TLP512 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP512 Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Transistor Inverter Unit: mm The TLP512 consists of a GaAℓAs high-output light emitting diode and a high-speed detector that contains a PN photodiode and an amplifier transistor into a single chip. • Isolation voltage: 2500 Vrms (min) • Switching speed: tpHL = 0.8 μs, tpLH = 0.8 μs (max) @RL = 1.9 kΩ • TTL compatible • UL recognized: UL1577, file No. E67349 JEDEC ― JEITA ― TOSHIBA 11-7A8 Weight: 0.4 g (typ.) Pin Configuration (top view) Schematic IF 1: Anode 1 6 2: Cathode 2 5 3 4 ICC 1 VF 3: NC 2 4: Emitter (GND) 5: Collector (OUT) 6: VCC 1 6 VCC 5 VO 4 GND IO 2007-10-01 TLP512 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit (Note 1) IF 25 mA Pulse forward current (Note 2) IFP 50 mA Peak transient forward current (Note 3) IFPT 1 A VR 5 V (Note 4) PD 45 mW Output current IO 8 mA Peak output current IOP 16 mA Output voltage VO −0.5 to 15 V Supply voltage VCC −0.5 to 15 V Po 100 mW Operating temperature range Topr −55 to 100 °C Storage temperature range Tstg −55 to 125 °C LED DC forward current DC reverse voltage Detector Diode power dissipation Output power dissipation (Note 5) Soldering temperature (10 s) (Note 6) Tsol 260 °C Isolation voltage (R.H. ≤ 60%, AC 1 min) (Note 7) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Decreases at the rate of 0.8 mA/°C with the ambient temperature of 70°C or higher. Note 2: Duty cycle of 50%, pulse width of 1 ms. Decreases at the rate of 1.6 mA/°C with the ambient temperature of 70°C or higher. Note 3: Pulse width ≤ 1 μs, 300 pps Note 4: Decreases at the rate of 0.9 mW/°C with the ambient temperature of 70°C or higher. Note 5: Decreases at the rate of 2 mW/°C with the ambient temperature of 70°C or higher. Note 6: Soldering is performed 2 mm from the bottom of the package. Note 7: Device considered a two-terminal device: pins 1, 2, and 3 shorted together and pins 4, 5 and 6 shorted together. 2 2007-10-01 TLP512 Electrical Characteristics (Ta = 25°C) Characteristic Detector LED Forward voltage Forward voltage temperature coefficient Symbol Test Condition Min Typ. Max Unit VF IF = 16 mA ⎯ 1.65 1.85 V ΔVF/ΔTa IF = 16 mA ⎯ −2 ⎯ mV/°C Reverse current IR VR = 5 V ⎯ ⎯ 10 μA Pin-to-pin capacitance CT VF = 0, f = 1 MHz ⎯ 4.5 ⎯ pF IOH (1) IF = 0 mA, VCC = VO = 5.5 V ⎯ 3 500 nA IOH (2) IF = 0 mA, VCC = VO = 15 V ⎯ ⎯ 5 IOH IF = 0 mA, VCC = VO = 15 V Ta = 70°C ⎯ ⎯ 50 ICCH IF = 0 mA, VCC = 15 V ⎯ 0.01 1 μA Min Typ. Max Unit IF = 16 mA, VCC = 4.5 V VO = 0.4 V 20 40 ⎯ IF = 16 mA, VCC = 4.5 V VO = 0.4 V, Ta = 0 to 70°C 15 ⎯ ⎯ IF = 16 mA, VCC = 4.5 V IO = 2.4 mA ⎯ ⎯ 0.4 V Min Typ. Max Unit 0.8 ⎯ pF ⎯ Ω High-level output current High-level supply current μA Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Low-level output voltage Symbol IO/IF VOL Test Condition % Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz R.H. ≤ 60%, VS = 500 V BVS ⎯ 10 (Note 7) 5 × 10 10 14 2500 ⎯ ⎯ AC 1 s, in oil ⎯ 5000 ⎯ DC 1 min, in oil ⎯ 5000 ⎯ AC 