Central CMSSH-3E Enhanced specification surface mount silicon schottky diode Datasheet

CMSSH-3E
CMSSH-3AE
CMSSH-3CE
CMSSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSSH-3E
Series types are Enhanced Versions of the
CMSSH-3 Series of Silicon Schottky Diodes in an
SOT-323 Surface Mount Package.
FEATURED ENHANCED SPECIFICATIONS:
♦ IF from 100mA max to 200mA MAX
SOT-323 CASE
CMSSH-3E:
CMSSH-3AE:
CMSSH-3CE:
CMSSH-3SE:
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MAXIMUM RATINGS: (TA=25°C)
♦Peak Repetitive Reverse Voltage
♦Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
♦
♦
BVR from 30V min to 40V MIN
VF from 1.0V max to 0.8V MAX
MARKING
MARKING
MARKING
MARKING
CODE:
CODE:
CODE:
CODE:
31E
3AE
3CE
3SE
SYMBOL
UNITS
VRRM
IF
40
V
200
mA
IFRM
IFSM
350
mA
750
mA
PD
TJ, Tstg
250
mW
-65 to +150
°C
ΘJA
500
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=25V
90
500
nA
IR
VR=25V, TA=100°C
IR=100µA
25
100
μA
♦BVR
VF
40
50
V
IF=2.0mA
0.29
0.33
V
IF=15mA
0.37
0.42
V
IF=100mA
0.61
0.80
V
IF=200mA
0.65
1.0
V
CT
VR=1.0V, f=1.0MHz
7.0
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
♦VF
♦VF
♦♦VF
pF
5.0
ns
♦ Enhanced specification
♦♦ Additional Enhanced specification
R2 (9-February 2010)
CMSSH-3E
CMSSH-3AE
CMSSH-3CE
CMSSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-323 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
CMSSH-3E
CMSSH-3AE
CMSSH-3CE
CMSSH-3SE
LEAD CODE:
1) Anode
2) NC
3) Cathode
LEAD CODE:
1) Cathode D2
2) Cathode D1
3) Anode D1, D2
LEAD CODE:
1) Anode D2
2) Anode D1
3) Cathode D1, D2
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODE: 31E
MARKING CODE: 3AE
MARKING CODE: 3CE
MARKING CODE: 3SE
R2 (9-February 2010)
w w w. c e n t r a l s e m i . c o m
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