Intersil EL7156CSZ-T13 High performance pin driver Datasheet

EL7156
Data Sheet
September 1, 2015
FN7280.4
High Performance Pin Driver
Features
The EL7156 high performance pin driver with three-state is
suited to many ATE and level-shifting applications. The 3.5A
peak drive capability makes this part an excellent choice
when driving high capacitance loads.
• Clocking speeds up to 40MHz
The output pin OUT is connected to input pins VH or VL
respectively, depending on the status of the IN pin. When the
OE pin is active low, the output is placed in the three-state
mode. The isolation of the output FETs from the power
supplies enables VH and VL to be set independently,
enabling level-shifting to be implemented. Related to the
EL7155, the EL7156 adds a lower supply pin VS- and makes
VL an isolated and independent input. This feature adds
applications flexibility and improves switching response due
to the increased enhancement of the output FETs.
This pin driver has improved performance over existing pin
drivers. It is specifically designed to operate at voltages
down to 0V across the switch elements while maintaining
good speed and ON-resistance characteristics.
Available in the 8 Ld SOIC and 8 Ld PDIP packages, the
EL7156 is specified for operation over the full -40°C to
+85°C temperature range.
• 15ns tR/tFat 2000pF CLOAD
• 0.5ns rise and fall times mismatch
• 0.5ns tON-tOFF prop delay mismatch
• 3.5pF typical input capacitance
• 3.5A peak drive
• Low ON-resistance of 3.5Ω
• High capacitive drive capability
• Operates from 4.5V to 16.5V
• Pb-free plus anneal available (RoHS compliant)
Applications
• ATE/burn-in testers
• Level shifting
• IGBT drivers
• CCD drivers
Pinout
EL7156
(8 LD PDIP, SOIC)
TOP VIEW
VS+ 1
OE 2
IN 3
8 VH
L
O
G
I
C
7 OUT
6 VL
GND 4
5 VS-
Ordering Information
PART NUMBER
PART MARKING TAPE & REEL
PKG
PKG. DWG. #
EL7156CNZ (Note)
(No longer available, recommended replacement: EL7156CSZ)
EL7156CN Z
-
8 Ld PDIP* (Pb-free) MDP0031
EL7156CSZ (Note)
7156CSZ
-
8 Ld SOIC (Pb-free)
MDP0027
EL7156CSZ-T7 (Note)
7156CSZ
7”
8 Ld SOIC (Pb-free)
MDP0027
EL7156CSZ-T13 (Note)
7156CSZ
13”
8 Ld SOIC (Pb-free)
MDP0027
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
*Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas LLC
Copyright Intersil Americas LLC 2003, 2005, 2007, 2015. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
EL7156
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage (VS+ to VS-) . . . . . . . . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.3V, VS +0.3V
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +125°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
*Pb-free PDIPs can be used for through hole wave solder
processing only. They are not intended for use in Reflow solder
processing applications.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER
VS+ = +15V, VH = +15V, VL = 0V, VS- = 0V, TA = +25°C, unless otherwise specified.
