Siemens BUP313D Igbt with antiparallel diode (low forward voltage drop high switching speed low tail current latch-up free) Datasheet

BUP 313D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 2
Pin 1
G
Type
VCE
IC
BUP 313D
1200V 32A
Pin 3
C
E
Package
Ordering Code
TO-218 AB
Q67040-A4228-A2
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
1200
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
32
TC = 90 °C
20
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
64
TC = 90 °C
40
IF
Diode forward current
TC = 90 °C
18
Pulsed diode current, tp = 1 ms
IFpuls
TC = 25 °C
108
Ptot
Power dissipation
TC = 25 °C
W
200
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Semiconductor Group
Unit
1
°C
Dec-02-1996
BUP 313D
Maximum Ratings
Parameter
Symbol
DIN humidity category, DIN 40 040
-
IEC climatic category, DIN IEC 68-1
-
Values
Unit
E
-
55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
RthJC
≤ 0.63
Diode thermal resistance, chip case
RthJCD
≤ 1.25
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 0.35 mA, Tj = 25 °C
V
4.5
5.5
6.5
VGE = 15 V, IC = 15 A, Tj = 25 °C
-
2.7
3.2
VGE = 15 V, IC = 15 A, Tj = 125 °C
-
3.3
3.9
VGE = 15 V, IC = 30 A, Tj = 25 °C
-
3.4
-
VGE = 15 V, IC = 30 A, Tj = 125 °C
-
4.3
-
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
mA
-
-
0.4
IGES
VGE = 25 V, VCE = 0 V
nA
-
-
100
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 15 A
Input capacitance
-
pF
-
1000
1350
-
150
225
-
70
100
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
12
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Dec-02-1996
BUP 313D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 82 Ω
Rise time
-
70
100
-
45
70
-
400
530
-
70
95
tr
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 82 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 82 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 82 Ω
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 15 A, VGE = 0 V, Tj = 25 °C
-
2.2
2.8
IF = 15 A, VGE = 0 V, Tj = 125 °C
-
1.7
-
Reverse recovery time
trr
ns
IF = 15 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
-
-
-
Tj = 125 °C
-
100
150
Reverse recovery charge
Qrr
µC
IF = 15 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
-
1
1.8
Tj = 125 °C
-
3
5.4
Semiconductor Group
3
Dec-02-1996
BUP 313D
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
32
220
W
A
Ptot
180
IC
160
140
24
20
120
16
100
12
80
60
8
40
4
20
0
0
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
TC
160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 2
IGBT
10 0
t = 9.0µs
p
10 µs
A
K/W
IC
ZthJC
10 1
10 -1
100 µs
D = 0.50
0.20
1 ms
10 0
10 -2
0.10
0.05
0.02
single pulse
10 ms
0.01
DC
10 -1
0
10
10
1
10
2
10
3
10 -3
-5
10
V
VCE
Semiconductor Group
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
Dec-02-1996
BUP 313D
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
30
30
A
A
26
IC
24
22
20
26
17V
15V
13V
11V
9V
7V
IC
24
22
20
18
18
16
16
14
14
12
12
10
10
8
8
6
6
4
4
2
0
2
0
0
1
2
3
V
5
0
VCE
17V
15V
13V
11V
9V
7V
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
30
A
26
IC
24
22
20
18
16
14
12
10
8
6
4
2
0
0
2
4
Semiconductor Group
6
8
10
V
14
VGE
5
Dec-02-1996
BUP 313D
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω
par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A
10 3
10 3
t
tdoff
t
ns
tdoff
ns
tdon
tr
10 2
10 2
tr
tdon
tf
tf
10 1
0
5
10
15
20
25
30
A
IC
10 1
0
40
50
100
150
Ω
200
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω
E
par.: VCE = 600V, VGE = ± 15 V, IC = 15 A
10
10
mWs
mWs
8
E
7
8
7
Eon
6
6
5
5
4
4
3
300
RG
Eon
3
Eoff
2
2
1
1
0
Eoff
0
0
5
10
Semiconductor Group
15
20
25
30
A
IC
40
0
6
50
100
150
200
Ω
300
RG
Dec-02-1996
BUP 313D
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 15 A
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
20
V
nF
VGE
16
C
600 V
14
800 V
10 0
Ciss
12
10
8
Coss
10 -1
6
Crss
4
2
0
0
10
20
30
40
50
60
70
80
100
10 -2
0
5
10
15
20
25
30
V
40
VCE
Q Gate
Short circuit safe operating area
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH
ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = 15 V
10
2.5
I Csc/I C(90°C)
ICpuls /IC
6
1.5
4
1.0
2
0.5
0
0.0
0
200
400
Semiconductor Group
600
800
1000 1200
V
1600
VCE
7
0
200
400
600
800
1000 1200
V
1600
VCE
Dec-02-1996
BUP 313D
Typ. forward characteristics
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IF = f (VF)
parameter: Tj
Diode
10 1
30
A
K/W
26
IF
24
ZthJC
10 0
22
20
18
Tj=125°C
16
Tj=25°C
10 -1
14
D = 0.50
12
0.20
0.10
10
0.05
10 -2
8
0.02
6
0.01
4
single pulse
2
0
0.0
0.5
1.0
1.5
2.0
V
3.0
VF
Semiconductor Group
10 -3
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
8
Dec-02-1996
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