Composite Transistors XN05531 (XN5531) Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3130 × 2 elements ■ Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 10 V VEBO 3 V IC 50 mA PT 200 mW Total power dissipation Overall Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Emitter (Tr2) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini6-G1 Package Marking Symbol: 5M Internal Connection 6 Tr1 4 Parameter Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 2mA, IB = 0 10 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V Collector cutoff current *1 1 2 5 ■ Electrical Characteristics 0.4±0.2 1 (0.65) Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25 –0.05 6 1.1+0.3 –0.1 ● 5 0.16+0.10 –0.06 5° 4 ■ Features ● Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) For high frequency oscillation and mixing ICBO VCB = 10V, IE = 0 1 µA ICEO VCE = 10V, IB = 0 10 µA Forward current transfer ratio hFE1 VCE = 4V, IC = 5mA 75 200 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 4V, IC = 5mA 0.5 0.99 hFE2/hFE1 ratio hFE2/hFE1 VCE = 4V, IC = 100µA VCE = 4V, IC = 5mA 0.75 1.6 Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 4mA Collector output capacitance Cob VCB = 4V, IE = 0, f = 1MHz 0.5 V 1.1 pF Transition frequency fT VCB = 4V, IE = –5mA, f = 200MHz Collector to base parameter rbb'·CC VCB = 4V, IE = –5mA, f = 30MHz 1.9 2.5 GHz 11.8 13.5 ps Common base reverse transfer capacitance Crb VCB = 4V, IE = 0, f = 1MHz 0.25 0.35 pF 0.9 1.4 400 Ratio between 2 elements Note) The Part number in the Parenthesis shows conventional part number. 1 XN05531 Composite Transistors PT — Ta IC — VCE 240 IC — VBE 80 60 160 120 80 60 IB=500µA 400µA 40 300µA 200µA 20 100µA 40 40 80 120 0 160 2 3 1 Ta=75˚C 25˚C –25˚C 1 0.3 3 10 30 100 Cob — VCB Collector output capacitance Cob (pF) 1.6 f=1MHz IE=0 Ta=25˚C 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 6 8 10 12 0 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) fT — I E 4.0 300 Ta=75˚C 240 25˚C 180 –25˚C 120 60 VCB=4V Ta=25˚C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 0.3 1 3 10 30 Collector current IC (mA) Collector current IC (mA) 1.4 20 VCE=4V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 0.01 0.1 30 hFE — IC 30 0.03 4 360 IC/IB=10 0.1 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Ambient temperature Ta (˚C) 0.3 Ta=75˚C 10 Transition frequency fT (GHz) 0 Collector current IC (mA) 50 Collector current IC (mA) Total power dissipation PT (mW) 200 0 2 VCE=4V 25˚C Ta=25˚C 100 0 –0.1 –0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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