PANASONIC DA2DF62

DA2DF62
Tentative
Total pages
page
DA2DF62
Silicon epitaxial planar type
For high frequency rectification
Marking Symbol : DA2DF62
Package Code : TO-220D-B1
Absolute Maximum Ratings Ta = 25 °C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
Non-repetitive peak peak reverse voltage
Forward current
Ta = 25 °C
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
VRRM
VRSM
IF(AV)
IFSM
Tj
Tstg
600
600
10
40
150
-40 to +150
V
V
A
A
°C
°C
*
Note: 1. *1 50 Hz sine wave 1cycle(Non-repetitive peak current)
Electrical Characteristics Ta = 25 °C±3 °C
Parameter
Forward voltage
Reverse current
Reverse recovery time
Themal resistance
Themal resistance
Symbol
VF
IRRM
*1
trr
Rth(j-c)
Rth(j-a)
Conditions
IF = 10 A
VRRM = 600 V
IF = 0.5 A, VR = 1.0 A
Irr = 0.25 A
Min
Typ
Max
Unit
1.4
1.7
10
V
μA
25
40
ns
4.0
63
°C / W
°C / W
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring
methods for Diodes.
2. Absolute frequency of input and outpot is 10 MHz
3. *1 R-load trr test circuit
Packing
Magagine 50 pcs
2009.10.28
2010.8.31
Prepared
Revised
Semiconductor Company, Panasonic Corporation
TO-220D-B1
Unit: mm
4.6 ±0.2
9.9 ±0.3
3.0 ±0.5
2.9 ±0.2
1.4 ±0.2
13.7 ±0.2
+0
1.5 −0.4
4.2 ±0.2
15.0 ±0.5
φ3.2 ±0.1
0.8 ±0.1
1
2
2.54 ±0.3
5.08 ±0.5
2.6 ±0.1
0.40 ±0.05
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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