MA111 Zener Diodes Composite Elements MAZE062D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit 2.1±0.1 type package (3-pin) ● Two anode-common element wiring 0.3–0 3 2 +0.1 joint capacity zener diode (VZ= 6.2V) 1 0.9±0.1 ● Low 0.425 0.15–0.05 ● S-Mini 2.0±0.2 1.3±0.1 0.65 0.65 ■ Features 1.25±0.1 +0.1 0.425 1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 Flat S-Mini Type Package (3-pin) ■ Absolute Maximum Ratings (Ta= 25˚C) Symbol Rating Instanious forward current IFRM 200 mA Total power dissipation Ptot* 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg – 55 to + 150 ˚C Parameter Unit ■ Internal Connection 1 3 * With a printed-circuit board 2 1 ■ Electrical Characteristics (Ta= 25˚C)* Parameter Condition Symbol min IF=10mA typ max Unit 0.9 1.0 V Forward voltage VF Zener voltage VZ*2 IZ= 5mA 6.5 V RZK IZ= 0.5mA 100 Ω RZ IZ= 5mA 30 Ω Reverse current IR VR= 5.5V 3 µA Terminal capacitance Ct VR= 0V, f=1MHz Operating resistance 5.9 Note 1. Rated input/output frequency : 5MHz 2. Test method : Depend on JIS C7031 testing 3. Electrostatic discharge is ±15kV Test method : IEC-801(C=150pF, R=330Ω, Contact discharge : 10 times) Test unit : ESS-200AX 4. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application ■ Marking 6.2C 8 pF