Cypress CY7C1367B-166AI 9-mb (256k x 36/512k x 18) pipelined dcd sync sram Datasheet

CY7C1366B
CY7C1367B
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
Functional Description[1]
Features
• Supports bus operation up to 225 MHz
• Available speed grades are 225, 200 and 166 MHz
• Registered inputs and outputs for pipelined operation
• Optimal for performance (Double-Cycle deselect)
— Depth expansion without wait state
• 3.3V –5% and +10% core power supply (VDD)
• 2.5V / 3.3V I/O operation
• Fast clock-to-output times
— 2.8 ns (for 225-MHz device)
The CY7C1366B/CY7C1367B SRAM integrates 262,144 x 36
and 524,288 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE1), depth-expansion Chip
Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP,
and ADV), Write Enables (BWX, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
— 3.0 ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-Ball fBGA packages
• IEEE 1149.1 JTAG-Compatible Boundary Scan
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the byte write control inputs. GW active LOW
causes all bytes to be written. This device incorporates an
additional pipelined enable register which delays turning off
the output buffers an additional cycle when a deselect is
executed.This feature allows depth expansion without penalizing system performance.
The CY7C1366B/CY7C1367B operates from a +3.3V core
power supply while all outputs operate with a +3.3V or a +2.5V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
• “ZZ” Sleep Mode Option
Selection Guide
225 MHz
200 MHz
166 MHz
Unit
Maximum Access Time
2.8
3.0
3.5
ns
Maximum Operating Current
250
220
180
mA
Maximum CMOS Standby Current
30
30
30
mA
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Notes:
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE3 is for TQFP and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.
Cypress Semiconductor Corporation
Document #: 38-05096 Rev. *B
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Revised February 23, 2004
CY7C1366B
CY7C1367B
1
Logic Block Diagram – CY7C1366B (256K x 36)
ADDRESS
REGISTER
A0,A1,A
2 A[1:0]
MODE
ADV
CLK
BURST
Q1
COUNTER AND
LOGIC
CLR
Q0
ADSC
ADSP
BWD
DQD,DQPD
BYTE
WRITE REGISTER
DQD,DQPD
BYTE
WRITE DRIVER
BWC
DQc,DQPC
BYTE
WRITE REGISTER
DQc,DQPC
BYTE
WRITE DRIVER
DQB,DQPB
BYTE
WRITE REGISTER
DQB,DQPB
BYTE
WRITE DRIVER
BWB
GW
CE1
CE2
CE3
OE
ENABLE
REGISTER
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
DQs
DQPA
DQPB
DQPC
DQPD
E
DQA,DQPA
BYTE
WRITE DRIVER
DQA,DQPA
BYTE
WRITE REGISTER
BWA
BWE
MEMORY
ARRAY
INPUT
REGISTERS
PIPELINED
ENABLE
SLEEP
ZZ
CONTROL
2
Logic Block Diagram – CY7C1367B (512K x 18)
A0, A1, A
ADDRESS
REGISTER
2
MODE
ADV
CLK
A[1:0]
Q1
BURST
COUNTER AND
LOGIC
CLR
Q0
ADSC
ADSP
BWB
BWA
BWE
GW
CE1
CE2
CE3
DQB , DQPB
BYTE
WRITE DRIVER
DQB, DQPB
BYTE
WRITE REGISTER
DQA, DQPA
BYTE
WRITE DRIVER
DQA , DQPA
BYTE
WRITE REGISTER
ENABLE
REGISTER
PIPELINED
ENABLE
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
DQs,
DQPA
DQPB
E
INPUT
REGISTERS
OE
ZZ
SLEEP
CONTROL
Document #: 38-05096 Rev. *B
Page 2 of 32
CY7C1366B
CY7C1367B
Pin Configurations
NC
NC
NC
CY7C1367B
(512K x 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VDDQ
VSSQ
NC
NC
DQB
DQB
VSSQ
VDDQ
DQB
DQB
NC
VDD
NC
VSS
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQPB
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
NC / 72M
NC / 36M
VSS
VDD
NC / 18M
A
A
A
A
A
A
A
A
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
DQPA
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
CY7C1366B
(256K X 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
NC / 72M
NC / 36M
VSS
VDD
NC / 18M
A
A
A
A
A
A
A
A
DQPC
DQC
DQC
VDDQ
VSSQ
DQC
DQC
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
VSSQ
VDDQ
DQD
DQD
DQPD
A
A
CE1
CE2
NC
NC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
A
A
CE1
CE2
BWD
BWC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-pin TQFP Pinout (3 Chip Enables)
Document #: 38-05096 Rev. *B
A
NC
NC
VDDQ
VSSQ
NC
DQPA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
NC
NC
VSSQ
VDDQ
NC
NC
NC
Page 3 of 32
CY7C1366B
CY7C1367B
Pin Configurations (continued)
119-ball BGA (2 Chip Enable with JTAG)
1
CY7C1366B (256K x 36)
3
4
5
A
A
ADSP
A
VDDQ
2
A
B
C
NC
NC
CE2
A
A
A
ADSC
VDD
A
A
A
A
NC
NC
D
E
DQC
DQC
DQPC
DQC
VSS
VSS
NC
CE1
VSS
VSS
DQPB
DQB
DQB
DQB
F
VDDQ
DQC
VSS
OE
VSS
DQB
VDDQ
G
H
J
K
DQC
DQC
VDDQ
DQD
DQC
DQC
VDD
DQD
BWC
VSS
NC
VSS
ADV
BWB
VSS
NC
VSS
DQB
DQB
VDD
DQA
DQB
DQB
VDDQ
DQA
BWA
VSS
DQA
DQA
DQA
VDDQ
VSS
DQA
DQA
GW
VDD
CLK
NC
6
A
7
VDDQ
L
DQD
DQD
M
VDDQ
DQD
BWD
VSS
N
DQD
DQD
VSS
BWE
A1
P
DQD
DQPD
VSS
A0
VSS
DQPA
DQA
R
NC
A
MODE
VDD
NC
A
NC
T
U
NC
VDDQ
NC
TMS
A
TDI
A
TCK
A
TDO
NC
NC
ZZ
VDDQ
CY7C1367B (512K x 18)
1
2
3
4
5
6
7
A
VDDQ
A
A
ADSP
A
A
VDDQ
B
NC
CE2
A
A
NC
NC
A
A
ADSC
VDD
A
C
A
A
NC
D
DQB
NC
VSS
NC
VSS
DQPA
NC
E
NC
DQB
VSS
CE1
VSS
NC
DQA
OE
ADV
VSS
DQA
VDDQ
GW
VDD
VSS
VSS
NC
NC
DQA
VDD
DQA
NC
VDDQ
CLK
VSS
NC
DQA
NC
BWA
VSS
DQA
NC
NC
VDDQ
F
VDDQ
NC
VSS
G
H
J
NC
DQB
VDDQ
DQB
NC
VDD
BWB
VSS
NC
K
NC
DQB
VSS
L
M
DQB
VDDQ
NC
DQB
VSS
VSS
N
DQB
NC
VSS
BWE
A1
VSS
DQA
NC
P
NC
DQPB
VSS
A0
VSS
NC
DQA
R
T
U
NC
NC
VDDQ
A
A
TMS
MODE
A
TDI
VDD
NC
TCK
NC
A
TDO
A
A
NC
NC
ZZ
VDDQ
Document #: 38-05096 Rev. *B
Page 4 of 32
CY7C1366B
CY7C1367B
Pin Configurations (continued)
165-ball fBGA (3 Chip Enable)
CY7C1366B (256K x 36)
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC / 288M
A
CE1
BWC
BWB
CE3
BWE
ADSC
ADV
A
NC
R
NC
A
CE2
BWD
BWA
CLK
GW
A
NC / 144M
NC
DQC
VDDQ
VSS
VSS
VSS
VSS
VSS
VSS
VDDQ
VDDQ
VSS
VDD
OE
VSS
VDD
ADSP
DQPC
DQC
VDDQ
NC
DQB
DQPB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
DQB
DQB
DQC
NC
DQD
DQC
VSS
DQD
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
DQB
NC
DQA
DQB
ZZ
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQPD
DQD
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
NC / 18M
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
DQA
DQPA
NC
NC / 72M
A
A
TDI
A1
TDO
A
A
A
A
MODE
NC / 36M
A
A
TMS
A0
TCK
A
A
A
A
7
8
9
10
11
A
CY7C1367B (512K x 18)
1
2
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC / 288M
A
3
4
5
6
NC
CE3
A
CE1
CE2
BWB
NC
NC
BWA
NC
NC
NC
DQB
VDDQ
VSS
VDD
VSS
VDDQ
NC
DQB
VDDQ
NC
DQB
VDDQ
NC
NC
DQB
DQB
VSS
NC
VDDQ
NC
VDDQ
DQB
NC
DQB
DQB
DQPB
R
CLK
BWE
GW
ADSC
OE
ADV
ADSP
A
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VSS
VDDQ
NC
NC
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQA
VDD
VDD
VDD
VSS
VSS
‘VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
NC
NC
DQA
DQA
ZZ
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
NC
NC
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
NC / 18M
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
NC
NC
NC
NC / 72M
A
A
TDI
A1
TDO
A
A
A
A
MODE
NC / 36M
A
A
TMS
A0
TCK
A
A
A
A
Document #: 38-05096 Rev. *B
A
NC / 144M
DQPA
DQA
Page 5 of 32
CY7C1366B
CY7C1367B
CY7C1366B–Pin Definitions
Name
I/O
Description
A0, A1 , A
37,36,32,33
,34,35,43,4
4,45,46,47,
48,49,50,81
,82,99,100
R6,P6,A2,
P4,N4,A2,
C2,R2,3A, A10,B2,B10,
B3,C3,T3, P3,P4,P8,P9,
T4,A5,B5, P10,P11,R3,
C5,T5,A6, R4,R8,R9,
R10,R11
B6,C6,R6
InputSynchronous
Address Inputs used to select one of the 256K
address locations. Sampled at the rising edge of the
CLK if ADSP or ADSC is active LOW, and CE1, CE2,
and CE3 [2]are sampled active. A1: A0 are fed to the
two-bit counter.
