PANASONIC 2SK0655

Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
unit: mm
For switching
4.0±0.2
■ Features
7.6
(0.8)
3.0±0.2
2.0±0.2
15.6±0.5
0.45+0.20
–0.10
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VGSO
ID
IDP
PD
Tch
Tstg
(0.8)
0.75 max.
● High-speed switching
● Allowing to supply with the radial taping
0.45+0.20
–0.10
(2.5) (2.5)
Ratings
50
8
100
200
200
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.7±0.1
1
2
1: Source
2: Drain
3: Gate
NS-B1 Package
3
Internal Connection
D
G
S
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Conditions
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VGS = 0
ID = 100µA, VDS = VGS
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
VDS = 5V, VGS = 0, f = 1MHz
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
min
typ
50
1.5
20
max
10
50
3.5
50
35
10
4
0.5
10
20
15
5
1
Unit
µA
µA
V
V
Ω
mS
pF
pF
pF
ns
ns
ton, toff measurement circuit
Vout
VGS = 5V
50Ω
200Ω
100µF
*
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
Ciss
Coss
Crss
ton*
toff*
90%
10%
Vin
VDD = 5V
Vout
10%
90%
ton
toff
Note) The part number in the parenthesis shows conventional part number.
283
Silicon MOS FETs (Small Signal)
2SK0655
PD  Ta
ID  VDS
120
60
100
Drain current ID (mA)
200
160
120
80
40
VGS=6.0V
5.5V
80
5.0V
60
4.5V
40
4.0V
3.5V
20
0
3.0V
2.5V
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
6
4
Coss
Crss
3
10
100
Drain to source voltage VDS (V)
VIN  IO
100
VO=5V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3
1
3
10
30
Output current IO (mA)
10
0
2
100
Ta=–25˚C
80
25˚C
75˚C
60
40
100
0
2
4
6
4
6
8
10
12
Gate to source voltage VGS (V)
RDS(on)  VGS
0
30
20
0
20
2
0
30
12
VDS=5V
Ta=25˚C
Drain current ID (mA)
8
1
Input voltage VIN (V)
10
40
ID  VGS
Ciss
284
8
120
VGS=0
f=1MHz
Ta=25˚C
10
6
VDS=5V
Ta=25˚C
50
Drain to source voltage VDS (V)
Ciss, Coss, Crss  VDS
12
4
8
10
12
Gate to source voltage VGS (V)
Drain to source ON-resistance RDS(on) (Ω)
Allowable power dissipation PD (mW)
Ta=25˚C
Forward transfer admittance |Yfs| (mS)
240
| Yfs |  VGS
120
ID=20mA
100
80
60
Ta=75˚C
40
25˚C
–25˚C
20
0
0
2
4
6
8
10
12
Gate to source voltage VGS (V)
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2001 MAR