TI1 CSD16409Q3 N-channel nexfetâ ¢ power mosfet Datasheet

CSD16409Q3
www.ti.com
SLPS204A – AUGUST 2009 – REVISED MAY 2010
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16409Q3
FEATURES
1
•
•
•
•
•
•
•
2
PRODUCT SUMMARY
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3mm x 3.3mm Plastic Package
VDS
Drain to Source Voltage
25
V
Qg
Gate Charge Total (4.5V)
4
nC
Qgd
Gate Charge Gate to Drain
RDS(on)
Drain to Source On Resistance
Vth
Threshold Voltage
•
nC
9.5
mΩ
VGS = 10V
6.2
mΩ
2
V
ORDERING INFORMATION
Device
Package
Media
CSD16409Q3
SON 3.3 × 3.3
Plastic Package
13-inch
reel
APPLICATIONS
•
1
VGS = 4.5V
Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control FET Applications
DESCRIPTION
Qty
Ship
2500
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain to Source Voltage
25
V
VGS
Gate to Source Voltage
+16 / –12
V
Continuous Drain Current, TC = 25°C
60
A
Continuous Drain Current(1)
15
A
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
ID
Top View
IDM
Pulsed Drain Current, TA = 25°C(2)
90
A
PD
Power Dissipation(1)
2.6
W
S
1
8
D
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
S
2
7
D
EAS
Avalanche Energy, single pulse
ID = 38A, L = 0.1mH, RG = 25Ω
72
mJ
S
3
6
D
(1) RqJA = 47°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300ms, duty cycle ≤2%
G
4
D
5
D
P0095-01
RDS(ON) vs VGS
Gate Charge
12
ID = 17A
VDS = 12.5V
ID = 17A
18
10
16
14
VG − Gate Voltage − V
RDS(on) − On-State Resistance − mΩ
20
TC = 125°C
12
10
8
6
4
TC = 25°C
8
6
4
2
2
0
0
2
4
6
8
10
VGS − Gate to Source Voltage − V
12
G006
0
2
4
6
8
10
Qg − Gate Charge − nC
G003
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated
CSD16409Q3
SLPS204A – AUGUST 2009 – REVISED MAY 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +16/-12V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
25
V
1
mA
100
nA
2
2.3
V
VGS = 4.5V, ID = 17A
9.5
12.4
mΩ
VGS = 10V, ID = 17A
6.2
8.2
mΩ
VDS = 15V, ID = 17A
38
1.7
S
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
600
800
pF
480
635
CRSS
pF
Reverse Transfer Capacitance
40
55
pF
Rg
Series Gate Resistance
0.9
1.8
Ω
Qg
Gate Charge Total (4.5V)
4
5.6
nC
Qgd
Gate Charge Gate to Drain
Qgs
Gate Charge Gate to Source
Qg(th)
Gate Charge at Vth
QOSS
Output Charge
td(on)
Turn On Delay Time
tr
Rise Time
td(off)
Turn Off Delay Time
tf
Fall Time
VGS = 0V, VDS = 12.5V , f = 1MHz
VDS = 12.5V, ID = 17A
VDS = 12.9V, VGS = 0V
VDS = 12.5V, VGS = 4.5V,
ID = 17A, RG = 2Ω
1
nC
2.1
nC
1.1
nC
9.1
nC
6.5
ns
10.6
ns
6.3
ns
3.4
ns
Diode Characteristics
VSD
Diode Forward Voltage
IS = 17A, VGS = 0V
0.85
Qrr
Reverse Recovery Charge
VDD = 12.9V, IF = 17A, di/dt = 300A/ms
13.8
1
nC
V
trr
Reverse Recovery Time
VDD = 12.9V, IF = 17A, di/dt = 300A/ms
17.5
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
R qJC
Thermal Resistance Junction to Case (1)
R qJA
Thermal Resistance Junction to Ambient (1)
(1)
(2)
2
(2)
MIN
TYP
MAX
UNIT
3.5
°C/W
59
°C/W
RqJC is determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in 0.06 inch thick FR4 board. RqJC is
specified by design while RqJA is determined by the user’s board design.
Device mounted on FR4 Material with 1 inch2 of 2 oz. Cu.
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD16409Q3
CSD16409Q3
www.ti.com
SLPS204A – AUGUST 2009 – REVISED MAY 2010
GATE
GATE
Source
Source
Max RqJA = 157°C/W
when mounted on
minimum pad area of 2
oz. Cu.
Max RqJA = 59°C/W
when mounted on 1
inch2 of 2 oz. Cu.