BWA,BWB
93,94,95,96 L5,G5,G3, B5,A5,A4,B4
L3
InputSynchronous
Byte Write Select Inputs, active LOW. Qualified with
BWE to conduct byte writes to the SRAM. Sampled on
the rising edge of CLK.
Global Write Enable Input, active LOW. When
asserted LOW on the rising edge of CLK, a global write
is conducted (ALL bytes are written, regardless of the
values on BWX and BWE).
BWC,BWD
TQFP
BGA
(2 Chip
Enable)
fBGA
GW
88
H4
B7
InputSynchronous
BWE
87
M4
A7
InputSynchronous
Byte Write Enable Input, active LOW. Sampled on the
rising edge of CLK. This signal must be asserted LOW
to conduct a byte write.
CLK
89
K4
B6
InputClock
Clock Input. Used to capture all synchronous inputs to
the device. Also used to increment the burst counter
when ADV is asserted LOW, during a burst operation.
98
E4
A3
InputSynchronous
Chip Enable 1 Input, active LOW. Sampled on the
rising edge of CLK. Used in conjunction with CE2 and
CE3[2] to select/deselect the device. ADSP is ignored if
CE1 is HIGH.
CE2
97
B2
B3
InputSynchronous
Chip Enable 2 Input, active HIGH. Sampled on the
rising edge of CLK. Used in conjunction with CE1 and
CE3[2] to select/deselect the device.
CE3[2]
92
-
A6
InputSynchronous
OE
86
F4
B8
ADV
83
G4
A9
InputSynchronous
Advance Input signal, sampled on the rising edge of
CLK, active LOW. When asserted, it automatically
increments the address in a burst cycle.
84
A4
B9
InputSynchronous
Address Strobe from Processor, sampled on the
rising edge of CLK, active LOW. When asserted LOW,
addresses presented to the device are captured in the
address registers. A1: A0 are also loaded into the burst
counter. When ADSP and ADSC are both asserted, only
ADSP is recognized. ASDP is ignored when CE1 is
deasserted HIGH.
85
B4
A8
InputSynchronous
Address Strobe from Controller, sampled on the
rising edge of CLK, active LOW. When asserted LOW,
addresses presented to the device are captured in the
address registers. A1: A0 are also loaded into the burst
counter. When ADSP and ADSC are both asserted, only
ADSP is recognized.
CE1
ADSP
ADSC
Document #: 38-05096 Rev. *B
Chip Enable 3 Input, active LOW. Sampled on the
rising edge of CLK. Used in conjunction with CE1 and
CE2 to select/deselect the device.Not connected for
BGA. Where referenced, CE3[2] is assumed active
throughout this document for BGA.
InputOutput Enable, asynchronous input, active LOW.
Asynchronous Controls the direction of the I/O pins. When LOW, the
I/O pins behave as outputs. When deasserted HIGH,
DQ pins are three-stated, and act as input data pins. OE
is masked during the first clock of a read cycle when
emerging from a deselected state.
Page 6 of 32
CY7C1366B
CY7C1367B
CY7C1366B–Pin Definitions (continued)
Name
ZZ
TQFP
BGA
(2 Chip
Enable)
fBGA
64
T7
H11
K6,L6,M6,
N6,K7,L7,
N7,P7,E6,
F6,G6,H6,
D7,E7,G7,
H7,D1,E1,
G1,H1,E2,
F2,G2,H2,
K1,L1,N1,
P1,K2,L2,
M2,N2,P6,
D6,D2,P2
M11,L11,K11,
J11,J10,K10,
L10,M10,D10
,E10,F10,G10
,D11,E11,F11,
G11,D1,E1,
F1,G1,D2,E2,
F2,G2,J1,K1,
L1,M1,J2,K2,
L2,M2,N11,
C11,C1,N1
DQs, DQPs 52,53,56,57
,58,59,62,6
3,68,69,72,
73,74,75,
78,79,2,3,6,
7,8,9,
12,13,18,19
,22,23,24,2
5,28,29,51,
80,1,30
I/O
Description
InputZZ “sleep” Input, active HIGH. When asserted HIGH
Asynchronous places the device in a non-time-critical “sleep” condition
with data integrity preserved. For normal operation, this
pin has to be LOW or left floating. ZZ pin has an internal
pull-down.
I/OSynchronous
Bidirectional Data I/O lines. As inputs, they feed into
an on-chip data register that is triggered by the rising
edge of CLK. As outputs, they deliver the data contained
in the memory location specified by the addresses
presented during the previous clock rise of the read
cycle. The direction of the pins is controlled by OE.
When OE is asserted LOW, the pins behave as outputs.
When HIGH, DQs and DQPX are placed in a three-state
condition.
Power Supply Power supply inputs to the core of the device.
VDD
15,41,65,91 J2,C4,J4,R D4,D8,E4,E8,
4,J6
F4,F8,G4,G8,
H4,H8,J4,J8,
K4,K8,L4,L8,
M4,M8
VSS
17,40,67,90 D3,E3,F3,
H3,K3,M3,
N3,P3,D5,
E5,F5,H5,
K5,M5,N5,
P5
VSSQ
5,10,21,26,
55,60,71,76
VDDQ
4,11,20,27, A1,F1,J1, C3,C9,D3,D9, I/O Power Sup- Power supply for the I/O circuitry.
54,61,70,77 M1,U1,A7, E3,E9,F3,F9,
ply
F7,J7,M7, G3,G9,J3,J9,
U7
K3,K9,L3,L9,
M3,M9,N3,N9
–
C4,C5,C6,C7,
C8,D5,D6,D7,
E5,E6,E7,F5,
F6,F7,G5,G6,
G7,H2,H5,H6
,H7,J5,J6,J7,
K5,K6,K7,L5,
L6,L7,M5,M6,
M7,N4,N8
Ground
–
I/O Ground
Ground for the I/O circuitry.
MODE
31
R3
R1
TDO
–
U5
P7
TDI
–
U3
P5
JTAG serial
input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the
rising edge of TCK. If the JTAG feature is not being
utilized, this pin can be disconnected or connected to
VDD. This pin is not available on TQFP packages.
