This product complies with the RoHS Directive (EU 2002/95/EC). DB22320 Silicon epitaxial planar type For rectification Features Package Low forward voltage VF and small reverse current IR Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code Mini2-F4-B Pin Name 1: Cathode 2: Anode Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Marking Symbol: B5 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 1.5 A Non-repetitive peak forward surge current * IFSM 30 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Reverse voltage Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit VF1 IF = 0.5 A 0.38 VF2 IF = 1.0 A 0.42 VF3 IF = 1.5 A 0.46 Reverse current IR VR = 30 V 100 Terminal capacitance Ct VR = 10 V, f = 1 MHz 48 pF Reverse recovery time * trr IF = IR = 100 mA, Irr = 0.1 × IR , RL = 100 Ω 16 ns Forward voltage V µA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: August 2010 VR Ver. BED t IF trr 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse IF = 100 mA IR = 100 mA RL = 100 Ω t Irr = 10 mA 1 This product complies with the RoHS Directive (EU 2002/95/EC). DB22320 DB22320_ IR-VR DB22320_ IF-VF 1 10−1 10−1 10−4 85°C 10−6 25°C −30°C 0 0.1 0.2 −30°C 10−7 0.3 Forward voltage VF (V) 2 25°C 10−5 10−4 0.4 10−8 0 10 20 Reverse voltage VR (V) Ver. BED Ta = 25°C 300 100°C 85°C Reverse current IR (A) Forward current IF (A) 100°C 10−3 10−5 Ta = 125°C 10−3 10−2 Ct VR 350 10−2 Ta = 125°C DB22320_Ct-VR IR VR Terminal capacitance Ct (pF) IF VF 250 200 150 100 50 30 0 0 10 20 Reverse voltage VR (V) 30 This product complies with the RoHS Directive (EU 2002/95/EC). DB22320 Mini2-F4-B 0.45 ±0.10 Unit: mm 1.60 ±0.10 7° 3.50 ±0.10 2.60 ±0.10 2 1 0.55 ±0.10 0.13 +0.05 −0.02 0 to 0.30 0 to 0.10 0.80 ±0.05 7° Ver. BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. 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At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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