BCP55 1A , 60V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-223 For AF driver and output stages High collector current Low collector-emitter saturation voltage A M 4 Top View CLASSIFICATION OF hFE Product-Rank 1 2 BCP55-16 Range CB K L 3 E 100~250 D F PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13’ inch G H Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. A B C D E F J Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 REF. G H J K L M ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1 A Collector Power Dissipation PD 1.5 W Typical Thermal Resistance RθJA 83.3 °C /W Storage Temperature TSTG -65~+150 °C Parameter ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Min. Max. Unit Collector-base breakdown voltage Parameter V(BR)CBO 60 - V IC=0.1mA , IE=0 Collector-emitter breakdown voltage V(BR)CEO 60 - V IC= 10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - V IE= 10µA, IC=0 Collector cut-off current ICBO - 100 nA VCB= 30V, IE=0 25 - DC current gain hFE 100 250 VCE= 2V, IC= 150mA 25 - VCE= 2V, IC= 500mA VCE(sat) - 0.5 V IC=500mA, IB= 50mA VBE(on) - 1 V VCE= 2V, IC= 500mA fT 100 - MHz Collector-emitter saturation voltage Base-emitter voltage Transition frequency http://www.SeCoSGmbH.com/ 11-Aug-2014 Rev. A 1 1 Test Conditions VCE= 2V, IC= 5mA VCE=10V, IC=50mA, f=100MHz Any changes of specification will not be informed individually. Page 1 of 2 BCP55 Elektronische Bauelemente 1A , 60V NPN Silicon Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 11-Aug-2014 Rev. A Any changes of specification will not be informed individually. Page 2 of 2