TMS
–
U2
R5
JTAG serial
input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the
rising edge of TCK. If the JTAG feature is not being
utilized, this pin can be disconnected or connected to
VDD. This pin is not available on TQFP packages.
Document #: 38-05096 Rev. *B
InputStatic
Ground for the core of the device.
JTAG serial
output
Synchronous
Selects Burst Order. When tied to GND selects linear
burst sequence. When tied to VDD or left floating selects
interleaved burst sequence. This is a strap pin and
should remain static during device operation. Mode Pin
has an internal pull-up.
Serial data-out to the JTAG circuit. Delivers data on
the negative edge of TCK. If the JTAG feature is not
being utilized, this pin should be disconnected. This pin
is not available on TQFP packages.
Page 7 of 32
CY7C1366B
CY7C1367B
CY7C1366B–Pin Definitions (continued)
TQFP
BGA
(2 Chip
Enable)
fBGA
I/O
Description
TCK
–
U4
R7
JTAG-Clock
Clock input to the JTAG circuitry. If the JTAG feature
is not being utilized, this pin must be connected to VSS.
This pin is not available on TQFP packages.
NC
14,16,66,
42,39,38
Name
B1,C1,R1, A11,B1,C2,
T1,T2,J3, C10,H1,H3,
D4,L4,5J, H9,H10,N2,
5R,6T,6U, N5,N7,N10,
B7,C7,R7 P1,A1,B11,P2
,R2,N6
–
No Connects. Not internally connected to the die
CY7C1367B–Pin Definitions
Name
TQFP
BGA
(2-Chip
Enable)
fBGA
P4,N4,A2, R6,P6,A2,
C2,R2,T2, A10,A11,B2,
A3,B3,C3, B10,P3,P4,
T3,A5,B5, P8,P9,P10,
C5,T5,A6, P11,R3,R4,
B6,C6,R6, R8,R9,R10,
R11
T6
I/O
Description
InputSynchronous
Address Inputs used to select one of the 512K
address locations. Sampled at the rising edge of the
CLK if ADSP or ADSC is active LOW, and CE1, CE2,
and CE3[2] are sampled active. A1: A0 are fed to the
two-bit counter.
A0, A1 , A
37,36,32,33,
34,35,43,44,
45,46,47,48,
49,50,80,81,
82,99,100
BWA,BWB
93,94
G3,L5
B5,A4
InputSynchronous
Byte Write Select Inputs, active LOW. Qualified with
BWE to conduct byte writes to the SRAM. Sampled on
the rising edge of CLK.
GW
88
H4
B7
InputSynchronous
Global Write Enable Input, active LOW. When
asserted LOW on the rising edge of CLK, a global write
is conducted (ALL bytes are written, regardless of the
values on BWX and BWE).
BWE
87
M4
A7
InputSynchronous
Byte Write Enable Input, active LOW. Sampled on the
rising edge of CLK. This signal must be asserted LOW
to conduct a byte write.
CLK
89
K4
B6
InputClock
Clock Input. Used to capture all synchronous inputs to
the device. Also used to increment the burst counter
when ADV is asserted LOW, during a burst operation.
98
E4
A3
InputSynchronous
Chip Enable 1 Input, active LOW. Sampled on the
rising edge of CLK. Used in conjunction with CE2 and
CE3[2] to select/deselect the device. ADSP is ignored if
CE1 is HIGH.
CE2
97
B2
B3
InputSynchronous
Chip Enable 2 Input, active HIGH. Sampled on the
rising edge of CLK. Used in conjunction with CE1 and
CE3[2] to select/deselect the device.
CE3 [2]
92
–
A6
InputSynchronous
Chip Enable 3 Input, active LOW. Sampled on the
rising edge of CLK. Used in conjunction with CE1 and
CE2 to select/deselect the device. Not connected for
BGA. Where referenced, CE3[2] is assumed active
throughout this document for BGA.
OE
86
F4
B8
InputOutput Enable, asynchronous input, active LOW.
Asynchronous Controls the direction of the I/O pins. When LOW, the
I/O pins behave as outputs. When deasserted HIGH,
DQ pins are three-stated, and act as input data pins. OE
is masked during the first clock of a read cycle when
emerging from a deselected state.
CE1
Document #: 38-05096 Rev. *B
Page 8 of 32
CY7C1366B
CY7C1367B
CY7C1367B–Pin Definitions (continued)
TQFP
BGA
(2-Chip
Enable)
fBGA
I/O
Description
83
G4
A9
InputSynchronous
Advance Input signal, sampled on the rising edge of
CLK, active LOW. When asserted, it automatically
increments the address in a burst cycle.
84
A4
B9
InputSynchronous
Address Strobe from Processor, sampled on the
rising edge of CLK, active LOW. When asserted LOW,
addresses presented to the device are captured in the
address registers. A1: A0 are also loaded into the burst
counter. When ADSP and ADSC are both asserted, only
ADSP is recognized. ASDP is ignored when CE1 is
deasserted HIGH.
ADSC
85
P4
A8
InputSynchronous
Address Strobe from Controller, sampled on the
rising edge of CLK, active LOW. When asserted LOW,
addresses presented to the device are captured in the
address registers. A1: A0 are also loaded into the burst
counter. When ADSP and ADSC are both asserted, only
ADSP is recognized.
ZZ
64
T7
H11
InputZZ “sleep” Input, active HIGH. When asserted HIGH
Asynchronous places the device in a non-time-critical “sleep” condition
with data integrity preserved. For normal operation, this
pin has to be LOW or left floating. ZZ pin has an internal
pull-down.
Name
ADV
ADSP
DQs, DQPs 58,59,62,63,
68,69,72,73,
8,9,12,13,18
,19,22,23,74
,24
P7,K7,G7, J10,K10,L10,
E7,F6,H6,
M10,D11,
L6,N6,D1, E11,F11,G11
H1,L1,N1, ,J1,K1,L1,M1
E2,G2,K2, ,D2,E2,F2,
M2,D6,P2 G2,C11,N1
VDD
15,41,65,91
C4,J2,J4, D4,D8,E4,E8 Power Supply Power supply inputs to the core of the device.
J6,R4
,F4,F8,G4,
G8,H4,H8,J4
,J8,K4,K8,L4
,L8,M4,M8
VSS
17,40,67,90 D3,D5,E5,
E3,F3,F5,
G5,H3,H5,
K3,K5,L3,
M3,M5,N3,
N5,P3,P5
VSSQ
5,10,21,26,
55,60,71,76
Document #: 38-05096 Rev. *B
–
I/OSynchronous
H2,C4,C5,C6
,C7,C8,D5,
D6,D7,E5,E6
,E7,F5,F6,F7
,G5,G6,G7,
H5,H6,H7,J5
,J6,J7,K5,K6,
K7,L5,L6,L7,
M5,M6,M7,
N4,N8
Ground
–
I/O Ground
Bidirectional Data I/O lines. As inputs, they feed into
an on-chip data register that is triggered by the rising
edge of CLK. As outputs, they deliver the data contained
in the memory location specified by the addresses
presented during the previous clock rise of the read
cycle. The direction of the pins is controlled by OE.
When OE is asserted LOW, the pins behave as outputs.
When HIGH, DQs and DQPX are placed in a three-state
condition.
Ground for the core of the device.
Ground for the I/O circuitry.
Page 9 of 32
CY7C1366B
CY7C1367B
CY7C1367B–Pin Definitions (continued)
Name
VDDQ
TQFP
BGA
(2-Chip
Enable)
fBGA
4,11,20,27, A1,A7,F1, C3,C9,D3,
54,61,70,77 F7,J1,J7,
D9,E3,E9,
M1,M7,U1, F3,F9,G3,
U7
G9,J3,J9,K3,
K9,L3,L9,M3,
M9,N3,N9
I/O
I/O Power
Supply
Power supply for the I/O circuitry.
MODE
31
R3
R1
TDO
–
U5
P7
TDI
–
U3
P5
JTAG serial
input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the
rising edge of TCK. If the JTAG feature is not being utilized, this pin can be left floating or connected to VDD
through a pull up resistor. This pin is not available on
TQFP packages.
TMS
–
U2
R5
JTAG serial
input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the
rising edge of TCK. If the JTAG feature is not being utilized, this pin can be disconnected or connected to VDD.
