Darlington Phototransistors PNA2602 Darlington Phototransistor Unit : mm For optical control systems 4.2±0.3 2.3 1.9 4.5±0.3 4.8±0.3 2.4 2.4 Not soldered ø3.5±0.2 Features 2.8 1.8 1.0 Darlington output, high sensitivity 12.8 min. 10.0 min. Easy to combine light emission and photodetection on same printed circuit board Small size, thin side-view type package 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 1.2 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V Collector current IC 30 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +80 ˚C Storage temperature Tstg –30 to +100 ˚C 1 2 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage ICE(L) Conditions VCE = 10V, L = 2 lx*1 max Unit 0.1 0.5 µA 1 mA nm Measured from the optical axis to the half power point 35 deg. VCC = 10V, ICE(L) = 5mA, RL = 100Ω 100 µs VCE = 10V θ tr, tf*2 ICE(L) = 1mA, L = 100 0.2 typ 800 λP VCE(sat) min VCE = 10V lx*1 0.7 1.5 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ,, ,, 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 PNA2602 Darlington Phototransistors PC — Ta ICE(L) — VCE 60 40 20 0 20 40 60 80 L = 30 lx 16 20 lx 10 lx 8 5 lx 0 100 Ta (˚C ) 0 4 8 12 16 20 Collector to emitter voltage 1 10 –1 24 Spectral sensitivity characteristics Ta = 25˚C Dark current S (%) 80 1 60 Relative sensitivity ICEO (µA) 10 10 –1 40 10 –2 0 40 Ambient temperature 80 20 10 –3 – 20 120 Ta (˚C ) 0 10˚ 20 40 60 Ambient temperature 80 0 200 100 400 20˚ 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tr — ICE(L) Directivity characteristics 0˚ 10 3 L (lx) 100 VCE = 10V 10 –1 10 2 10 Illuminance ICEO — Ta 1 1 VCE (V) 10 2 VCE = 10V T = 2856K 10 –2 – 40 10 2 10 2 lx 1 lx ICE(L) — Ta 10 ICE(L) (mA) 80 PC = 100mW 24 Collector photo current ICE(L) (mA) 100 Ambient temperature ICE(L) (mA) VCE = 10V Ta = 25˚C T = 2856K Ta = 25˚C T = 2856K 0 – 20 Collector photo current ICE(L) — L 10 3 32 Collector photo current Collector power dissipation PC (mW) 120 tf — ICE(L) 100 40 30 20 50˚ 60˚ 70˚ 10 3 RL = 1kΩ 500Ω Sig. OUT RL tr 90% 10% td tf 10 3 RL = 1kΩ 500Ω 100Ω 10 2 10 2 100Ω 80˚ 90˚ 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 2 tf Sig. OUT 50Ω , tr td VCC tf (µs) 40˚ Sig.IN 90% 10% Fall time 50 ,, , 60 Sig. OUT RL tr (µs) 70 VCC Sig. OUT 50Ω 30˚ Rise time 80 Relative sensitivity S (%) Sig.IN 90 1 10 ICE(L) (mA) 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 1 10 ICE(L) (mA)