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT
VIH
Logic ‘1’ Input Voltage
IIH
Logic ‘1’ Input Current
VIL
Logic ‘0’ Input Voltage
IIL
Logic ‘0’ Input Current
CIN
Input Capacitance
3.5
pF
RIN
Input Resistance
50
MΩ
2.4
VIH = VS+
V
0.1
VIL = 0V
0.1
10
µA
0.8
V
10
µA
OUTPUT
ROVH
ON-Resistance VH to OUT
IOUT = -200 mA
2.7
4.5
Ω
ROVL
ON-Resistance VL to OUT
IOUT = +200 mA
3.5
5.5
Ω
IOUT
Output Leakage Current
OE = 0V, OUT = VH/VL
0.1
10
µA
IPK
Peak Output Current
(linear resistive operation)
Source
3.5
A
Sink
3.5
A
Continuous Output Current
Source/Sink
IS
Power Supply Current
Inputs = VS+
1.3
3
mA
IVH
Off Leakage at VH and VL
VH, VL = 0V
4
10
µA
IDC
200
mA
POWER SUPPLY
SWITCHING CHARACTERISTICS
tR
Rise Time
CL = 2000pF
14.5
ns
tF
Fall Time
CL = 2000pF
15
ns
tRFΔ
tR, tF Mismatch
CL = 2000pF
0.5
ns
td-1
Turn-Off Delay Time
CL = 2000pF
9.5
ns
td-2
Turn-On Delay Time
CL = 2000pF
10
ns
tdΔ
td-1-td-2 Mismatch
CL = 2000pF
0.5
ns
td-3
Three-state Delay Enable
10
ns
td-4
Three-state Delay Disable
10
ns
2
FN7280.4
September 1, 2015
EL7156
Electrical Specifications
PARAMETER
VS+ = +5V, VH = +5V, VL = -5V, VS- = -5V, TA = +25°C, unless otherwise specified. (Continued)
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
INPUT
VIH
Logic ‘1’ Input Voltage
IIH
Logic ‘1’ Input Current
VIL
Logic ‘0’ Input Voltage
IIL
Logic ‘0’ Input Current
CIN
Input Capacitance
3.5
pF
RIN
Input Resistance
50
MΩ
2.0
VIH = VS+
V
0.1
VIL = 0V
0.1
10
µA
0.8
V
10
µA
OUTPUT
ROVH
ON-Resistance VH to OUT
IOUT = -200mA
3.4
5
Ω
ROVL
ON-Resistance VL to OUT
IOUT = +200mA
4
6
Ω
IOUT
Output Leakage Current
OE = 0V, OUT = VH/VL
0.1
10
µA
IPK
Peak Output Current
(linear resistive operation)
Source
3.5
A
Sink
3.5
A
Continuous Output Current
Source/Sink
IS
Power Supply Current
Inputs = VS+
1
2.5
mA
VH
Off Leakage at VH and VL
VH, VL = 0V
4
10
µA
IDC
200
mA
POWER SUPPLY
SWITCHING CHARACTERISTICS
tR
Rise Time
CL = 2000pF
17
ns
tF
Fall Time
CL = 2000pF
17
ns
tRFΔ
tR, tF Mismatch
CL = 2000pF
0
ns
td-1
Turn-Off Delay Time
CL = 2000pF
11.5
ns
td-2
Turn-On Delay Time
CL = 2000pF
12
ns
tdΔ
td-1-td-2 Mismatch
CL = 2000pF
0.5
ns
td-3
Three-state Delay Enable
10
ns
td-4
Three-state Delay Disable
10
ns
3
FN7280.4
September 1, 2015
EL7156
Typical Performance Curves
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
T = +25°C
MAX TJ = +125°C
1.0
PDIP8
HIGH THRESHOLD
θJA = 100°C/W
0.8
0.6
INPUT VOLTAGE (V)
POWER DISSIPATION (W)
1.8
SOIC8
0.4
θJA = 160°C/W
1.6
HYSTERESIS
1.4
1.2
LOW THRESHOLD
0.2
0
1.0
0
25
50
75
85 100
125
150
5
10
AMBIENT TEMPERATURE (°C)
FIGURE 1. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
T = +25°C
6
IOUT = 200mA, T = +25°C, VS+ = VH, VS- = VL = 0V
VOUT - VL
5
1.6
1.2
FIGURE 2. INPUT THRESHOLD vs SUPPLY VOLTAGE
“ON” RESISTANCE (Ω)
SUPPLY CURRENT (mA)
2.0
ALL INPUTS = GND
0.8
0.4
4
VOUT - VH
