INTERSIL EL7155

EL7155
®
Data Sheet
January 30, 2002
FN7279
High Performance Pin Driver
Features
The EL7155 high performance pin
driver with 3-state is suited to many
ATE and level-shifting applications.
The 3.5A peak drive capability makes this part an excellent
choice when driving high capacitance loads.
• Clocking speeds up to 40MHz
Output pins OUTH and OUTL are connected to input pins VH
and VL respectively, depending on the status of the IN pin.
One of the output pins is always in tri-state, except when the
OE pin is active low, in which case both outputs are in 3state mode. The isolation of the output FETs from the power
supplies enables VH and VL to be set independently,
enabling level-shifting to be implemented.
• 3.5pF typical input capacitance
This pin driver has improved performance over existing pin
drivers. It is specifically designed to operate at voltages
down to 0V across the switch elements while maintaining
good speed and on-resistance characteristics.
Applications
Available in 8-Pin SO and 8-Pin PDIP packages, the EL7155
is specified for operation over the full -40°C to +85°C
temperature range.
• IGBT drivers
Pinout
1
OE
2
IN
3
GND
4
L
o
g
i
c
1
• 0.5ns rise and fall times mismatch
• 0.5ns TON-TOFF prop delay mismatch
• 3.5A peak drive
• Low on resistance of 3.5Ω
• High capacitive drive capability
• Operates from 4.5V up to 18V
• ATE/burn-in testers
• Level shifting
• CCD drivers
Ordering Information
EL7155
(8-PIN PDIP, SO)
TOP VIEW
VS+
• 15ns tr/tf at 2000pF CLOAD
8
VH
7
OUTH
6
OUTL
5
VL
PART NUMBER
PACKAGE
TAPE & REEL
PKG. NO.
EL7155CN
8-Pin PDIP
-
MDP0031
EL7155CS
8-Pin SO
-
MDP0027
EL7155CS-T7
8-Pin SO
7”
MDP0027
EL7155CS-T13
8-Pin SO
13”
MDP0027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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EL7155
Absolute Maximum Ratings (TA = 25°C)
Supply Voltage (VS+ to VL) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VL -0.3V, VL+ +0.3V
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 125°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see curves
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER
VS+ = +15V, VH = +15V, VL = 0V, TA = 25°C, unless otherwise specified.
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT
VIH
Logic ‘1’ Input Voltage
IIH
Logic ‘1’ Input Current
VIL
Logic ‘0’ Input Voltage
IIL
Logic ‘0’ Input Current
CIN
Input Capacitance
3.5
pF
RIN
Input Resistance
50
MΩ
2.4
VIH = VS+
V
0.1
VIL = 0V
0.1
10
µA
0.8
V
10
µA
OUTPUT
ROVH
ON Resistance VH to OUTH
IOUT = -200mA
2.7
4.5
Ω
ROVL
ON Resistance VL to OUTL
IOUT = +200mA
3.5
5.5
Ω
IOUT
Output Leakage Current
OE = 0V, OUTH = VL, OUTL = VS+
0.1
10
µA
IPK
Peak Output Current
(linear resistive operation)
Source
3.5
A
Sink
3.5
A
Continuous Output Current
Source/Sink
IDC
200
mA
POWER SUPPLY
IS
Power Supply Current
Inputs = VS+
IVH
Off Leakage at VH
VH = 0V
1.3
3
mA
4
10
µA
SWITCHING CHARACTERISTICS
tR
Rise Time
CL = 2000pF
14.5
ns
tF
Fall Time
CL = 2000pF
15
ns
tRF∆
tR, tF Mismatch
CL = 2000pF
0.5
ns
tD-1
Turn-Off Delay Time
CL = 2000pF
9.5
ns
tD-2
Turn-On Delay Time
CL = 2000pF
10
ns
tD∆
tD-1-tD-2 Mismatch
CL = 2000pF
0.5
ns
tD-3
3-state Delay Enable
10
ns
tD-4
3-state Delay Disable
10
ns
2
EL7155
Electrical Specifications
PARAMETER
VS+ = +5V, VH = +5V, VL = -5V, TA = 25°C, unless otherwise specified.