This pin is not available on TQFP packages.
TCK
–
U4
R7
JTAGClock
Clock input to the JTAG circuitry. If the JTAG feature
is not being utilized, this pin must be connected to VSS.
This pin is not available on TQFP packages.
NC
1,2,3,6,7,14,
16,25,28,29,
30,38,39,42,
51,52,53,56,
57,66,75,78,
79,95,96
B1,B7,C1,
C7,D2,D4,
D7,E1,E6,
H2,F2,G1,
G6,H7,J3,
J5,K1,K6,
L4,L2,L7,
M6,N2,L7,
P1,P6,R1,
R5,R7,T1,
T4,U6
A5,B1,B4,C1
,C2,C10,D1,
D10,E1,E10,
F1,F10,G1,
G10,H1,H3,
H9,H10,J2,
J11,K2,K11,
L2,L1,M2,
M11,N2,N10,
N5,N7,N11,
P1,A1,B11,
P2,R2,N6
–
Document #: 38-05096 Rev. *B
InputStatic
Description
JTAG serial
output
Synchronous
Selects Burst Order. When tied to GND selects linear
burst sequence. When tied to VDD or left floating selects
interleaved burst sequence. This is a strap pin and
should remain static during device operation. Mode Pin
has an internal pull-up.
Serial data-out to the JTAG circuit. Delivers data on
the negative edge of TCK. If the JTAG feature is not
being utilized, this pin should be left unconnected. This
pin is not available on TQFP packages.
No Connects. Not internally connected to the die.
Page 10 of 32
CY7C1366B
CY7C1367B
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
The CY7C1366B/CY7C1367B supports secondary cache in
systems utilizing either a linear or interleaved burst sequence.
The interleaved burst order supports Pentium and i486
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is user
selectable, and is determined by sampling the MODE input.
Accesses can be initiated with either the Processor Address
Strobe (ADSP) or the Controller Address Strobe (ADSC).
Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWX) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Synchronous Chip Selects CE1, CE2, CE3[2] and an
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. ADSP is ignored if
CE1 is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
chip selects are all asserted active, and (3) the write signals
(GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1
is HIGH. The address presented to the address inputs is
stored into the address advancement logic and the Address
Register while being presented to the memory core. The corresponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within tco if OE is active LOW. The only exception
occurs when the SRAM is emerging from a deselected state
to a selected state, its outputs are always three-stated during
the first cycle of the access. After the first cycle of the access,
the outputs are controlled by the OE signal. Consecutive
single read cycles are supported.
The CY7C1366B/CY7C1367B is a double-cycle deselect part.
Once the SRAM is deselected at clock rise by the chip select
and either ADSP or ADSC signals, its output will three-state
immediately after the next clock rise.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and (2)
chip select is asserted active. The address presented is
loaded into the address register and the address
advancement logic while being delivered to the memory core.
Document #: 38-05096 Rev. *B
The write signals (GW, BWE, and BWX) and ADV inputs are
ignored during this first cycle.
ADSP triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQx inputs is written into the corresponding address location in the memory core. If GW is HIGH,
then the write operation is controlled by BWE and BWX
signals. The CY7C1366B/CY7C1367B provides byte write
capability that is described in the Write Cycle Description table.
Asserting the Byte Write Enable input (BWE) with the selected
Byte Write input will selectively write to only the desired bytes.
Bytes not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations.
Because the CY7C1366B/CY7C1367B is a common I/O
device, the Output Enable (OE) must be deasserted HIGH
before presenting data to the DQ inputs. Doing so will
three-state the output drivers. As a safety precaution, DQ are
automatically three-stated whenever a write cycle is detected,
regardless of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) chip select is asserted active, and (4)
the appropriate combination of the write inputs (GW, BWE,
and BWX) are asserted active to conduct a write to the desired
byte(s). ADSC triggered write accesses require a single clock
cycle to complete. The address presented is loaded into the
address register and the address advancement logic while
being delivered to the memory core. The ADV input is ignored
during this cycle. If a global write is conducted, the data
presented to the DQX is written into the corresponding address
location in the memory core. If a byte write is conducted, only
the selected bytes are written. Bytes not selected during a byte
write operation will remain unaltered. A synchronous
self-timed write mechanism has been provided to simplify the
write operations.
Because the CY7C1366B/CY7C1367B is a common I/O
device, the Output Enable (OE) must be deasserted HIGH
before presenting data to the DQX inputs. Doing so will
three-state the output drivers. As a safety precaution, DQX are
automatically three-stated whenever a write cycle is detected,
regardless of the state of OE.
Burst Sequences
The CY7C1366B/CY7C1367BCY7C1367B provides a two-bit
wraparound counter, fed by A[1:0], that implements either an
interleaved or linear burst sequence. The interleaved burst
sequence is designed specifically to support Intel® Pentium
applications. The linear burst sequence is designed to support
processors that follow a linear burst sequence. The burst
sequence is user selectable through the MODE input. Both
read and write burst operations are supported.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.
Page 11 of 32
CY7C1366B
CY7C1367B
Interleaved Burst Address Table
(MODE = Floating or VDD)
Linear Burst Address Table (MODE = GND)
First
Address
A1: A0
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Second
Address
A1: A0
Third
Address
A1: A0
Fourth
Address
A1: A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CEs, ADSP, and ADSC must remain
inactive for the duration of tZZREC after the ZZ input returns
LOW.
ZZ Mode Electrical Characteristics
Parameter
First
Address
A1: A0
Description
IDDZZ
Snooze mode standby current
Test Conditions
Min.
ZZ > VDD – 0.2V
tZZS
Device operation to ZZ
ZZ > VDD – 0.2V
tZZREC
ZZ recovery time
ZZ < 0.2V
tZZI
ZZ Active to snooze current
This parameter is sampled
tRZZI
ZZ Inactive to exit snooze current
This parameter is sampled
Max.
Unit
35
mA
2tCYC
ns
2tCYC
ns
2tCYC
0
ns
ns
Truth Table[ 3, 4, 5, 6, 7, 8]
Operation
Add. Used
CE2
None
CE1
H
Deselect Cycle,Power-down
Deselect Cycle,Power-down
X
None
L
L
Deselect Cycle,Power-down
None
L
Deselect Cycle,Power-down
None
L
CE3
WRITE OE CLK
DQ
X
X L-H three-state
X
ZZ
L
ADSP
X
ADSC
L
ADV
X
X
L
L
X
X
X
X
L-H three-state
X
H
L
L
X
X
X
X
L-H three-state
L
X
L
H
L
X
X
X
L-H three-state
L-H three-state
Deselect Cycle,Power-down
None
L
X
H
L
H
L
X
X
X
Snooze Mode,Power-down
None
X
X
X
H
X
X
X
X
X
X
three-state
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L-H three-state
WRITE Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L-H
D
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L-H
Q
READ Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L-H three-state
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
READ Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H three-state
Q
Notes:
3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
4. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW= L. WRITE = H when all Byte write enable signals , BWE, GW = H.
5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. CE1, CE2, and CE3 are available only in the TQFP package. BGA package has only 2 chip selects CE1 and CE2.
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is
a don't care for the remainder of the write cycle
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are three-state when OE
is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
9. Table only lists a partial listing of the byte write combinations. Any Combination of BWX is valid Appropriate write will be done based on which byte write is active.
