Powerex Power CM600DU-24F Dual igbtmod 600 amperes/1200 volt Datasheet

CM600DU-24F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
F-Series Module
600 Amperes/1200 Volts
A
TC MEASURED POINT
B
F
G
CL
T - (4 TYP.)
M
P
C1
C E
E2
C2E1
E2
Z
X
CL
Q
E1
G1
AA
LABEL
R
G2
N
Y
P
W(4 PLACES)
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal
management.
S - (3 PLACES)
L
K
J
H
V
D
U
G2
E2
RTC
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
C2E1
C1
E2
RTC
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
A
5.51
B
5.12
Millimeters
140.0
P
0.57
14.5
130.0
Q
1.57
40.0
130.0
65.0
C
5.12
R
2.56
D
1.38 +0/-0.02
35.0 +0/-0.5
S
M8
M8
E
4.33±0.01
110.0±0.25
T
0.26 Dia.
6.5 Dia.
F
4.33±0.01
110.0±0.25
U
0.32
8.0
G
0.39
10.0
V
H
0.45
11.5
W
M4
0.97 +0.04/-0.02 24.5 +1.0/-0.5
M4
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600DU-24F is a
1200V (VCES), 600 Ampere Dual
IGBTMOD™ Power Module.
J
0.54
13.8
X
0.59
15.0
K
1.72
43.8
Y
0.35
9.0
L
1.42
36.0
Z
1.02
26.0
Type
Current Rating
Amperes
VCES
Volts (x 50)
M
0.39
10.0
AA
0.79
20.0
CM
600
24
N
0.80
20.4
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-24F
Dual IGBTMOD™ F-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM600DU-24F
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
600
Amperes
ICM
1200*
Amperes
Collector Current (Tc = 25°C)
Peak Collector Current
Emitter Current** (Tc = 25°C)
IE
600
Amperes
Peak Emitter Current**
IEM
1200*
Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C)
Pc
1540
Watts
Mounting Torque, M8 Main Terminal
–
95
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
G(E) Terminal, M4
–
15
in-lb
–
1200
Grams
Viso
2500
Volts
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Symbol
Test Conditions
Min.
Typ.
Max.
ICES
VCE = VCES, VGE = 0V
–
–
2
80
IGES
VGE = VGES, VCE = 0V
–
–
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
5.0
6
7.0
Collector-Emitter Saturation Voltage
VCE(sat)
mA
µA
Volts
IC = 600A, VGE = 15V, Tj = 25°C
–
1.95
2.55
Volts
IC = 600A, VGE = 15V, Tj = 125°C
–
2.05
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 600A, VGE = 15V
–
6600
Emitter-Collector Voltage**
VEC
IE = 600A, VGE = 0V
–
–
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Units
–
3.35
nC
Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-24F
Dual IGBTMOD™ F-Series Module
600 Amperes/1200 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Test Conditions
VCE = 10V, VGE = 0V
Min.
Typ.
–
–
230
Max.
Units
nf
–
–
10
nf
–
–
6
nf
–
–
450
ns
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 600A,
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
–
–
200
ns
Switch
Turn-off Delay Time
td(off)
RG = 1.0⍀,
–
–
800
ns
Times
Fall Time
tf
Inductive Load
–
–
300
ns
Diode Reverse Recovery Time*
trr
Switching Operation
–
–
500
ns
Diode Reverse Recovery Charge*
Qrr
IE = 600A
–
43.2
–
µC
Max.
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
Test Conditions
Min.
Typ.
Units
Rth(j-c)Q
Per IGBT 1/2 Module, Tc Reference
–
–
0.081
°C/W
–
–
0.11
°C/W
–
–
0.032** °C/W
–
0.010
1.0
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
Rth(j-c)R
Per FWDi 1/2 Module, Tc Reference
Point per Outline Drawing
Thermal Resistance
Rth(j-c')Q
Per IGBT 1/2 Module
Tc Reference Point Under Chips
Contact Thermal Resistance
External Gate Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
RG
–
°C/W
52
Ω
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**If you use this value, Rth(f-a) should be measured just under the chips.
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-24F
Dual IGBTMOD™ F-Series Module
600 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
9.5
9
800
8.5
400
8
5
VGE = 15V
Tj = 25°C
Tj = 125°C
2.5
2.0
1.5
1.0
0.5
0
0
0
1
2
3
Tj = 25°C
4
3
IC = 1200A
2
IC = 240A
IC = 600A
1
0
0
4
300
600
900
1200
0
6
8
10
12 14
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
102
Cies
103
SWITCHING TIME, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
103
102
101
td(off)
tf
td(on)
102
tr
VCC = 600V
VGE = ±15V
RG = 1.0 Ω
Tj = 25°C
Inductive Load
101
Coes
0
1.0
1.5
2.0
2.5
3.0 3.5
100
101
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, VGE
trr
Irr
102
101
101
102
102
EMITTER CURRENT, IE, (AMPERES)
101
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
103
VCC = 600V
VGE = ±15V
RG = 1.0 Ω
Tj = 25°C
Inductive Load
IC = 600A
16
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
0.5
VCC = 400V
VCC = 600V
12
8
4
102
103
COLLECTOR CURRENT, IC, (AMPERES)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
100
10-1
101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10-3
101
100
10-2
10-1
100
2000
4000
6000
8000
GATE CHARGE, QG, (nC)
10000
101
Per Unit Base
Rth(j-c) = 0.081°C/W (IGBT)
Rth(j-c) = 0.11 °C/W (FWDi)
Single Pulse
TC = 25°C
10-1
10-1
10-2
10-2
10-3
0
0
20
104
VGE = 0V
Cres
4
18
COLLECTOR-CURRENT, IC, (AMPERES)
Tj = 25°C
103
16
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
104
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
3.0
15
11
10
Tj = 25oC
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
1200
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10-5
TIME, (s)
10-4
10-3
10-3
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