1 min Isolation voltage (Note 7) 3 Vrms Vdc 2007-10-01 TLP512 Switching Characteristics (Ta = 25°C) Characteristics Test Circuit Symbol Propagation delay time (H → L) tpHL Propagation delay time (L → H) tpLH Common mode transient immunity at logic high output (Note 8) CMH Common mode transient immunity at logic low output (Note 8) CML 1 Test Condition Min Typ. Max Unit IF = 0 → 16 mA, RL = 1.9 kΩ ⎯ ⎯ 0.8 μs IF = 16 → 0 mA, RL = 1.9 kΩ ⎯ ⎯ 0.8 μs IF = 0 mA, VCM = 200 VP−P RL = 1.9 kΩ ⎯ 1500 ⎯ V/μs IF = 16 mA, VCM = 200 VP−P RL = 1.9 kΩ ⎯ −1500 ⎯ V/μs 2 Note 8: Common mode transient immunity in logic high level is the maximum tolerable (positive) dVCM/dt on the leading edge of the common mode pulse, VCM, to assure that the output will remain in a logic high state (VOUT > 2.0 V). Common mode transient immunity in logic low level is the maximum tolerable (negative) dVCM/dt on the trailing edge of the common mode pulse, VCM, to assure that the output will remain in a logic low state (VOUT < 0.8 V). Note 9: Electrostatic discharge immunity (pin to pin): 100 V (max) (C ≤ 200 pF, R = 0) Test Circuit 1: Switching Time Test Circuit IF IF 100 Ω Pulse input 1 PW = 100 μs Duty ratio = 1/10 IF monitor 2 VCC = 5 V 0 VO Output monitor VO 6 RL 5 3 4 5V 1.5 V tpHL 1.5 V VOL tpLH Test Circuit 2: Common Mode Noise Immunity Test Circuit IF 90% 1 VCC = 5 V 6 VCM 100 Ω RL 2 5 3 4 10% 0V VO tr Output monitor VO (IF = 0 mA) tf 5V 2V VCM Pulse generator ZO = 50 Ω 200 V VO (IF = 16 mA) 0.8 V VOL 160 (V) 160 (V) , CML = CMH = t f (μs) tr (μs) 4 2007-10-01 TLP512 ΔVF/ΔTa – IF IF – V F −2.6 100 Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) Ta = 25°C (mA) 10 Forward current IF 30 3 1 0.3 0.1 0.03 0.01 1.0 1.2 1.4 1.6 Forward voltage VF 1.8 −2.4 −2.2 −2.0 −1.8 −1.6 −1.4 0.1 2.0 0.3 (V) 1 Forward current IF IOH (1) – Ta 30 (mA) 10 3 (mA) 100 VCC = 5 V VO = 0.4 V Ta = 25°C 1 IO 30 Output current IOH (μA) 10 IO – IF 300 High-level output current 3 10 3 0.3 0.1 0.03 1 0.6 0 40 80 120 0.01 0.1 160 0.3 Ambient temperature Ta (℃) 1 3 10 Forward current IF IO/IF – IF 30 100 (mA) IO/IF – Ta 100 1.2 VO = 0.4 V 1.0 30 Ta = −25ºC Normalized IO/IF Current transfer ratio IO/IF (%) VCC = 5 V 25ºC 10 100ºC 0.8 0.6 0.4 3 Normalized to: IF = 16 mA VCC = 4.5 V VO = 0.4 V Ta = 25°C 0.2 1 0.1 0.3 1 3 Forward current IF 10 0 −40 30 (mA) −20 0 20 40 Ambient temperature 60 80 100 Ta (℃) *: The above graphs show typical characteristics. 5 2007-10-01 TLP512 IO – V O VO – IF 5 IF = 20 mA Output voltage VO Output current RL 4 (V) 8 IO (mA) IF = 25 mA VCC = 5 V IF IF = 30 mA 10 6 IF = 15 mA 4 IF = 10 mA 3 RL = 2 kΩ 2 Ta = 25°C 3.9 kΩ 10 kΩ 1 IF = 5 mA 2 VO VCC = 5 V Ta = 25°C 01 0 1 2 3 4 Output voltage VO 5 6 0 0 7 (V) 4 8 12 Forward current IF 16 20 24 (mA) Propagation delay time tpLH, tpHL (μs) tpHL, tpLH – RL IF = 16 mA 3 VCC = 5 V Ta = 25°C tpLH 1 0.5 0.3 tpHL 0.1 1 3 10 Load resistance RL 30 100 (kΩ) *: The above graphs show typical characteristics. 6 2007-10-01 TLP512 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01