Document #: 38-05096 Rev. *B
Page 12 of 32
CY7C1366B
CY7C1367B
Truth Table[ 3, 4, 5, 6, 7, 8]
Operation
Add. Used
CE2
CE3
Next
CE1
H
READ Cycle, Continue Burst
X
X
ZZ
L
ADSP
X
ADSC
H
ADV
L
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H three-state
WRITE Cycle,Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
WRITE Cycle,Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H three-state
WRITE OE CLK
H
L
L-H
DQ
Q
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H three-state
Q
WRITE Cycle,Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
WRITE Cycle,Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Partial Truth Table for Read/Write[5, 9]
Function (CY7C1366B)
Read
Read
Write Byte A – ( DQA and DQPA )
Write Byte B – ( DQB and DQPB )
Write Bytes B, A
Write Byte C – ( DQC and DQPC )
Write Bytes C, A
Write Bytes C, B
Write Bytes C, B, A
Write Byte D – ( DQD and DQPD )
Write Bytes D, A
Write Bytes D, B
Write Bytes D, B, A
Write Bytes D, C
Write Bytes D, C, A
Write Bytes D, C, B
Write All Bytes
Write All Bytes
GW
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
BWE
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
BWD
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
X
BWC
X
H
H
H
H
L
L
L
L
H
H
H
H
L
L
L
L
X
BWB
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
X
BWA
X
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
X
Truth Table for Read/Write[5]
Function (CY7C1367B)
Read
Read
Write Byte A – ( DQA and DQPA )
Write Byte B – ( DQB and DQPB )
Write All Bytes
Write All Bytes
Document #: 38-05096 Rev. *B
GW
H
H
H
H
H
L
BWE
H
L
L
L
L
X
BWB
X
H
H
L
L
X
BWA
X
H
L
H
L
X
Page 13 of 32
CY7C1366B
CY7C1367B
IEEE 1149.1 Serial Boundary Scan (JTAG)
Test MODE SELECT (TMS)
The CY7C1366B/CY7C1367B incorporates a serial boundary
scan test access port (TAP). This port operates in accordance
with IEEE Standard 1149.1-1990 but does not have the set of
functions required for full 1149.1 compliance. These functions
from the IEEE specification are excluded because their
inclusion places an added delay in the critical speed path of
the SRAM. Note that the TAP controller functions in a manner
that does not conflict with the operation of other devices using
1149.1 fully compliant TAPs. The TAP operates using
JEDEC-standard 3.3V or 2.5V I/O logic levels.
The CY7C1366B/CY7C1367B contains a TAP controller,
instruction register, boundary scan register, bypass register,
and ID register.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied
LOW(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO
should be left unconnected. Upon power-up, the device will
come up in a reset state which will not interfere with the
operation of the device.
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this ball unconnected if the TAP is not used. The ball is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI ball is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see Figure . TDI
is internally pulled up and can be unconnected if the TAP is
unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See Tap Controller Block
Diagram.)
Test Data-Out (TDO)
The TDO output ball is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine. The output changes on the
falling edge of TCK. TDO is connected to the least significant
bit (LSB) of any register. (See Tap Controller State Diagram.)
TAP Controller Block Diagram
TAP Controller State Diagram
1
0
Bypass Register
TEST-LOGIC
RESET
2 1 0
0
0
RUN-TEST/
IDLE
1
SELECT
DR-SCAN
1
SELECT
IR-SCAN
0
1
1
CAPTURE-DR
0
TDO
x . . . . . 2 1 0
SHIFT-IR
0
Boundary Scan Register
1
EXIT1-DR
1
EXIT1-IR
0
1
TCK
0
PAUSE-DR
0
PAUSE-IR
1
0
TMS
TAP CONTROLLER
1
EXIT2-DR
0
EXIT2-IR
1
Performing a Tap Reset
1
UPDATE-DR
0
UPDATE-IR
1
0
The 0/1 next to each state represents the value of TMS at the
rising edge of TCK.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Document #: 38-05096 Rev. *B
Selection
Circuitry
Identification Register
CAPTURE-IR
1
Instruction Register
31 30 29 . . . 2 1 0
0
SHIFT-DR
1
TDI
Selection
Circuitry
0
0
0
1
A RESET is performed by forcing TMS HIGH (VDD) for five
rising edges of TCK. This RESET does not affect the operation
of the SRAM and may be performed while the SRAM is
operating.
At power-up, the TAP is reset internally to ensure that TDO
comes up in a High-Z state.
Tap Registers
Registers are connected between the TDI and TDO balls and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction register. Data is serially loaded into the TDI ball
on the rising edge of TCK. Data is output on the TDO ball on
the falling edge of TCK.
Page 14 of 32
CY7C1366B
CY7C1367B
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO balls as shown in the Tap Controller Block
Diagram. Upon power-up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
When the TAP controller is in the Capture-IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board-level serial test data path.
Bypass Register
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO balls.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
EXTEST
EXTEST is a mandatory 1149.1 instruction which is to be
executed whenever the instruction register is loaded with all
0s. EXTEST is not implemented in this SRAM TAP controller,
and therefore this device is not compliant to 1149.1. The TAP
controller does recognize an all-0 instruction.
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between the
TDI and TDO balls. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction has been loaded. There is one difference between
the two instructions. Unlike the SAMPLE/PRELOAD
instruction, EXTEST places the SRAM outputs in a High-Z
state.
Boundary Scan Register
IDCODE
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM. The SRAM has a 71-bit-long
register.
The boundary scan register is loaded with the contents of the
RAM I/O ring when the TAP controller is in the Capture-DR
state and is then placed between the TDI and TDO balls when
the controller is moved to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD and SAMPLE Z instructions can be used
to capture the contents of the I/O ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.
Identification (ID) Register
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO balls and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state.
The IDCODE instruction is loaded into the instruction register
upon power-up or whenever the TAP controller is given a test
logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
SAMPLE/PRELOAD
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The
PRELOAD portion of this instruction is not implemented, so
the device TAP controller is not fully 1149.1 compliant.
TAP Instruction Set
The user must be aware that the TAP controller clock can only
operate at a frequency up to 10 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.
Overview
Eight different instructions are possible with the three bit
instruction register. All combinations are listed in the
Instruction Codes table. Three of these instructions are listed
as RESERVED and should not be used. The other five instructions are described in detail below.
The TAP controller used in this SRAM is not fully compliant to
the 1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented.
The TAP controller cannot be used to load address data or
control signals into the SRAM and cannot preload the I/O
buffers. The SRAM does not implement the 1149.1 commands
EXTEST or INTEST or the PRELOAD portion of
SAMPLE/PRELOAD; rather, it performs a capture of the I/O
ring when these instructions are executed.
Document #: 38-05096 Rev. *B
When the SAMPLE/PRELOAD instruction is loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and bidirectional balls
is captured in the boundary scan register.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus
hold time (tCS plus tCH).
The SRAM clock input might not be captured correctly if there
is no way in a design to stop (or slow) the clock during a
SAMPLE/PRELOAD instruction. If this is an issue, it is still
Page 15 of 32
CY7C1366B
CY7C1367B
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
Note that since the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction will have the
same effect as the Pause-DR command.
Document #: 38-05096 Rev. *B
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Page 16 of 32
CY7C1366B
CY7C1367B
TAP Timing
1
2
Test Clock
(TCK)
3
t TH
t TMSS
t TMSH
t TDIS
t TDIH
t
TL
4
5
6
t CYC
Test Mode Select
(TMS)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
TAP AC Switching Characteristics Over the operating Range[10, 11]
Parameter
Symbol
Min
tTCYC
50
Max
Unit
Clock
TCK Clock Cycle Time
ns
TCK Clock Frequency
tTF
TCK Clock HIGH time
tTH
25
20
MHz
ns
TCK Clock LOW time
tTL
25
ns
Output Times
TCK Clock LOW to TDO Valid
tTDOV
TCK Clock LOW to TDO Invalid
tTDOX
0
ns
TMS Set-Up to TCK Clock Rise
tTMSS
5
ns
TDI Set-Up to TCK Clock Rise
tTDIS
5
ns
tCS
5
TMS hold after TCK Clock Rise
tTMSH
5
ns
TDI Hold after Clock Rise
tTDIH
5
ns
tCH
5
ns
5
ns
Setup Times
Capture Set-Up to TCK Rise
Hold Times
Capture Hold after Clock Rise
Notes:
10. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
11. Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 1ns.
