UMS CHM2179A-99F/00 W-band mixer Datasheet

CHM2179a
W-band Mixer
GaAs Monolithic Microwave IC
Description
LO
RF
The CHM2179a is a balanced Schottky
diode mixer based on a six quarter wave
ring structure. This circuit is manufactured
with the BES-MMIC process: 1 µm
Schottky diode device, air bridges, via
holes through the substrate, stepper
lithography.
It is available in chip form.
IF
-5
Conversion loss (dB)
Main Features
■ W-band LO and RF frequency range
■ Low conversion loss
■ IF from DC to 100MHz
■ High LO/RF isolation
■ High LO/AM noise rejection
■ Very low IF noise
■ Low LO input power
■ Small chip size: 1.53 x 1.17 x 0.10 mm
-7,5
-10
-12,5
-15
75
75,5
76
76,5
77
77,5
LO Frequency (GHz)
Typical conversion characteristic
LO power = 5dBm ; IF=10MHz
(measurement in test fixture)
Main Characteristics
Tamb. = 25°C
Symbol
F_LO,F_RF
F_IF
Parameter
LO,RF frequency range
IF frequency range
Typ
Unit
76-77
GHz
DC-100
MHz
Lc
Conversion loss
7.5
dB
I_LO/RF
LO/RF isolation
20
dB
-158
dBm/Hz
N_IF
IF noise density @ 100kHz
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCH21790192 - 22-Jun-00
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
78
W-band Mixer
CHM2179a
Electrical Characteristics
Tamb. = 25°C, used according to section “Typical bias and IF configuration” and “Typical
assembly and RF configuration”
Symbol
F_LO,F_RF
F_IF
Parameter
Min
LO,RF frequency range
IF frequency range
Lc
Conversion loss
P_LO
LO input power
Typ
Max
Unit
76-77
GHz
DC-100
MHz
7.5
9
dB
5
7
dBm
3
VSWR_LO
LO port VSWR (50Ω)
2:1
VSWR_RF
RF port VSWR (50Ω)
2:1
IF_load
IF load impedance
200
Ω
I_LO/RF
LO/RF isolation
22
dB
27
dB
-158
dBm/Hz
1
mA
R_AM_LO
N_IF
Id
17
LO AM noise rejection
IF noise density @ 100kHz (1)
Supply current (2)
(1) Measured on 50Ω IF load impedance.
(2) See on chapter “Typical bias and IF configuration”
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Values
Unit
Supply current
3
mA
P_LO
Maximum peak input power overdrive at LO port (2)
10
dBm
P_RF
Maximum peak input power overdrive at RF port (2)
10
dBm
Id
Parameter
Top
Operating temperature range
-40 to +100
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. : DSCH21790192 - 22-Jun-00
2/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Mixer
CHM2179a
Chip Mechanical Data and Pin References
3
2
1
4
5
6
11
10
9
8
7
Unit = µm
External chip size = 1530 x 1170
Chip thickness = 100 +/- 10
HF Pads (2,5) = 68 x 118
DC/IF Pads = 100 x 100
Pin number
Pin name
1,3,4,6
2
5
7
8
9
10
11
LO
RF
GND
IF
C_ext
+V
Ref. : DSCH21790192 - 22-Jun-00
Description
Ground : should not be bonded. If required,
please ask for more information.
LO input
RF input
Ground (optional)
Not Connected
IF output
Bias decoupling
Positive supply voltage
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Mixer
CHM2179a
Typical Bias and IF Configuration
Several external configurations are possible for bias and IF. The objective is to give
flexibility for the integration.
As this component is mainly dedicated to low IF use, there are several possibilities for
interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200Ω,
however depending on the IF amplifier noise characteristic this load can be modified in order
to optimise the noise figure. A series capacitor, between IF output and the load is
recommended.
Due to high sensitivity to electrical discharges a integrated resistance is used and two ports
are available for biasing. One is for the connection of a decoupling capacitor (C_ext) and the
other one is for the supply voltage connection through an external series resistance (+V
port). However, in order to keep the compatibility with the CHM2179, only the “C_ext” port
can be used.
+V
+V
R_load_IF
R_load_IF
C_bias
C_ext
R_bias1
+V
C_bias
C_IF
R_bias2
C_IF
IF
C_ext
+V
IF
1k
1k
RF
LO
RF
LO
Other possible configuration
Recommended external bias and
IFconfiguration
(compatible with the previous version)
The recommended values for external components are:
C_bias
R_bias1
R_bias2
R_load_IF
R_bias*C >> 1/F_IF
2.9kΩ for 1mA current consumption (V = 4.5V, typical LO
power)
R_bias2 = R_bias1 + 1kΩ
From 50 to 200Ω
Notes::
1. R_bias = R_bias1 + 1kΩ when “+V” port is used, otherwize R_bias = R_bias2
2. R_bias can be adjusted if necessary; This allows to optimise the performances when
some parameters are different from recommended ones (Supply voltage, LO power …).
However maximum ratings for the current have to be taken into account.
3. A series capacitor at IF outputs is recommended for DC decoupling.
Ref. : DSCH21790192 - 22-Jun-00
4/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Mixer
CHM2179a
Typical Assembly and RF Configuration
In order to use acceptable wire bonding length, compatible with automatic
pick and place and wire bonding equipment, an external matching network is
proposed on low dielectric constant substrate.
50 Ohm
L ~ 0.25nH
11
1
L ~ 0.25nH
250
150
420
860
Er ~ 2.2
h = 0.127mm
390
120 100
3
2
10
9
8
7
5
4
390
100 120
200
6
Er ~ 2.2
h = 0.127mm
630
320
200
390
390
50 Ohm
Example of integration using low dielectric constant substrate : Er=2.2,
heigh=0.127mm (dimensions are in µm)
Ref. : DSCH21790192 - 22-Jun-00
5/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Mixer
CHM2179a
Ordering Information
Chip form
:
CHM2179a-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCH21790192 - 22-Jun-00
6/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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