 280 200 160 120 80 8 3 VGS=0 – 0.2V – 0.4V 2 – 0.6V 1 VGS=0V – 0.2V 6 – 0.4V 4 – 0.6V – 0.8V 2 – 0.8V – 1.0V 40 –1.0V 0 – 1.2V 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 0.1 0.2 0.3 0.4 0.5 0.6 0 Drain to source voltage VDS (V) I D V GS Ta=–25˚C 25˚C 4 75˚C 10 12 gm ID VDS=10V Ta=25˚C Mutual conductance gm (mS) Mutual conductance gm (mS) 10 8 VDS=10V Ta=25˚C VDS=10V 12 6 12 14 6 4 Drain to source voltage VDS (V) 12 8 2 g m VGS 16 Drain current ID (mA) Drain current ID (mA) 4 240 Drain current ID (mA) Allowable power dissipation PD (mW) 2SK0301 10 8 6 4 2 10 8 IDSS=7.5mA 6 4 2 2 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 0 –2.0 –1.2 Gate to source voltage VGS (V) 0 –1.6 12 10 8 6 4 2 0 6 8 10 12 Drain to source voltage VDS (V) 248 Output capacitance (Common source) Coss (pF) Input capacitance (Common source) Ciss (pF) VGS=0 Ta=25˚C 4 – 0.4 0 0 2 VGS=0 Ta=25˚C 7 6 5 4 3 2 1 0 2 4 6 8 6 8 10 C rss V DS 8 0 4 Drain current ID (mA) C oss V DS 14 2 – 0.8 Gate to source voltage VGS (V) C i s s V DS 16 0 –1.2 10 12 Drain to source voltage VDS (V) Reverse transfer capacitance (Common source) Crss (pF) 0 8 VGS=0 Ta=25˚C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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