Fairchild BAT54S QF40 Schottky barrier diode Datasheet

BAT54/A/C/S
Schottky Diodes
Connection Diagram
BAT54
BAT54A
3
3
3
3
L4P
2
1
1
2
MARKING
BAT54 = L4P BAT54A = L42
BAT54C = L43 BAT54S = L44
1
SOT-23
BAT54C
2NC
3
3
2
1
Absolute Maximum Ratings *
Symbol
2
1
BAT54S
2
1
Ta = 25°C unless otherwise noted
Parameter
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
30
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
600
mA
TSTG
Storage Temperature Range
-55 to +150
°C
TJ
Operating Junction Temperature
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Value
Unit
PD
Symbol
Power Dissipation
Parameter
290
mW
RθJA
Thermal Resistance, Junction to Ambient
430
°C/W
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
VR
Breakdown Voltage
IR = 10µA
VF
Forward Voltage
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
IR
Reverse Leakage
VR = 25V
CT
Total Capacitance
trr
Reverse Recovery Time
©2005 Fairchild Semiconductor Corporation
BAT54/A/C/S Rev. E1
Min.
Max.
30
Units
V
240
320
400
500
0.8
mV
mV
mV
mV
V
2
µA
VR = 1V, f = 1.0MHz
10
pF
IF = IR = 10mA, IRR = 1.0mA,
RL = 100Ω
5.0
ns
1
www.fairchildsemi.com
BAT54/A/C/S Schottky Diodes
February 2005
BAT54/A/C/S Schottky Diodes
Typical Performance Characteristics
Figure 1. Forward Voltage vs Temperature
Figure 2. Reverse Leakage Current
vs Temperature
0
10
10-3
-1
IR-Reverse Leakage Current [A]
10
IF-Forward Current [A]
-2
10
o
-25 C
-3
10
o
25 C
-4
10
o
75 C
-5
10
o
100 C
-6
10
0.0
o
125 C
-1
10-4
o
100 C
-2
10 -5
10
o
75 C
-3
10-6
o
-25 C
-4
10-7
-5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10-8
1.0
0
5
10
VF-Forward Voltage [V]
15
20
25
30
VR-Reverse Voltage [V]
Figure 3. Capacitance vs Reverse Bias Voltage
16
14
Capacitance [pF]
12
10
8
6
4
2
0
1
2
3
4
5
6
7
8
9
10
VR-Reverse Voltage [V]
BAT54/A/C/S Rev. E1
2
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Rev. I15
3
BAT54/A/C/S Rev. E1
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BAT54/A/C/S Schottky Diodes
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