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT
VIH
Logic ‘1’ Input Voltage
IIH
Logic ‘1’ Input Current
VIL
Logic ‘0’ Input Voltage
IIL
Logic ‘0’ Input Current
CIN
Input Capacitance
3.5
pF
RIN
Input Resistance
50
MΩ
2.0
VIH = VS+
V
0.1
VIL = 0V
0.1
10
µA
0.8
V
10
µA
OUTPUT
ROVH
ON Resistance VH to OUTH
IOUT = -200mA
3.4
5
Ω
ROVL
ON Resistance VL to OUTL
IOUT = +200mA
4
6
Ω
IOUT
Output Leakage Current
OE = 0V, OUTH = VL, OUTL = VS+
0.1
10
µA
IPK
Peak Output Current
(linear resistive operation)
Source
3.5
A
Sink
3.5
A
Continuous Output Current
Source/Sink
IDC
200
mA
POWER SUPPLY
IS
Power Supply Current
Inputs = VS+
1
2.5
mA
IVH
Off Leakage at VH
VH = 0V
4
10
µA
SWITCHING CHARACTERISTICS
tR
Rise Time
CL = 2000pF
17
ns
tF
Fall Time
CL = 2000pF
17
ns
tRF∆
tR, tF Mismatch
CL = 2000pF
0
ns
tD-1
Turn-Off Delay Time
CL = 2000pF
11.5
ns
tD-2
Turn-On Delay Time
CL = 2000pF
12
ns
tD∆
tD-1-tD-2 Mismatch
CL = 2000pF
0.5
ns
tD-3
3-state Delay Enable
11
ns
tD-4
3-state Delay Disable
11
ns
3
EL7155
Typical Performance Curves
Package Power Dissipation vs Ambient Temperature
JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board
Input Threshold vs Supply Voltage
T=25°C
1.8
Max TJ=125°C
1
High Threshold
θJA=100°C/W
0.8
1.6
Input Voltage (V)
Power Dissipation (W)
PDIP8
0.6
SO8
0.4
θJA=160°C/W
Hysteresis
1.4
1.2
Low Threshold
0.2
0
1.0
0
25
50
75
85 100
125
150
5
10
Ambient Temperature (°C)
Supply Voltage (V)
Quiescent Supply Current vs Supply Voltage
T=25°C
“On” Resistance vs Supply Voltage
IOUT=200mA, T=25°C, VS+=VH, VL=0V
2.0
6
“On” Resistance (Ω)
Supply Current (mA)
VOUT-VL
5
1.6
All Inputs = GND
1.2
0.8
4
VOUT-VH
3
2
All Inputs = VS+
0.4
1
0
0
5
15
10
5
7.5
Supply Voltage (V)
10
12.5
15
Supply Voltage (V)
Rise/Fall Time vs Temperature
CL=2000pF, VS+=15V
Rise/Fall Time vs Supply Voltage
CL=2000pF, T=25°C
30
20
18
Rise/Fall Time (ns)
25
Rise/Fall Time (ns)
15
tR
20
tI
tF
15
tF
16
14
tR
12
tR
10
5
10
Supply Voltage (V)
4
15
10
-50
0
50
Temperature (°C)
100
150
EL7155
Typical Performance Curves
(Continued)
Propagation Delay vs Supply Voltage
CL=2000pF, T=25°C
Propagation Delay vs Temperature
CL=2000pF, VS+=15V
14
17
12
15
tD-2
Delay Time (ns)
Delay Time (ns)
tD-2
13
tD-1
11
10
tD-1
8
9
5
10
6
-50
15
Supply Voltage (V)
-25
0
25
50
75
100
125
Temperature (°C)
Supply Current vs Load Capacitance
VS+=VH=15V, VL=0V, T=25°C, f=20kHz
Rise/Fall Time vs Load Capacitance
VS+=+15V, T=25°C
70
5
60
Supply Current (mA)
Rise/Fall Time (ns)
4
50
40
tF
30
20
0
100
1000
10000
Load Capacitance (pF)
Supply Current (mA)
100
VS+=15V
VS+=10V
1.0
VS+=5V
0.1
10k
100k
Frequency (Hz)
5
1M
0
100
1000
Load Capacitance (pF)
Supply Current vs Frequency
CL=1000pF, T=25°C
10
2
1
tR
10
3
10M
10000
EL7155
Truth Table
Operating Voltage Range
OE
IN
VH TO OUTH
OUTL TO VS-
PIN
MIN
MAX
0
0
Open
Open
GND - VL
-5
0
0
1
Open
Open
VS+ - VL
5
18
1
0
Closed
Open
VH - VL
0
18
1
1
Open
Closed
VS+ - VH
0
18
VS+ - GND
5
18
3-state Output
VL
VH
Timing Diagrams
5V
Input 2.5V
0
Inverted
Output
90%
10%
tD1
tD2
tF
tR
Standard Test Configuration
VS+
VH
1
4.7µ
VS+
10k
0.1µ
2
OE
IN
3
8
0.1µ
L
o
g
i
c
4.7µ
7
OUT
6
2000p
GND
4
5
-
EL7155
0.1µ
6
4.7µ
VL
EL7155
Pin Descriptions
PIN
NAME
FUNCTION
1
VS+
Positive Supply Voltage
2
OE
Output Enable
EQUIVALENT CIRCUIT
VS+
INPUT
VL
Circuit 1
3
IN
4
GND
5
VL
6
OUTL
Input
Reference Circuit 1
Ground
Negative Supply Voltage
Lower Switch Output
VS+
OUTL
VL
Circuit 2
7
OUTH
Upper Switch Output
VH
VS+
VL
OUTH
VL
Circuit 3
8
VH
Upper Output Voltage
Block Diagram
OE
VH
VS+
IN
Level
Shifter
3-State
Control
OUTH
OUTL
GND
VL
7
EL7155
Applications Information
Product Description
The EL7155 is a high performance 40MHz pin driver. It
contains two analog switches connecting VH to OUTH and
VL to OUTL. Depending on the value of the IN pin, one of the
two switches will be closed and the other switch open. An
output enable (OE) is also supplied which opens both
switches simultaneously.