Document #: 38-05096 Rev. *B
Page 17 of 32
CY7C1366B
CY7C1367B
3.3V TAP AC Test Conditions
2.5V TAP AC Test Conditions
Input pulse levels ....... ........................................VSS to 3.3V
Input pulse levels ........................................ VSS to 2.5V
Input rise and fall times ...................... ..............................1ns
Input rise and fall time ......................................................1ns
Input timing reference levels ...........................................1.5V
Input timing reference levels................... ......................1.25V
Output reference levels...................................................1.5V
Output reference levels .................. ..............................1.25V
Test load termination supply voltage...............................1.5V
Test load termination supply voltage .................... ........1.25V
3.3V TAP AC Output Load Equivalent
2.5V TAP AC Output Load Equivalent
1.5V
1.25V
50Ω
50Ω
TDO
TDO
Z O= 50Ω
Z O= 50Ω
20pF
20pF
TAP DC Electrical Characteristics And Operating Conditions (0°C < TA < +70°C; VDD = 3.3V ±0.165V unless
otherwise noted)[12]
Parameter
VOH1
VOH2
VOL1
VOL2
VIH
VIL
IX
Description
Conditions
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Max.
Unit
IOH = –4.0 mA
2.4
V
IOH = –1.0 mA
VDDQ = 2.5V
2.0
V
IOH = –100 µA
VDDQ = 3.3V
2.9
V
VDDQ = 2.5V
2.1
V
IOL = 8.0 mA
VDDQ = 3.3V
0.4
V
IOL = 8.0 mA
VDDQ = 2.5V
0.4
V
IOL = 100 µA
VDDQ = 3.3V
0.2
V
VDDQ = 2.5V
0.2
V
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Min.
VDDQ = 3.3V
VDDQ = 3.3V
2.0
VDD + 0.3
V
VDDQ = 2.5V
1.7
VDD + 0.3
V
VDDQ = 3.3V
–0.5
0.7
V
VDDQ = 2.5V
–0.3
0.7
V
–5
5
µA
GND < VIN < VDDQ
Identification Register Definitions
Instruction Field
Revision Number (31:29)
Cy7c1366B
(256K x36)
Cy7c1367B
(512K x18)
001
001
Description
Describes the version number.
Device Depth (28:24)
01010
01010
Reserved for Internal Use
Device Width (23:18)
000000
000000
Defines memory type and architecture
Defines width and density
Cypress Device ID (17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
100110
010110
00000110100
00000110100
1
1
Allows unique identification of SRAM vendor.
Indicates the presence of an ID register.
Note:
12. All voltages referenced to VSS (GND).
Document #: 38-05096 Rev. *B
Page 18 of 32
CY7C1366B
CY7C1367B
Scan Register Sizes
Register Name
Bit Size (x36)
Bit Size (x18)
3
3
Instruction
Bypass
1
1
ID
32
32
Boundary Scan Order
71
71
Identification Codes
INSTRUCTION
CODE
DESCRIPTION
EXTEST
000
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state. This instruction is not 1149.1-compliant.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
SAMPLE Z
010
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation. This instruction does not implement 1149.1 preload
function and is therefore not 1149.1-compliant.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
119-Ball BGA Boundary Scan Order
CY7C1366B (256K x 36)
BALL
ID
Signal
Name
BIT#
CLK
2
K4
H4
3
M4
BIT#
1
CY7C1367B (512K x 18)
BALL ID
Signal
Name
BIT#
BALL ID
Signal
Name
BIT#
BALL ID
Signal
Name
37
P4
A0
1
CLK
37
P4
A0
2
K4
H4
GW
38
N4
A1
BWE
39
R6
A
GW
38
N4
A1
3
M4
BWE
39
R6
A
4
F4
OE
40
T5
A
4
F4
OE
40
T5
A
5
B4
ADSC
41
T3
A
5
B4
ADSC
41
T3
A
6
A4
ADSP
42
R2
A
6
A4
ADSP
42
R2
A
7
G4
ADV
43
R3
MODE
7
G4
ADV
43
R3
MODE
8
C3
A
44
P2
DQPD
8
C3
A
44
Internal
Internal
9
B3
A
45
P1
DQD
9
B3
A
45
Internal
Internal
10
D6
DQPB
46
L2
DQD
10
T2
A
46
Internal
Internal
11
H7
DQB
47
K1
DQD
11
Internal
Internal
47
Internal
Internal
12
G6
DQB
48
N2
DQD
12
Internal
Internal
48
P2
DQPB
13
E6
DQB
49
N1
DQD
13
Internal
Internal
49
N1
DQB
14
D7
DQB
50
M2
DQD
14
D6
DQPA
50
M2
DQB
15
E7
DQB
51
L1
DQD
15
E7
DQA
51
L1
DQB
16
F6
DQB
52
K2
DQD
16
F6
DQA
52
K2
DQB
17
G7
DQB
53
Internal
Internal
17
G7
DQA
53
Internal
Internal
18
H6
DQB
54
H1
DQC
18
H6
DQA
54
H1
DQB
Document #: 38-05096 Rev. *B
Page 19 of 32
CY7C1366B
CY7C1367B
119-Ball BGA Boundary Scan Order (continued)
CY7C1366B (256K x 36)
BIT#
BALL
ID
Signal
Name
BIT#
19
T7
ZZ
20
K7
21
CY7C1367B (512K x 18)
BALL ID
Signal
Name
BIT#
BALL ID
Signal
Name
BIT#
BALL ID
Signal
Name
55
G2
DQC
19
T7
ZZ
55
G2
DQB
DQA
56
E2
DQC
20
K7
DQA
56
E2
DQB
L6
DQA
57
D1
DQC
21
L6
DQA
57
D1
DQB
22
N6
DQA
58
H2
DQC
22
N6
DQA
58
Internal
Internal
23
P7
DQA
59
G1
DQC
23
P7
DQA
59
Internal
Internal
24
N7
DQA
60
F2
DQC
24
Internal
Internal
60
Internal
Internal
25
M6
DQA
61
E1
DQC
25
Internal
Internal
61
Internal
Internal
26
L7
DQA
62
D2
DQPC
26
Internal
Internal
62
Internal
Internal
27
K6
DQA
63
C2
A
27
Internal
Internal
63
C2
A
28
P6
DQPA
64
A2
A
28
Internal
Internal
64
A2
A
29
T4
A
65
E4
CE1
29
T6
A
65
E4
CE1
30
A3
A
66
B2
CE2
30
A3
A
66
B2
CE2
31
C5
A
67
L3
BWD
31
C5
A
67
Internal
Internal
32
B5
A
68
G3
BWC
32
B5
A
68
Internal
Internal
33
A5
A
69
G5
BWB
33
A5
A
69
G3
BWB
34
C6
A
70
L5
BWA
34
C6
A
70
L5
BWA
71
Internal
Internal
35
A6
A
71
Internal
Internal
36
B6
A
35
A6
A
36
B6
A
165-Ball fBGA Boundary Scan Order
CY7C1366B (256K x 36)
CY7C1367B (512K x 18)
BIT#
BALL ID
Signal
Name
BIT#
BALL ID
Signal
Name
BIT#
BALL ID
Signal
Name
BIT#
BALL ID
Signal
Name
1
B6
CLK
37
R6
A0
1
B6
CLK
37
R6
A0
2
B7
GW
38
P6
A1
2
B7
GW
38
P6
A1
3
A7
BWE
39
R4
A
3
A7
BWE
39
R4
A
4
B8
OE
40
P4
A
4
B8
OE
40
P4
A
5
A8
ADSC
41
R3
A
5
A8
ADSC
41
R3
A
6
B9
ADSP
42
P3
A
6
B9
ADSP
42
P3
A
7
A9
ADV
43
R1
MODE
7
A9
ADV
43
R1
MODE
8
B10
A
44
N1
DQPD
8
B10
A
44
Internal
Internal
9
A10
A
45
L2
DQD
9
A10
A
45
Internal
Internal
10
C11
DQPB
46
K2
DQD
10
A11
A
46
Internal
Internal
11
E10
DQB
47
J2
DQD
11
Internal
Internal
47
Internal
Internal
12
F10
DQB
48
M2
DQD
12
Internal
Internal
48
N1
DQPB
13
G10
DQB
49
M1
DQD
13
Internal
Internal
49
M1
DQB
14
D10
DQB
50
L1
DQD
14
C11
DQPA
50
L1
DQB
15
D11
DQB
51
K1
DQD
15
D11
DQA
51
K1
DQB
16
E11
DQB
52
J1
DQD
16
E11
DQA
52
J1
DQB
17
F11
DQB
53
Internal
Internal
17
F11
DQA
53
Internal
Internal
Document #: 38-05096 Rev. *B
Page 20 of 32
CY7C1366B
CY7C1367B
165-Ball fBGA Boundary Scan Order (continued)
CY7C1366B (256K x 36)
BIT#
BALL ID
Signal
Name
18
G11
19
H11
20
21
22
23
24
25
26
27
28
N11
DQPA
64
29
R11
A
65
30
R10
A
66
31
P10
A
67
32
R9
A
33
P9
A
34
R8
35
P8
36
P11
A
CY7C1367B (512K x 18)
Signal
Name
BIT#
BALL ID
Signal
Name
Signal
Name
BIT#
BALL ID
DQB
54
G2
DQC
18
G11
ZZ
55
F2
DQC
19
H11
J10
DQA
56
E2
DQC
20
K10
DQA
57
D2
DQC
21
L10
DQA
58
G1
DQC
22
M10
DQA
59
F1
DQC
23
J11
DQA
60
E1
DQC
24
K11
DQA
61
D1
DQC
25
L11
DQA
62
C1
DQPC
26
Internal
M11
DQA
63
B2
A
27
Internal
A2
A
28
Internal
A3
CE1
29
R11
B3
CE2
30
R10
A
66
B3
CE2
B4
BWD
31
P10
A
67
Internal
Internal
68
A4
BWC
32
R9
A
68
Internal
Internal
69
A5
BWB
33
P9
A
69
A4
BWB
A
70
B5
BWA
34
R8
A
70
B5
BWA
A
71
A6
CE3
35
P8
A
71
A6
CE3
36
P11
A
Document #: 38-05096 Rev. *B
BIT#
BALL ID
DQA
54
G2
DQB
ZZ
55
F2
DQB
J10
DQA
56
E2
DQB
K10
DQA
57
D2
DQB
L10
DQA
58
Internal
Internal
M10
DQA
59
Internal
Internal
Internal
Internal
60
Internal
Internal
Internal
Internal
61
Internal
Internal
Internal
62
Internal
Internal
Internal
63
B2
A
Internal
64
A2
A
A
65
A3
CE1
Page 21 of 32
CY7C1366B
CY7C1367B
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
(Above which the useful life may be impaired. For user guidelines, not tested.)
