Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Basic Part Number 0.4±0.2 1.50+0.25 –0.05 5 2.8+0.2 –0.3 4 ■ Features 0.16+0.10 –0.06 5˚ For low-noise amplification (2 GHz band) 1.1+0.2 –0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 2 V Collector current IC 65 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ • 2SC3904 × 2 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 9Y Internal Connection 4 5 Tr1 Tr2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Typ 1 Symbol Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 1 µA hFE VCE = 8 V, IC = 20 mA 50 120 300 hFE(Small VCE = 8 V, IC = 20 mA 0.50 0.99 fT VCE = 8 V, IC = 20 mA, f = 200 MHz 7.0 8.5 GHz Noise figure NF VCE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 3.0 dB Collector output capacitance (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 0.6 1.0 pF Forward current transfer ratio Min 2 Parameter hFE ratio * Conditions 6 Max Unit /Large) Transition frequency Forward transfer gain Maximum unilateral power gain S21e2 VCE = 8 V, IC = 20 mA, f = 1.5 GHz GUM VCE = 8 V, IC = 20 mA, f = 1.5 GHz 7 9 dB 10 dB Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00112BED 1 XN06543 PC Ta IC VCE Ta = 25°C 120 80 40 20 200 µA 15 150 µA 10 100 µA 5 50 µA 0 0 80 120 160 0 2 Ta = 75°C 25°C −25°C 10−2 1 10 Ta = 75°C 25°C 80 −25°C 40 1 12 10 0.8 0.6 0.4 0.2 10 100 1.0 1.2 8 6 4 2 1 10 100 Collector current IC (mA) NF IC 8 6 4 6 VCE = 8 V f = 1.5 GHz Ta = 25°C 5 4 3 2 1 2 0 0.1 0.8 10 0 100 VCE = 8 V f = 1.5 GHz Ta = 25°C 10 0.6 VCE = 8 V f = 1.5 GHz Ta = 25°C Collector current IC (mA) Maximum unilateral power gain GUM (dB) Collector output capacitance C (pF) (Common base, input open circuited) ob 0.4 fT I C GUM IC Collector-base voltage VCB (V) 2 0.2 12 120 0 0.1 100 IE = 0 f = 1 MHz Ta = 25°C 1 0 Base-emitter voltage VBE (V) VCE = 8 V 160 Cob VCB 1.0 0 12 200 Collector current IC (mA) 1.2 10 −25°C 40 hFE IC 1 10−3 0.1 8 240 IC / IB = 10 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 10−1 6 Ta = 75°C 60 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 10 4 Transition frequency fT (GHz) 40 25°C 80 20 Noise figure NF (dB) 0 VCE = 8 V 100 Collector current IC (mA) Collector current IC (mA) Total power dissipation PT (mW) 160 120 IB = 250 µA 25 200 0 IC VBE 30 240 1 10 Collector current IC (mA) SJJ00112BED 100 0 0.1 1 10 Collector current IC (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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