Composite Transistors XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD814 × 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 0.12 – 0.02 0.2 ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 ● 0.65 ■ Features 0.65 0.425 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 150 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 150 V VEBO 5 V IC 50 mA Peak collector current ICP 100 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 4O Internal Connection 1 Parameter *1 Tr1 5 2 3 ■ Electrical Characteristics 0.2±0.1 Tr2 4 (Ta=25˚C) Symbol Conditions min Collector to emitter voltage VCEO IC = 100µA, IB = 0 150 Emitter to base voltage VEBO IE = 10µA, IC = 0 5 Collector cutoff current ICBO VCB = 100V, IE = 0 typ max Unit V V 1 µA Forward current transfer ratio hFE VCE = 5V, IC = 10mA 90 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 5V, IC = 10mA 0.5 450 Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2.3 pF 0.99 1 V Ratio between 2 elements 1 Composite Transistors XP1507 PT — Ta IC — VCE IC — VBE 120 250 120 100 150 100 50 60 0.6mA 0.4mA 40 0.2mA 20 20 40 60 2 VCE(sat) — IC 3 1 Ta=75˚C 0.1 –25˚C 0.03 1 0.3 3 10 30 100 Collector current IC (mA) Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25˚C 4 3 2 1 0 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) 2 6 8 10 12 0 0.4 0.8 1.2 400 Ta=75˚C 25˚C 200 –25˚C 100 0 0.1 0.3 1 3 2.0 fT — I E 500 300 1.6 Base to emitter voltage VBE (V) 200 10 Collector current IC Cob — VCB 1 40 VCB=10V Ta=25˚C VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 0.01 0.1 4 600 IC/IB=10 25˚C 60 hFE — IC 30 0.3 80 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 100 –25˚C 0 0 80 100 120 140 160 Transition frequency fT (MHz) 0 Ta=75˚C 20 0 0 25˚C 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 80 VCE=10V Collector current IC (mA) 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 30 (mA) 100 160 120 80 40 0 –1 –2 –3 –5 –10 –20 –30 –50 Emitter current IE (mA) –100