3
2
1
ALL INPUTS = VS+
0
0
10
5
5
15
7.5
10
12.5
15
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
FIGURE 4. “ON”-RESISTANCE vs SUPPLY VOLTAGE
FIGURE 3. QUIESCENT SUPPLY CURRENT vs SUPPLY
VOLTAGE
30
15
SUPPLY VOLTAGE (V)
CL = 2000pF, T = +25°C
20
CL = 2000pF, VS+ = 15V
RISE/FALL TIME (ns)
RISE/FALL TIME (ns)
18
25
tR
20
tI
tF
15
tR
10
5
10
15
SUPPLY VOLTAGE (V)
FIGURE 5. RISE/FALL TIME vs SUPPLY VOLTAGE
4
tF
16
14
tR
12
10
-50
0
50
100
150
TEMPERATURE (°C)
FIGURE 6. RISE/FALL TIME vs TEMPERATURE
FN7280.4
September 1, 2015
EL7156
Typical Performance Curves
CL = 2000pF, T = +25°C
14
DELAY TIME (ns)
15
13
td-1
11
td-1
8
6
-50
15
10
td-2
10
9
5
CL = 2000pF, VS+ = 15V
12
td-2
DELAY TIME (ns)
17
(Continued)
-25
0
VS+ = +15V, T = +25°C
5
50
40
tF
20
tR
0
100
1000
3
2
1
0
100
10000
1000
10000
LOAD CAPACITANCE (pF)
FIGURE 9. RISE/FALL TIME vs LOAD CAPACITANCE
FIGURE 10. SUPPLY CURRENT vs LOAD CAPACITANCE
VS+ = VH, VS -= VL = 0V, CL = 0pF
30
12
VS+ = VH, VS- = VL = 0V, CL = 0pF
25
10
VS+ = VH = 15V
VS+ = VH = 10V
8
6
20
IVH (mA)
SUPPLY CURRENT (mA)
125
VS+ = VH = 15V, VS- = VL = 0V, T = +25°C, f = 20kHz
LOAD CAPACITANCE (pF)
14
100
4
SUPPLY CURRENT (mA)
RISE/FALL TIME (ns)
60
10
75
FIGURE 8. PROPAGATION DELAY vs TEMPERATURE
FIGURE 7. PROPAGATION DELAY vs SUPPLY VOLTAGE
30
50
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
70
25
VS+ = VH = 15V
VS+ = VH = 10V
15
10
4
5
2
0
1M
VS+ =VS
V+=VH
H = 5V
2M
3M
4M
6M
6M
7M
8M
9M
10M
FREQUENCY (Hz)
FIGURE 11. SUPPLY CURRENT vs FREQUENCY
5
0
1M
VS+ =VVSH+=VH
= 5V
2M
3M
4M
6M
6M
7M
8M
9M
10M
FREQUENCY (Hz)
FIGURE 12. VH SUPPLY CURRENT vs FREQUENCY
FN7280.4
September 1, 2015
EL7156
Truth Table
Operating Voltage Range
OE
IN
OUT
PIN
MIN
MAX
0
0
Three-state
VS- to GND
-5
0
0
1
Three-state
VS+ to VS-
5
16.5
1
0
VH
VH to VL
0
16.5
1
1
VL
VS+ to VH
0
16.5
VS+ to GND
5
16.5
VL to VS-
0
16.5
Three-state Output
VL
VH
Timing Diagram
5V
INPUT 2.5V
0
INVERTED
OUTPUT
90%
10%
td2
td1
tF
tR
Standard Test Configuration
VH
0.1µF
VS+
VS+
4.7µF
10kΩ
1
0.1µF
2
OE
IN
3
GND
4
4.7µF
8
OUT
L
O
G
I
C
7
2000pF
6
5
0.1µF
VL
4.7µF
EL7156
0.1µF
6
VS-
4.7µF
FN7280.4
September 1, 2015
EL7156
Pin Descriptions
PIN
NAME
FUNCTION
1
VS+
Positive Supply Voltage
2
OE
Output Enable
EQUIVALENT CIRCUIT
VS+
INPUT
VSCIRCUIT 1
3
IN
Input
4
GND
Ground
5
VS-
Negative Supply Voltage
6
VL
Lower Output Voltage
7
OUT
Reference Circuit 1
Output
VH
VSVS+
VOUT
VSVSVL
CIRCUIT 2
8
VH
High Output Voltage
Block Diagram
VH
OE
VS+
IN
LEVEL
SHIFTER
GND
THREESTATE
CONTROL
OUT
VSVL
7
FN7280.4
September 1, 2015
EL7156
Applications Information
Power dissipation may be calculated:
Product Description
PD = ( V S × I S ) + ( C VS × V S × f ) + [ ( C INT + C L ) × V OUT × f ]
2
The EL7156 is a high performance 40MHz pin driver. It
contains two analog switches connecting VH and VL to OUT.
