PANASONIC DA2S101

This product complies with the RoHS Directive (EU 2002/95/EC).
DA2S101
Silicon epitaxial planar type
For high speed switching circuits
DA2J101 in SSMini2 type package
 Features

Package
 Small reverse current IR
 Short reverse recovery time trr
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package

Code
SSMini2-F5-B

Pin Name
1: Cathode
2: Anode
 Packaging

Marking Symbol: A1
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
VR
80
V
VRM
80
V
IF
100
mA
Peak forward current
IFM
225
mA
Non-repetitive peak forward surge current *
IFSM
500
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Reverse voltage
Maximum peak reverse voltage
Forward current
Note) *: 1 t = 1 s
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
0.92
1.20
V
Forward voltage
VF
IF = 100 mA
Reverse voltage
VR
IR = 100 mA
Reverse current
IR
VR = 80 V
100
nA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
1.2
pF
Reverse recovery time *
trr
IF = 10 mA, VR = 6 V, Irr = 0.25 × IR
3
ns
80
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *: trr measurement circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: November 2010
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Ver. DED
Output Pulse
t
IF
trr
t
Irr = 0.25 × IR
IF = 10 mA
VR = 6 V
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2S101
IF  VF
IR  VR
25°C
10−6
1
25°C
10−7
10−1
10−8
−30°C
10−2
0
0.4
Terminal capacitance Ct (pF)
Reverse current IR (mA)
Forward current IF (mA)
10−5
Ta = 85°C
10
Ta = 25°C
Ta = 85°C
10−4
102
0.8
−30°C
10−9
1.2
Forward voltage VF (V)
2
Ct  VR
1.2
10−3
103
10−3
DA2S101_Ct-VR
DA2S101_ IR-VR
DA2S101_ IF-VF
10−10
0
20
40
60
80
Reverse voltage VR (V)
Ver. DED
100
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
Reverse voltage VR (V)
40
This product complies with the RoHS Directive (EU 2002/95/EC).
DA2S101
SSMini2-F5-B
Unit: mm
+0.05
0.80 −0.03
+0.05
0.13 −0.02
1.60 ±0.05
1.20 −0.03
+0.05
2
5°
0 to 0.05
1
0.20 ±0.05
0.30 ±0.05
(0.15)
0.60 −0.03
+0.05
5°
Ver. DED
3
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semiconductors described in this book
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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20100202