DRAIN
DRAIN
M0161-02
M0161-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA – Normalized Thermal Impedance
10
1
0.5
0.3
0.1
0.01
Duty Cycle = t1/t2
0.1
0.05
P
0.02
0.01
Single Pulse
0.001
0.001
t1
t2
RqJA = 126°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
0.01
0.1
1
10
100
1k
tp – Pulse Duration – s
G012
Figure 1. Transient Thermal Impedance
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CSD16409Q3
SLPS204A – AUGUST 2009 – REVISED MAY 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
50
50
VDS = 5V
45
40
VGS = 10V
35
VGS = 4.5V
ID − Drain Current − A
ID − Drain Current − A
40
VGS = 3.5V
30
VGS = 4V
25
20
15
VGS = 3V
10
TC = 125°C
30
TC = 25°C
20
TC = −55°C
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2.0
3.0
VDS − Drain to Source Voltage − V
2.5
4.5
G002
1.6
ID = 17A
VDS = 12.5V
f = 1MHz
VGS = 0V
1.4
C − Capacitance − nF
10
VG − Gate Voltage − V
4.0
Figure 3. Transfer Characteristics
12
8
6
4
2
1.2
COSS = CDS + CGD
1.0
CISS = CGD + CGS
0.8
0.6
0.4
CRSS = CGD
0.2
0
0.0
0
2
4
6
8
10
Qg − Gate Charge − nC
0
5
15
20
25
G004
Figure 5. Capacitance
2.5
RDS(on) − On-State Resistance − mΩ
20
ID = 250µA
2.0
1.5
1.0
0.5
0.0
−75
10
VDS − Drain to Source Voltage − V
G003
Figure 4. Gate Charge
VGS(th) − Threshold Voltage − V
3.5
VGS − Gate to Source Voltage − V
G001
Figure 2. Saturation Characteristics
ID = 17A
18
16
14
TC = 125°C
12
10
8
6
4
TC = 25°C
2
0
−25
25
75
125
175
TC − Case Temperature − °C
2
4
6
8
10
VGS − Gate to Source Voltage − V
G005
Figure 6. Threshold Voltage vs. Temperature
4
3.0
12
G006
Figure 7. On Resistance vs. Gate Voltage
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD16409Q3
CSD16409Q3
www.ti.com
SLPS204A – AUGUST 2009 – REVISED MAY 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
100
1.6
ID = 17A
VGS = 10V
ISD − Source to Drain Current − A
Normalized On-State Resistance
1.8
1.4
1.2
1.0
0.8
0.6
0.4
−75
10
1
TC = 125°C
0.1
TC = 25°C
0.01
0.001
0.0001
−25
25
75
125
175
TC − Case Temperature − °C
0.0
0.8
1.0
1.2
G008
100
I(AV) − Peak Avalanche Current − A
ID − Drain Current − A
0.6
Figure 9. Typical Diode Forward Voltage
1k
100
1ms
10
10ms
Area Limited
by RDS(on)
100ms
1s
0.1
Single Pulse
o
RqJA = 126 C/W (min Cu)
0.01
0.01
0.4
VSD − Source to Drain Voltage − V
G007
Figure 8. Normalized On Resistance vs. Temperature
1
0.2
0.1
DC
1
10
10
TC = 125°C
1
0.01
100
VDS − Drain To Source Voltage − V
TC = 25°C
0.1
1
10
t(AV) − Time in Avalanche − ms
G009
Figure 10. Maximum Safe Operating Area
100
G010
Figure 11. Single Pulse Unclamped Inductive Switching
70
ID − Drain Current − A
60
50
40
30
20
10
0
−50
−25
0
25
50
75
100
125
TC − Case Temperature − °C
150
175
G011
Figure 12. Maximum Drain Current vs. Temperature
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Product Folder Link(s): CSD16409Q3
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CSD16409Q3
SLPS204A – AUGUST 2009 – REVISED MAY 2010
www.ti.com
MECHANICAL DATA
Q3 Package Dimensions
D2
D
H
L
1
2
7
3
6
4
5
5
4
3
b
E2
E
6
e
E
7
2
8
8
1
q
L1
Top View
A1
Bottom View
A
Side View
c
D
Front View
M0142-01
DIM
MILLIMETERS
NOM
MAX
MIN
NOM
MAX
A
0.950
1.000
1.100
0.037
0.039
0.043
A1
0.000
0.000
0.050
0.000
0.000
0.002
b
0.280
0.340
0.400
0.011
0.013
0.016
c
0.150
0.200
0.250
0.006
0.008
0.010
D
3.200
3.300
3.400
0.126
0.130
0.134
D1
–
–
–
–
–
–
D2
1.650
1.750
1.800
0.065
0.069
0.071
E
3.200
3.300
3.400
0.126
0.130
0.134
E1
–
–
–
–
–
–
E2
2.350
2.450
2.550
0.093
0.096
0.100
e
6
INCHES
MIN
0.650 TYP
0.026
H
0.35
0.450
0.550
0.014
0.018
0.022
L
0.35
0.450
0.550
0.014
0.018
0.022
L1
–
–
–
–
–
–
q
–
–
–
–
–
–
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Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): CSD16409Q3
CSD16409Q3
www.ti.com
SLPS204A – AUGUST 2009 – REVISED MAY 2010
2.31
1
8
8
1
0.65 Typ.
2.45
5
4
5
3.50
0.56
0.41
4
0.50 Typ.
Recommended PCB Land Pattern
0.63
M0143-01
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
1.75 ±0.10
Q3 Tape and Reel Information
4.00 ±0.10 (See Note 1)
2.00 ±0.05
Ø 1.50
+0.10
–0.00
3.60
1.30
3.60
5.50 ±0.05
12.00
+0.30
–0.10
8.00 ±0.10
M0144-01
Notes:
1. 10 sprocket hole pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm
3. Material:black static dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. Thickness: 0.30 ±0.05mm
6. MSL1 260°C (IR and Convection) PbF Reflow Compatible
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CSD16409Q3
SLPS204A – AUGUST 2009 – REVISED MAY 2010
www.ti.com
REVISION HISTORY
Changes from Original (August 2009) to Revision A
•
8
Page
Deleted the Package Marking Information section ............................................................................................................... 7
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PACKAGE MATERIALS INFORMATION
www.ti.com
23-May-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
CSD16409Q3
Package Package Pins
Type Drawing
SON
DQG
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.8
Pack Materials-Page 1
3.6
B0
(mm)
K0
(mm)
P1
(mm)
3.6
1.2
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-May-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD16409Q3
SON
DQG
8
2500
335.0
335.0
32.0
Pack Materials-Page 2
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