Depending on the value of the IN pin, one of the two
switches will be closed and the other switch open. An output
enable (OE) is also supplied which opens both switches
simultaneously.
Due to the topology of the EL7156, both the VH and VL pins
can be connected to any voltage between the VS+ and VSpins, but VH must be greater than VL in order to prevent
turning on the body diode at the output stage.
The EL7156 is available in both the 8 Ld SOIC and the 8 Ld
PDIP packages. The relevant package should be chosen
depending on the calculated power dissipation.
Three-state Operation
When the OE pin is low, the output is three-state (floating).
The output voltage is the parasitic capacitance’s voltage. It
can be any voltage between VH and VL, depending on the
previous state. At three-state, the output voltage can be
pushed to any voltage between VH and VL. The output
voltage can’t be pushed higher than VH or lower than VL
since the body diode at the output stage will turn on.
Supply Voltage Range and Input Compatibility
The EL7156 is designed for operation on supplies from 5V to
15V (4.5V to 16.5V maximum). “Operating Voltage Range”
on page 6 shows the specifications for the relationship
between the VS+, VS-, VH, VL, and GND pins.
All input pins are compatible with both 3V and 5V CMOS
signals. With a positive supply (VS+) of 5V, the EL7156 is
also compatible with TTL inputs.
Power Supply Bypassing
When using the EL7156, it is very important to use adequate
power supply bypassing. The high switching currents
developed by the EL7156 necessitate the use of a bypass
capacitor between the supplies (VS+ and VS-) and GND
pins. It is recommended that a 2.2µF tantalum capacitor be
used in parallel with a 0.1µF low-inductance ceramic MLC
capacitor. These should be placed as close to the supply
pins as possible. It is also recommended that the VH and VL
pins have some level of bypassing, especially if the EL7156
is driving highly capacitive loads.
Power Dissipation Calculation
When switching at high speeds, or driving heavy loads, the
EL7156 drive capability is limited by the rise in die
temperature brought about by internal power dissipation. For
reliable operation, die temperature must be kept below
TJMAX (+125°C). It is necessary to calculate the power
dissipation for a given application prior to selecting the
package type.
8
2
(EQ. 1)
where:
VS is the total power supply to the EL7156 (from VS+ to
GND)
VOUT is the swing on the output (VH to VL)
CVS is the integral capacitance due to VS+
CINT is the integral load capacitance due to VH
IS is the quiescent supply current (3mA max)
f is frequency
TABLE 1. INTEGRAL CAPACITANCE
VS+ = VH(V)
CVS(pF)
CINT(pF)
5
80
120
10
85
145
15
90
180
Having obtained the application’s power dissipation, a
maximum package thermal coefficient may be determined,
to maintain the internal die temperature below TJMAX:
T JMAX – T MAX
θ JA = ----------------------------------------PD
(EQ. 2)
where:
TJMAX is the maximum junction temperature (+125°C)
TMAX is the maximum operating temperature
PD is the power dissipation calculated above
θJA thermal resistance on junction to ambient
θJA is 160°C/W for the SOIC8 package and 100°C/W for the
PDIP8 package when using a standard JEDEC JESD51-3
single-layer test board. If TJMAX is greater than +125°C
when calculated using Equation 2, then one of the following
actions must be taken:
Reduce θJA the system by designing more heat-sinking
into the PCB (as compared to the standard JEDEC
JESD51-3).
Use the PDIP8 instead of the SOIC8 package.
De-rate the application either by reducing the switching
frequency, the capacitive load, or the maximum operating
(ambient) temperature (TMAX).
FN7280.4
September 1, 2015
EL7156
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that
you have the latest revision.
