BCW30 SMALL SIGNAL PNP TRANSISTORS ■ ■ ■ Type Marking BCW 30 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) Parameter -32 V V CEO Collector-Emitter Voltage (I B = 0) -32 V V CBO Collector-Base Voltage (IE = 0) -32 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -0.1 A I CM Collector Peak Current -0.2 A P t ot Total Dissipation at T c = 25 C 300 mW T stg St orage Temperature IC Tj o Max. Operating Junction Temperature October 1997 -65 to 150 o C 150 o C 1/4 BCW30 THERMAL DATA R t hj- amb • Thermal Resistance Junction-Ambient Max o 420 C/W • Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = -30 V V CB = -30 V Min. Typ . o T j = 100 C Max. Un it -100 -10 nA µA V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) I C = -10 µA -32 V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = -2 mA -32 V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I B = 0) I C = -10 µA -32 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I C = -10 µA -5 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = -10 mA I C = -50 mA IB = -0.5 mA IB = -2.5 mA -0.18 V V V BE(s at)∗ Collector-Base Saturation Voltage I C = -10 mA I C = -50 mA IB = -0.5 mA IB = -2.5 mA -0.72 -0.81 V V V BE(on) ∗ Base-Emitter O n Voltage I C = -2 mA VCE = -5 V -0.6 h FE∗ DC Current G ain I C = -10 µA I C = -2 mA V CE = -5 V V CE = -5 V 215 fT I C = -10 mA V CE = -5 V f = 100 MHz C CB Collector Base Capacitance IE = 0 NF Noise Figure I C = -0.2mA ∆f = 200 Hz VCB = -10 V f = 1MHz V CE = -5 V R g = 2KΩ -0.75 V 150 Transition F requency ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 -0.3 f = 1KHz 500 150 MHz 7 dB 10 dB BCW30 SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. mils MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B 3/4 BCW30 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4