Due to the topology of the EL7155, VL should always be
connected to a voltage equal to, or lower than GND. VH can
be connected to any voltage between VL and the positive
supply, VS+.
The EL7155 is available in both the 8-pin SO and the 8-pin
PDIP packages. The relevant package should be chosen
depending on the calculated power dissipation.
Power Dissipation Calculation
When switching at high speeds, or driving heavy loads, the
EL7155 drive capability is limited by the rise in die
temperature brought about by internal power dissipation. For
reliable operation die temperature must be kept below
TJMAX (125°C). It is necessary to calculate the power
dissipation for a given application prior to selecting the
package type.
Power dissipation may be calculated:
2
2
PD = ( V S × I S ) + ( C INT × V S × f ) + ( C L × V OUT × f )
where:
VS is the total power supply to the EL7155 (from VS+ to
GND)
VOUT is the swing on the output (VH - VL)
3-state Operation
CL is the load capacitance
When the OE pin is low, the output is 3-state (floating.) The
output voltage is the parasitic capacitance’s voltage. It can
be any voltage between VH and VL, depending on the
previous state. At 3-state, the output voltage can be pushed
to any voltage between VH and VL. The output voltage can’t
be pushed higher than VH or lower than VL since the body
diode at the output stage will turn on.
CINT is the internal load capacitance (100pF max)
IS is the quiescent supply current (3mA max)
f is frequency
Having obtained the application’s power dissipation, a
maximum package thermal coefficient may be determined,
to maintain the internal die temperature below TJMAX:
( T JMAX – T MAX )
θ JA = ---------------------------------------------PD
Supply Voltage Range and Input Compatibility
The EL7155 is designed for operation on supplies from 5V to
15V (4.5V to 18V maximum). The table on page 6 shows the
specifications for the relationship between the VS+, VH, VL,
and GND pins.
All input pins are compatible with both 3V and 5V CMOS
signals. With a positive supply (VS+) of 5V, the EL7155 is
also compatible with TTL inputs.
Power Supply Bypassing
When using the EL7155, it is very important to use adequate
power supply bypassing. The high switching currents
developed by the EL7155 necessitate the use of a bypass
capacitor between the VS+ and GND pins. It is
recommended that a 2.2µF tantalum capacitor be used in
parallel with a 0.1µF low-inductance ceramic MLC capacitor.
These should be placed as close to the supply pins as
possible. It is also recommended that the VH and VL pins
have some level of bypassing, especially if the EL7155 is
driving highly capacitive loads.
where:
TJMAX is the maximum junction temperature (125°C)
TMAX is the maximum operating temperature
PD is the power dissipation calculated above
θJA thermal resistance on junction to ambient
θJA is 160°C/W for the SO8 package and 100°C/W for the
PDIP8 package when using a standard JEDEC JESD51-3
single-layer test board. If TJMAX is greater than 125°C when
calculated using the equation above, then one of the
following actions must be taken:
Reduce θJA the system by designing more heat-sinking
into the PCB (as compared to the standard JEDEC
JESD51-3)
Use the PDIP8 instead of the SO8 package
De-rate the application either by reducing the switching
frequency, the capacitive load, or the maximum operating
(ambient) temperature (TMAX)
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