DATE
REVISION
September 1, 2015
FN7280.4
CHANGE
Updated Ordering Information Table on page 1.
Added Revision History and About Intersil sections.
About Intersil
Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products
address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets.
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product
information page found at www.intersil.com.
You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask.
Reliability reports are also available from our website at www.intersil.com/support
9
FN7280.4
September 1, 2015
EL7156
Plastic Dual-In-Line Packages (PDIP)
E
D
A2
SEATING
PLANE
L
N
A
PIN #1
INDEX
E1
c
e
b
A1
NOTE 5
1
eA
eB
2
N/2
b2
MDP0031
PLASTIC DUAL-IN-LINE PACKAGE
INCHES
SYMBOL
PDIP8
PDIP14
PDIP16
PDIP18
PDIP20
TOLERANCE
A
0.210
0.210
0.210
0.210
0.210
MAX
A1
0.015
0.015
0.015
0.015
0.015
MIN
A2
0.130
0.130
0.130
0.130
0.130
±0.005
b
0.018
0.018
0.018
0.018
0.018
±0.002
b2
0.060
0.060
0.060
0.060
0.060
+0.010/-0.015
c
0.010
0.010
0.010
0.010
0.010
+0.004/-0.002
D
0.375
0.750
0.750
0.890
1.020
±0.010
E
0.310
0.310
0.310
0.310
0.310
+0.015/-0.010
E1
0.250
0.250
0.250
0.250
0.250
±0.005
e
0.100
0.100
0.100
0.100
0.100
Basic
eA
0.300
0.300
0.300
0.300
0.300
Basic
eB
0.345
0.345
0.345
0.345
0.345
±0.025
L
0.125
0.125
0.125
0.125
0.125
±0.010
N
8
14
16
18
20
Reference
NOTES
1
2
Rev. C 2/07
NOTES:
1. Plastic or metal protrusions of 0.010” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions E and eA are measured with the leads constrained perpendicular to the seating plane.
4. Dimension eB is measured with the lead tips unconstrained.
5. 8 and 16 lead packages have half end-leads as shown.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9001 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
10
FN7280.4
September 1, 2015
EL7156
Small Outline Package Family (SO)
A
D
h X 45°
(N/2)+1
N
A
PIN #1
I.D. MARK
E1
E
c
SEE DETAIL “X”
1
(N/2)
B
L1
0.010 M C A B
e
H
C
A2
GAUGE
PLANE
SEATING
PLANE
A1
0.004 C
0.010 M C A B
L
b
0.010
4° ±4°
DETAIL X
MDP0027
SMALL OUTLINE PACKAGE FAMILY (SO)
INCHES
SYMBOL
SO-14
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28)
TOLERANCE
NOTES
A
0.068
0.068
0.068
0.104
0.104
0.104
0.104
MAX
-
A1
0.006
0.006
0.006
0.007
0.007
0.007
0.007
±0.003
-
A2
0.057
0.057
0.057
0.092
0.092
0.092
0.092
±0.002
-
b
0.017
0.017
0.017
0.017
0.017
0.017
0.017
±0.003
-
c
0.009
0.009
0.009
0.011
0.011
0.011
0.011
±0.001
-
D
0.193
0.341
0.390
0.406
0.504
0.606
0.704
±0.004
1, 3
E
0.236
0.236
0.236
0.406
0.406
0.406
0.406
±0.008
-
E1
0.154
0.154
0.154
0.295
0.295
0.295
0.295
±0.004
2, 3
e
0.050
0.050
0.050
0.050
0.050
0.050
0.050
Basic
-
L
0.025
0.025
0.025
0.030
0.030
0.030
0.030
±0.009
-
L1
0.041
0.041
0.041
0.056
0.056
0.056
0.056
Basic
-
h
0.013
0.013
0.013
0.020
0.020
0.020
0.020
Reference
-
16
20
24
28
Reference
-
N
SO-8
SO16
(0.150”)
8
14
16
Rev. M 2/07
NOTES:
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
11
FN7280.4
September 1, 2015
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