Latch-up Current..................................................... >200 mA
Storage Temperature ................................. –65°C to +150°C
Operating Range
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Ambient
Range
Temperature
VDD
VDDQ
Commercial 0°C to +70°C 3.3V – 5%/+10% 2.5V – 5%
to VDD
Industrial
-40°C to +85°C
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
DC Voltage Applied to Outputs
in three-state ....................................... –0.5V to VDDQ + 0.5V
DC Input Voltage....................................–0.5V to VDD + 0.5V
Electrical Characteristics Over the Operating Range
Parameter
Description
VDD
Power Supply Voltage
VDDQ
I/O Supply Voltage
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage[13]
VIL
Input LOW Voltage[13]
IX
Input Load Current except ZZ and MODE
[13, 14]
Test Conditions
Min.
3.135
3.6
V
3.135
VDD
V
VDDQ = 2.5V
2.375
2.625
V
VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA
2.4
VDDQ = 2.5V, VDD = Min., IOH= –1.0 mA
2.0
VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA
V
V
0.4
V
0.4
V
2.0
VDD + 0.3V
V
VDDQ = 2.5V
1.7
VDD + 0.3V
V
VDDQ = 3.3V
–0.3
0.8
V
VDDQ = 2.5V
–0.3
0.7
V
–5
5
µA
VDDQ = 3.3V
GND ≤ VI ≤ VDDQ
Input Current of MODE Input = VSS
µA
–30
Input = VDD
5
Input = VSS
µA
µA
–5
30
µA
5
µA
4.4-ns cycle, 225 MHz
250
mA
5-ns cycle, 200 MHz
220
mA
6-ns cycle, 166 MHz
180
mA
All speeds
50
mA
All speeds
30
mA
VDD = Max, Device Deselected, or All speeds
Automatic CE
Power-down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V
Current—CMOS Inputs f = fMAX = 1/tCYC
Automatic CE
VDD = Max, Device Deselected,
All Speeds
Power-down
VIN ≥ VIH or VIN ≤ VIL, f = 0
Current—TTL Inputs
50
mA
40
mA
Input = VDD
IOZ
Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled
IDD
VDD Operating Supply
Current
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
ISB1
Automatic CE
Power-down
Current—TTL Inputs
VDD = Max, Device Deselected,
VIN ≥ VIH or VIN ≤ VIL
f = fMAX = 1/tCYC
ISB2
Automatic CE
VDD = Max, Device Deselected,
Power-down
VIN ≤ 0.3V or VIN > VDDQ – 0.3V,
Current—CMOS Inputs f = 0
ISB3
ISB4
Unit
VDDQ = 3.3V
VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA
Input Current of ZZ
Max.
–5
Shaded areas contain advance information.
Notes:
13. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > -2V (Pulse width less than tCYC/2).
14. TPower-up: Assumes a linear ramp from 0v to VDD(min.) within 200ms. During this time VIH < VDD and VDDQ < VDD\
Document #: 38-05096 Rev. *B
Page 22 of 32
CY7C1366B
CY7C1367B
Thermal Resistance[15]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard
test methods and procedures
for measuring thermal
impedence, per EIA / JESD51.
TQFP
Package
BGA
Package
fBGA
Package
Unit
25
25
27
°C/W
9
6
6
°C/W
fBGA
Package
Unit
Capacitance[15]
Parameter
Description
Test Conditions
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CI/O
Input/Output Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V.
VDDQ = 2.5V
TQFP
Package
BGA
Package
5
5
5
pF
5
5
5
pF
5
7
7
pF
AC Test Loads and Waveforms
3.3V I/O Test Load
R = 317Ω
3.3V
OUTPUT
OUTPUT
RL = 50Ω
Z0 = 50Ω
GND
5 pF
R = 351Ω
2.5V I/O Test Load
INCLUDING
JIG AND
SCOPE
OUTPUT
RL = 50Ω
Z0 = 50Ω
ALL INPUT PULSES
GND
R =1538Ω
VL = 1.25V
(a)
INCLUDING
JIG AND
SCOPE
≤ 1ns
(c)
VDD
5 pF
90%
10%
90%
(b)
R = 1667Ω
2.5V
OUTPUT
10%
≤ 1ns
VL = 1.5V
(a)
ALL INPUT PULSES
VDD
(b)
10%
90%
10%
90%
≤ 1ns
≤ 1ns
(c)
Note:
15. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05096 Rev. *B
Page 23 of 32
CY7C1366B
CY7C1367B
Switching Characteristics Over the Operating Range[20, 21]
225 MHz
Parameter
tPOWER
Description
VDD(Typical) to the first Access[16]
Min.
Max
200 MHz
Min.
Max
166 MHz
Min.
Max
Unit
1
1
1
ms
Clock
tCYC
Clock Cycle Time
4.4
5.0
6.0
ns
tCH
Clock HIGH
1.8
2.0
2.4
ns
tCL
Clock LOW
1.8
2.0
2.4
ns
Output Times
tCO
Data Output Valid After CLK Rise
2.8
3.0
3.5
ns
tDOH
Data Output Hold After CLK Rise
1.25
1.25
1.25
ns
tCLZ
Clock to Low-Z[17, 18, 19]
1.25
1.25
1.25
ns
tCHZ
High-Z[17, 18, 19]
1.25
tOEV
tOELZ
tOEHZ
Clock to
OE LOW to Output Valid
OE LOW to Output Low-Z[17, 18, 19]
2.8
1.25
2.8
0
[17, 18, 19]
1.25
3.0
0
2.8
OE HIGH to Output High-Z
3.0
3.5
ns
3.5
ns
3.5
ns
0
3.0
ns
Set-up Times
tAS
Address Set-up Before CLK Rise
1.4
1.5
1.5
ns
tADS
ADSC, ADSP Set-up Before CLK Rise
1.4
1.5
1.5
ns
1.5
1.5
ns
tWES
ADV Set-up Before CLK Rise
GW, BWE, BWX Set-up Before CLK Rise
1.4
1.4
1.5
1.5
ns
tDS
Data Input Set-up Before CLK Rise
1.4
1.5
1.5
ns
tCES
Chip Enable Set-Up Before CLK Rise
1.4
1.5
1.5
ns
Address Hold After CLK Rise
0.4
0.5
0.5
ns
0.5
0.5
ns
0.4
0.5
0.5
ns
tWEH
ADSP , ADSC Hold After CLK Rise
ADV Hold After CLK Rise
GW,BWE, BWX Hold After CLK Rise
0.4
0.4
0.5
0.5
ns
tDH
Data Input Hold After CLK Rise
0.4
0.5
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.4
0.5
0.5
ns
tADVS
Hold Times
tAH
tADH
tADVH
Shaded areas contain advance information.
