PANASONIC XN4482

Composite Transistors
XN4482
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
+0.2
2.8 –0.3
+0.25
3
Tr1
Tr2
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–60
V
Collector to emitter voltage
VCEO
–50
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–100
mA
Peak collector current
ICP
–200
mA
Collector to base voltage
VCBO
–60
V
Collector to emitter voltage
VCEO
–50
V
Emitter to base voltage
VEBO
–5
V
Collector current
IC
–500
mA
Peak collector current
ICP
–1
A
Total power dissipation
PT
300
mW
Overall Junction temperature
Storage temperature
+0.1
+0.1
0 to 0.05
0.4±0.2
■ Absolute Maximum Ratings
Tj
150
˚C
Tstg
–55 to +150
˚C
1.45±0.1
+0.1
4
0.1 to 0.3
Parameter
0.5 –0.05
0.95
2
0.16–0.06
2SB709+2SB710
5
0.95
+0.2
2.9 –0.05
1.1–0.1
●
+0.2
■ Basic Part Number of Element
1.9±0.1
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
0.8
●
0.65±0.15
1
6
■ Features
●
1.5 –0.05
0.3 –0.05
0.65±0.15
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: ON
Internal Connection
6
Tr1
2
5
4
1
Tr2
3
1
Composite Transistors
XN4482
■ Electrical Characteristics
●
(Ta=25˚C)
Tr1
Parameter
Symbol
Collector to base voltage
Conditions
min
typ
max
Unit
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
ICBO
VCB = –20V, IE = 0
– 0.1
µA
ICEO
VCE = –10V, IB = 0
–100
µA
Forward current transfer ratio
hFE
VCE = –10V, IC = –2mA
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = –10mA
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
2.7
pF
Collector cutoff current
●
160
460
– 0.3
– 0.5
V
Tr2
Parameter
Symbol
Conditions
min
typ
max
Unit
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–5
V
Collector cutoff current
ICBO
VCB = –20V, IE = 0
hFE1
VCE = –10V, IC = –150mA*
85
40
Collector to base voltage
Forward current transfer ratio
– 0.1
µA
340
hFE2
VCE = –10V, IC = –500mA*
Collector to emitter saturation voltage
VCE(sat)
IC = –300mA, IB = –30mA*
– 0.35
– 0.6
Base to emitter saturation voltage
VBE(sat)
IC = –300mA, IB = –30mA*
–1.1
–1.5
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
200
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
5
V
V
MHz
15
pF
* Pulse measurement
Common characteristics chart
PT — Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
2
Composite Transistors
XN4482
Characteristics charts of Tr1
IC — VCE
IC — I B
–60
Ta=25˚C
–40
–200µA
–150µA
–20
–100µA
–10
Base current IB (µA)
–250µA
–30
–40
–30
–20
–250
–200
–150
0
0
–2 –4 –6 –8 –10 –12 –14 –16 –18
0
Collector to emitter voltage VCE (V)
–100
–200
–300
IC — VBE
–25˚C
–160
–120
–80
–40
–3
Ta=75˚C
25˚C
–25˚C
–0.3
–0.1
–0.03
–0.01
–0.003
0
–0.4
–0.8
–1.2
–1.6
–2.0
–0.001
–1
fT — IE
–30
–1.6
–100 –300 –1000
VCE= –10V
500
400
Ta=75˚C
300
25˚C
–25˚C
200
100
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Cob — VCB
8
160
Collector output capacitance Cob (pF)
VCB=–10V
Ta=25˚C
120
100
80
60
40
20
0
0.1
–10
Collector current IC (mA)
Base to emitter voltage VBE (V)
140
–3
–1.2
hFE — IC
IC/IB=10
–1
–0.8
600
Forward current transfer ratio hFE
25˚C
Collector to emitter saturation voltage VCE(sat) (V)
VCE=–5V
0
–0.4
Base to emitter voltage VBE (V)
VCE(sat) — IC
–10
Ta=75˚C
0
–400
Base current IB (µA)
–240
–200
–100
–50
0
Transition frequency fT (MHz)
–300
–10
–50µA
0
VCE= – 5V
Ta=25˚C
–350
–50
Collector current IC (mA)
Collector current IC (mA)
VCE=–5V
Ta=25˚C
IB=–300µA
–50
Collector current IC (mA)
IB — VBE
–400
–60
0.3
1
3
10
30
Emitter current IE (mA)
100
f=1MHz
IE=0
Ta=25˚C
7
6
5
4
3
2
1
0
–1
–2 –3 –5
–10
–20–30 –50 –100
Collector to base voltage VCB (V)
3
Composite Transistors
XN4482
Characteristics charts of Tr2
IC — VCE
IC — I B
Ta=25˚C
–600
–500
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–400
–3mA
–300
–2mA
–1mA
–200
Collector current IC (mA)
VCE=–10V
Ta=25˚C
–600
–500
–400
–300
–200
–100
–100
0
0
0
–4
–8
–12
–16
0
–20
–2
VBE(sat) — IC
–3
25˚C
Ta=–25˚C
75˚C
–0.3
–0.1
–0.03
–10
–30
–100 –300 –1000
Collector current IC (mA)
Cob — VCB
Collector output capacitance Cob (pF)
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–1
–2 –3 –5
–10
–20 –30 –50 –100
Collector to base voltage VCB (V)
4
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–6
–8
–0.001
–1
–10
–3
–10
–30
fT — I E
240
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
–1
–100 –300 –1000
Collector current IC (mA)
VCE=–10V
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
–10
–3
–1
hFE — IC
–30
–0.01
–1
–4
300
IC/IB=10
–1
–3
Base current IB (mA)
Collector to emitter voltage VCE (V)
–100
IC/IB=10
–0.003
VCB=–10V
Ta=25˚C
Transition frequency fT (MHz)
Collector current IC (mA)
–10
–700
–700
IB=–10mA
VCE(sat) — IC
–800
Collector to emitter saturation voltage VCE(sat) (V)
–800
200
160
120
80
40
0
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
1
2
3
5
10
20 30 50
Emitter current IE (mA)
100