Rohm DTB114TK -500ma / -40v digital transistor (with built-in resistor) Datasheet

DTB114TK
Transistors
-500mA / -40V Digital transistor
(with built-in resistor)
DTB114TK
zExternal dimensions (Unit : mm)
zApplications
Inverter, interface, driver
SMT3
2.9
1.1
0.4
zFeatures
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors.
2) The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing
of the input, and parasitic effects are almost
completely eliminated.
3) Only the on / off conditions need to be set for
operation, making the device design easy.
4) Higher mounting densities can be achieved.
1.6
2.8
(3)
(2)
0.15
(1)Emitter
1.9
0.3Min.
(1)
0.95 0.95
(2)Base
Each lead has same dimension
(3)Collector
Abbreviated symbol : F94
zStructure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
zCircuit schematic
C
B
zPackaging specifications
Part No.
0.8
R1
Package
SMT3
Packaging type
Taping
Code
T146
Basic ordering unit (pieces)
3000
E
E : Emitter
C : Collector
B : Base
R1=10kΩ
DTB114TK
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−40
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−500
mA
Collector power dissipation
PC
200
mW
Parameter
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
Rev.B
1/2
DTB114TK
Transistors
zExternal characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
−50
−
−
V
IC= −50µA
Collector-emitter breakdown voltage
BVCEO
−40
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −50µA
Collector cutoff current
ICBO
−
−
−0.5
µA
VCB= −50V
Emitter cutoff curren
IEBO
−
−
−0.5
µA
VEB= −4V
VCE(sat)
−
−
−0.3
V
IC/IB= −50mA/−2.5mA
DC current transfer ratio
hFE
100
250
600
−
IC= −50mA , VCE= −5V
Input resistance
R1
7
10
13
kΩ
Transition frequency
fT ∗
−
200
−
MHz
Collector-emitter saturation voltage
Conditions
−
VCE= −10V , IE=50mA , f=100MHz
∗ Characteristics of built-in transistor
1k
VCE=5V
Ta=25°C
DC CURRENT GAIN : hFE
500
Ta=100°C
200
Ta= −40°C
100
50
20
10
5
2
1
500µ 1m
2m
5m
10m 20m
50m 100m 200m 500m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. Collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristics curves
1
IC/IB=20/1
500m
200m
Ta=100°C
Ta=25°C
100m
50m
Ta= −40°C
20m
10m
5m
2m
1m
500µ 1m
2m
5m
10m 20m
50m 100m 200m 500m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
vs. Collector current
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Similar pages