Notes:
16. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD( minimum) initially before a read or write operation
can be initiated.
17. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
18. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions
19. This parameter is sampled and not 100% tested.
20. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V.
21. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05096 Rev. *B
Page 24 of 32
CY7C1366B
CY7C1367B
Switching Waveforms
Read Cycle Timing[22]
tCYC
CLK
tCH
tADS
tCL
tADH
ADSP
tADS
tADH
ADSC
tAS
ADDRESS
tAH
A1
A2
tWES
A3
Burst continued with
new base address
tWEH
GW, BWE,BW
X
Deselect
cycle
tCES tCEH
CE
tADVS tADVH
ADV
ADV suspends burst
OE
t
Data Out (DQ)
High-Z
CLZ
t OEHZ
Q(A1)
tOEV
tCO
t OELZ
tDOH
Q(A2)
t CHZ
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A3)
t CO
Single READ
BURST READ
DON’T CARE
Burst wraps around
to its initial state
UNDEFINED
Notes:
22. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document #: 38-05096 Rev. *B
Page 25 of 32
CY7C1366B
CY7C1367B
Switching Waveforms (continued)
Write Cycle Timing[22, 23]
t CYC
CLK
tCH
tADS
tCL
tADH
ADSP
tADS
ADSC extends burst
tADH
tADS
tADH
ADSC
tAS
tAH
A1
ADDRESS
A2
A3
Byte write signals are ignored for first cycle when
ADSP initiates burst
tWES tWEH
BWE,
BWX
tWES tWEH
GW
tCES
tCEH
CE
tADVS tADVH
ADV
ADV suspends burst
OE
t
DS
Data in (D)
High-Z
t
OEHZ
t
DH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE
DON’T CARE
Extended BURST WRITE
UNDEFINED
Note:
23. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW.
Document #: 38-05096 Rev. *B
Page 26 of 32
CY7C1366B
CY7C1367B
Switching Waveforms (continued)
Read/Write Cycle Timing[22, 24, 25]
tCYC
CLK
tCL
tCH
tADS
tADH
tAS
tAH
ADSP
ADSC
ADDRESS
A1
A2
A3
A4
A5
A6
D(A5)
D(A6)
tWES tWEH
BWE, BWX
tCES
tCEH
CE
ADV
OE
tDS
tCO
Data In (D)
tOELZ
High-Z
tCLZ
Data Out (Q)
tDH
High-Z
Q(A1)
Back-to-Back READs
tOEHZ
D(A3)
Q(A2)
Q(A4)
Q(A4+2)
BURST READ
Single WRITE
DON’T CARE
Q(A4+1)
Q(A4+3)
Back-to-Back
WRITEs
UNDEFINED
Notes:
24. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC.
25. GW is HIGH.
Document #: 38-05096 Rev. *B
Page 27 of 32
CY7C1366B
CY7C1367B
Switching Waveforms (continued)
ZZ Mode Timing [26, 27]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Outputs (Q)
High-Z
DON’T CARE
Ordering Information
Speed
(MHz)
225
Ordering Code
CY7C1366B-225AC
CY7C1367B-225AC
Package
Name
A101
Part and Package Type
100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
3 Chip Enables
CY7C1366B-225AI
CY7C1367B-225AI
CY7C1366B-225BGC
Operating
Range
Commercial
Industrial
BG119
CY7C1367B-225BGC
119-ball (14 x 22 x 2.4 mm) BGA 2 Chip Enables with Commercial
JTAG
CY7C1366B-225BGI
Industrial
CY7C1367B-225BGI
CY7C1366B-225BZC
BB165A
CY7C1367B-225BZC
165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) Commercial
3 Chip Enables with JTAG
CY7C1366B-225BZI
Industrial
CY7C1367B-225BZI
200
CY7C1366B-200AC
CY7C1367B-200AC
A101
100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
3 Chip Enables
CY7C1366B-200AI
CY7C1367B-200AI
CY7C1366B-200BGC
Commercial
Industrial
BG119
CY7C1367B-200BGC
119-ball (14 x 22 x 2.4 mm) BGA 2 Chip Enables with Commercial
JTAG
CY7C1366B-200BGI
Industrial
CY7C1367B-200BGI
CY7C1366B-200BZC
CY7C1367B-200BZC
BB165A
165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) Commercial
3 Chip Enables with JTAG
CY7C1366B-200BZI
Industrial
CY7C1367B-200BZI
Notes:
26. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device.
27. DQs are in high-Z when exiting ZZ sleep mode.
Document #: 38-05096 Rev. *B
Page 28 of 32
CY7C1366B
CY7C1367B
Ordering Information (continued)
Speed
(MHz)
Package
Name
Ordering Code
166
CY7C1366B-166AC
A101
CY7C1367B-166AC
Operating
Range
Part and Package Type
100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm)
3 Chip Enables
Commercial
CY7C1366B-166AI
Industrial
CY7C1367B-166AI
CY7C1366B-166BGC
BG119
CY7C1367B-166BGC
119-ball (14 x 22 x 2.4 mm) BGA 2 Chip Enables with
JTAG
CY7C1366B-166BG
Commercial
Industrial
ICY7C1367B-166BGI
CY7C1366B-166BZC
BB165A
CY7C1367B-166BGC
165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm)
3 Chip Enables with JTAG
CY7C1366B-166BZI
Commercial
Industrial
CY7C1367B-166BGI
Shaded areas contain advance information. Please contact your local sales representative for availability of these parts.
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101
DIMENSIONS ARE IN MILLIMETERS.
16.00±0.20
1.40±0.05
14.00±0.10
100
81
80
1
20.00±0.10
22.00±0.20
0.30±0.08
0.65
TYP.
30
SEE DETAIL
50
0.20 MAX.
1.60 MAX.
STAND-OFF
0.05 MIN.
0.15 MAX.
0.25
GAUGE PLANE
0.10
0° MIN.
0°-7°
A
51
31
R 0.08 MIN.
0.20 MAX.
12°±1°
(8X)
SEATING PLANE
R 0.08 MIN.
0.20 MAX.
0.60±0.15
0.20 MIN.
1.00 REF.
DETAIL
Document #: 38-05096 Rev. *B
A
51-85050-*A
Page 29 of 32
CY7C1366B
CY7C1367B
Package Diagrams (continued)
119-Lead PBGA (14 x 22 x 2.4 mm) BG119
51-85115-*B
Document #: 38-05096 Rev. *B
Page 30 of 32
CY7C1366B
CY7C1367B
Package Diagrams (continued)
165-Ball FBGA (13 x 15 x 1.2 mm) BB165A
51-85122-*C
i486 is a trademark, and Intel and Pentium are registered trademarks of Intel Corporation. PowerPC is a trademark of IBM
Corporation. All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05096 Rev. *B
Page 31 of 32
© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C1366B
CY7C1367B
Document History Page
Document Title: CY7C1366B/CY7C1367B 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
Document Number: 38-05096
REV.
ECN NO.
Issue Date
Orig. of
Change
Description of Change
**
117903
08/28/02
RCS
New Data Sheet
*A
121066
11/13/02
DSG
Updated package drawings 51-85115 (BG 119) to *B and 51-85122
(BB165A) to *C.
*B
206401
See ECN
NJY
Removed Preliminary Status(All Pages).
Updated Pin Definitions.
Removed 250MHz Speed bin and added 225 MHz speed bin.
Added JTAG boundary scan orders.
Added BGA and fBGA packages to the capacitance table.
Document #: 38-05096 Rev. *B
Page 32 of 32
Similar pages