Excelics EFA040A-70 Low distortion gaas power fet Datasheet

Excelics
EFA040A-70
DATA SHEET
Low Distortion GaAs Power FET
44
19
4
20
S
S
70
D
40
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+22.0dBm TYPICAL OUTPUT POWER
8.0dB TYPICAL POWER GAIN AT 12GHz
0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
180 Min.
(All Leads)
•
•
•
•
•
•
G
All Dimensions In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
P1dB
G1dB
PAE
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
f=12GHz
f=18GHz
MIN
TYP
20.0
22.0
22.0
8.0
5.0
6.5
f=12GHz
MAX
UNIT
dBm
dB
%
33
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
60
105
Gm
Transconductance
Vds=3V, Vgs=0V
45
60
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0 mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
-10
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-6
-14
V
Rth
Thermal Resistance
-2.0
160
mS
-3.5
250*
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
mA
CONTINUOUS2
Drain-Source Voltage
10V
6V
Vds
Gate-Source Voltage
-6V
-4V
Vgs
Drain Current
Idss
75mA
Ids
Forward Gate Current
10mA
1.5mA
Igsf
Input Power
21dBm
@ 3dB Compression
Pin
Channel Temperature
175oC
150 oC
Tch
Storage Temperature
-65/175oC
-65/150 oC
Tstg
Total Power Dissipation
550mW
445mW
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
V
o
C/W
EFA040A-70
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
FREQ
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
--- S11 --MAG ANG
0.971 -30.2
0.908 -59.1
0.842 -84.8
0.782 -109.8
0.726 -133.4
0.686 -152.0
0.652 -172.6
0.626 167.7
0.631 140.1
0.652 117.8
0.659 103.2
0.681
86.0
0.739
69.3
0.776
55.3
0.787
41.1
0.798
25.7
0.789
15.5
0.803
7.3
0.821
-7.7
0.846 -19.7
0.829 -28.2
0.795 -39.9
0.808 -56.6
0.819 -69.7
0.756 -84.3
0.754 -103.8
6V, 1/2 Idss
--- S21 ----- S12 --MAG ANG
MAG ANG
4.747 154.4
0.021
72.3
4.348 130.0
0.037
55.5
3.860 108.4
0.047
42.9
3.516
88.8
0.052
33.0
3.212
70.4
0.055
24.9
2.939
53.7
0.055
20.6
2.687
37.1
0.055
16.8
2.492
21.4
0.054
16.2
2.292
4.2
0.057
17.8
2.096 -12.5
0.063
14.5
2.002 -28.6
0.073
9.8
1.899 -45.5
0.083
2.8
1.706 -61.4
0.088
-6.5
1.513 -76.5
0.091 -16.1
1.400 -94.1
0.095 -29.4
1.269 -113.2
0.094 -44.6
1.103 -126.3
0.092 -50.4
1.043 -138.6
0.101 -67.9
0.928 -155.5
0.085 -83.5
0.854 -171.7
0.080 -98.6
0.801 173.6
0.076 -113.9
0.760 160.1
0.076 -129.4
0.695 142.7
0.075 -147.4
0.633 124.1
0.078 -168.0
0.617 107.6
0.089 176.3
0.634
90.8
0.117 161.8
--- S22 --MAG
ANG
0.714
-14.0
0.681
-29.1
0.651
-42.1
0.626
-52.4
0.592
-62.1
0.558
-74.9
0.543
-86.4
0.517
-96.6
0.511 -104.6
0.497 -118.4
0.485 -137.9
0.480 -157.0
0.463 -173.7
0.465
168.8
0.498
144.8
0.518
120.3
0.516
105.9
0.574
93.1
0.604
75.9
0.657
59.9
0.654
47.1
0.650
38.6
0.629
20.9
0.617
0.1
0.618
-14.7
0.599
-30.8
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