TOSHIBA 2SK3797

2SK3797
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3797
Switching Regulator Applications
•
•
•
•
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)
High forward transfer admittance: |Yfs| = 7.5 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
13
Pulse (t = 1 ms)
(Note 1)
IDP
52
Drain power dissipation (Tc = 25°C)
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
1033
mJ
Avalanche current
IAR
13
A
Repetitive avalanche energy (Note 3)
EAR
5.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
DC
Drain current
A
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.5
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω
1
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2005-01-24
2SK3797
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Typ.
Max
Unit
±10
µA
VGS = ±25 V, VDS = 0 V
⎯
⎯
V (BR) GSS
IG = ±10 µA, VDS = 0 V
±30
⎯
⎯
V
IDSS
VDS = 600 V, VGS = 0 V
⎯
⎯
100
µA
⎯
⎯
V
Drain cutoff current
Drain-source breakdown voltage
Min
IGSS
Gate leakage current
Gate-source breakdown voltage
Test Condition
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 6.5 A
⎯
0.32
0.43
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, ID = 7.0 A
2.1
7.5
⎯
S
⎯
3100
⎯
⎯
20
⎯
⎯
270
⎯
VOUT
⎯
60
⎯
RL =
30Ω
⎯
110
⎯
⎯
50
⎯
⎯
215
⎯
⎯
62
⎯
⎯
40
⎯
⎯
22
⎯
Gate threshold voltage
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
Turn-on time
ton
50 Ω
Switching time
Fall time
ID = 6.5 A
10 V
VGS
0V
tf
Turn-off time
VDD ∼
− 200 V
Duty <
= 1%, tw = 10 µs
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD ∼
− 400 V, VGS = 10 V, ID = 13 A
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDR
⎯
⎯
⎯
13
A
⎯
⎯
⎯
52
A
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
⎯
⎯
−1.7
V
Reverse recovery time
trr
IDR = 13 A, VGS = 0 V,
⎯
1050
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/µs
⎯
15
⎯
µC
Pulse drain reverse current
(Note 1)
IDRP
Marking
K3797
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2005-01-24
2SK3797
ID – VDS
ID – VDS
14
DRAIN CURRENT ID (A)
7V
8V
6.6V
10
DRAIN CURRENT ID (A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
10V
12
30
6.2V
8
5.8V
6
5.4V
4
5V
2
25
2
6
4
8
DRAIN−SOURCE VOLTAGE
VDS
Tc = 25°C
PULSE TEST
7V
20
6.6V
15
6.2V
10
5.8V
5.4V
5
5V
VGS = 4V
0
0
COMMON SOURCE
8V
10V
0
0
10
VGS = 4 V
5
15
10
DRAIN−SOURCE VOLTAGE
(V)
ID – VGS
VDS
(V)
VDS – VGS
COMMON SOURCE
COMMON SOURCE
VDS = 20 V
DRAIN−SOURCE VOLTAGE
VDS (V)
DRAIN CURRENT ID (A)
30
10
30
25
25
20
PULSE TEST
20
15
Tc = 100°C
Tc = 25°C
10
5
Tc = 25℃
8
PULSE TEST
6
ID = 13 A
4
ID = 6.5 A
2
ID = 3 A
Tc = −55°C
0
0
2
4
6
8
GATE−SOURCE VOLTAGE
VGS
0
0
10
4
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc = −55°C
0.1
0.1
16
VGS
20
(V)
RDS (ON) – ID
1
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
FORWARD TRANSIENT ADMITTANCE
⎪Yfs⎪ (S)
⎪Yfs⎪ – ID
100
12
GATE−SOURCE VOLTAGE
(V)
100
10
8
25
10
DRAIN CURRENT ID
100
(A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
VGS = 10 V
0.3
VGS = 15 V
0.1
0.1
1
10
DRAIN CURRENT ID
3
100
(A)
2005-01-24
2SK3797
RDS (ON) – Tc
IDR – VDS
100
0.8
COMMON SOURCE
COMMON SOURCE
VGS = 10 V
PULSE TEST
Tc = 25°C
0.6
DRAIN REVERSE CURRENT
IDR (A)
DRAIN−SOURCE ON RESISTANCE
RDS (ON) ( Ω)
1
ID = 13A
6.5
0.4
3
0.2
0
−80
−40
0
40
80
CASE TEMPERATURE
120
Tc
PULSE TEST
10
1
5
3
0.1
0
160
10
−0.2
VGS = 0, −1 V
1
−0.4
−0.6
−0.8
DRAIN−SOURCE VOLTAGE
(°C)
Capacitance – VDS
−1
VDS
−1.2
(V)
Vth – Tc
5
10000
1000
Coss
100
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Crss
10 Tc = 25°C
0.1
1
10
DRAIN−SOURCE VOLTAGE
3
2
COMMON SOURCE
1
(V)
ID = 1 mA
−40
0
40
80
CASE TEMPERATURE
120
Tc
160
(°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
PD – Tc
80
20
500
DRAIN−SOURCE VOLTAGE
VDS (V)
DRAIN POWER DISSIPATION
PD (W)
VDS = 10 V
PULSE TEST
0
−80
100
VDS
4
60
40
20
400
16
VDS
VDD = 100 V
300
12
200V
8
400V
200
COMMON SOURCE
VGS
ID = 13 A
100
4
Tc = 25°C
PULSE TEST
0
0
40
80
CASE TEMPERATURE
120
Tc
0
0
160
(°C)
20
40
TOTAL GATE CHARGE
4
80
60
Qg
GATE−SOURCE VOLTAGE VGS (V)
CAPACITANCE C
(pF)
GATE THRESHOLD VOLTAGE
Vth (V)
Ciss
0
100
(nC)
2005-01-24
2SK3797
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
0.01
SINGLE PULSE
T
Duty = t/T
Rth (ch-c) = 2.5°C/W
0.001
10μ
1ｍ
100μ
100ｍ
10ｍ
PULSE WIDTH
tw
(s)
SAFE OPERATING AREA
100
EAS – Tch
1200
AVALANCHE ENERGY EAS (mJ)
ID max (PULSED) *
100 µs *
ID max (CONTINOUS)
DRAIN CURRENT ID (A)
10
1
10
1 ms *
1
DC OPERATION
Tc = 25°C
*SINGLE NONREPETITIVE
0.1
PULSE
CURVES MUST BE
10
600
400
200
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
DERATED LINEARLY WITH
0.01
1
800
0
25
Tc = 25°C
INCREASE IN TEMPERATURE
1000
VDSS max
100
DRAIN−SOURCE VOLTAGE VDS
15 V
1000
(V)
BVDSS
IAR
−15 V
VDD
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 10.7mH
5
VDS
WAVEFORM
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
DD ⎠
⎝ VDSS
2005-01-24
2SK3797
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
6
2005-01-24