Central CTLT953-M833 Surface mount high current pnp silicon transistor Datasheet

CTLT953-M833
SURFACE MOUNT
HIGH CURRENT
PNP SILICON TRANSISTOR
TLM833 CASE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT953-M833 is
a high performance 5.0A High Current PNP Transistor
designed for applications where small size and
operational efficiency are prime requirements. With a
maximum power dissipation of 4.5W, and a very small
package footprint, this device is 80% smaller than a
comparible SOT-223 device. This leadless package
design has a watts per unit area at least twice that of
equivalent package devices.
MARKING CODE: CHA4
• NPN Complement: CTLT853-M833
FEATURES:
• High Voltage (140V)
• High Thermal Efficiency
• High Current (IC=5.0A) • 3 x 3mm TLM™ case
• Low VCE(SAT) = 420mV MAX @ 4.0A
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
Thermal Resistance (Note 3)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
ΘJA
ΘJA
ΘJA
140
100
6.0
5.0
4.5
4.0
2.5
-65 to +150
27.78
31.25
50.00
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=100V
ICBO
VCB=100V, TA=100°C
ICER
VCE=100V, RBE≤1.0kΩ
IEBO
VEB=6.0V
BVCBO
IC=100μA
140
170
BVCER
IC=10mA, RBE≤1.0kΩ
140
150
BVCEO
IC=10mA
100
120
BVEBO
IE=100μA
6.0
9.0
VCE(SAT)
IC=100mA, IB=10mA
20
VCE(SAT)
IC=1.0A, IB=100mA
90
VCE(SAT)
IC=2.0A, IB=200mA
170
VCE(SAT)
IC=4.0A, IB=400mA
320
VBE(SAT)
IC=4.0A, IB=400mA
1.0
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 75 mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 75 mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 25 mm2
MAX
50
1.0
50
10
50
120
220
420
1.2
UNITS
V
V
V
A
W
W
W
°C
°C/W
°C/W
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
mV
mV
mV
mV
V
R1 (17-February 2010)
CTLT953-M833
SURFACE MOUNT
HIGH CURRENT
PNP SILICON TRANSISTOR
ELECTRICAL
SYMBOL
hFE
hFE
hFE
hFE
hFE
fT
Cob
CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
MAX
VCE=1.0V, IC=10mA
100
VCE=1.0V, IC=1.0A
100
200
300
VCE=1.0V, IC=3.0A
50
70
VCE=1.0V, IC=4.0A
30
45
VCE=1.0V, IC=10A
15
VCE=10V, IC=100mA, f=50MHz
150
VCB=10V, IE=0, f=1.0MHz
45
UNITS
MHz
pF
TLM833 CASE - MECHANICAL OUTLINE
REQUIRED MOUNTING PADS
(Dimensions in mm)
LEAD CODE:
1) Emitter
2) Emitter
3) Base
4) N.C.
5)
6)
7)
8)
Collector
Collector
Collector
Collector
MARKING CODE: CHA4
Failure to use this mouning pad layout may
result in damage to device.
R1 (17-February 2010)
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