TLP227G,TLP227G−2 TOSHIBA Photocoupler Photo Relay TLP227G,TLP227G−2 Cordless Telephone PBX Modem Unit in mm The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a plastic DIP package. The TLP227G series are a bi−directional switch which can replace mechanical relays in many applications. · TLP227G: 4 pin DIP(DIP4),1 channel type(1 form A) · TLP227G−2: 8 pin DIP(DIP8),2 channel type(2 form A) · Peak off−state voltage: 350V(min.) · Trigger LED current: 3mA(max.) · On−state current: 120mA(max.) · On−state resistance: 35Ω(max.) · Isolation voltage: 2500Vrms (min.) · Isolation thickness: 0.4mm(min.) Weight: 0.26g · BSI approved: BS EN60065: 1994,certificate no.8275 1 Form A TOSHIBA 11−5B2 4 3 1 2 BS EN60950: 1992,certificate no.8276 · Option(D4) type TUV approved: DIN VDE0884 / 06.92, certificate no.9850585 Pin Configuration (top view) TLP227G-2 TLP227G 1 4 2 3 1: Anode 2: Cathode 3: Drain 1 4: Drain 2 1 8 2 7 1, 3: Anode 2, 4: Cathode 5: Drain 1 3 6 6: Drain 2 7: Drain 3 8: Drain 4 4 TOSHIBA 11−10C4 Weight: 0.54g 2 Form A 8 5 1 4 5 1 2002-09-25 TLP227G,TLP227G−2 Internal Circuit (TLP227G) 1 4 2 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ∆IF / °C -0.5 mA / °C Peak forward current(100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VOFF 350 V Forward current LED Forward current derating(Ta ≥ 25°C) Off-state output terminal voltage TLP227G Detector On-state current TLP227G-2 120 ION One channel Both channel 120 100 (Note 1) -1.2 TLP227G On-state current derating(Ta ≥ 25°C) TLP227G-2 mA -1.2 ∆ION / °C One channel Both channel mA / °C -1.0 (Note 1) Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -40~85 °C Lead soldering temperature (10 s) Tsol 260 °C BVS 2500 Vrms Isolation voltage (AC,1 min., R.H.≤ 60%) (Note 2) (Note 1): Two channels operating simultaneously. (Note 2): Device considered a two-terminal device: LED side pins shorted together.and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VDD ― ― 280 V Forward current IF 5 7.5 25 mA On-state current ION ― ― 100 mA Operating temperature Topr -20 ― 65 °C 2 2002-09-25 TLP227G,TLP227G−2 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.0 1.15 1.3 V Reverse current IR VR=5V ― ― 10 µA Capacitance CT V=0,f=1MHz ― 30 ― pF Off-state current IOFF VOFF=350V ― — 1 µA Capacitance COFF V=0,f=1MHz ― 40 ― pF Min. Typ. Max. Unit ION=120mA ― 2 3 mA ION=120mA,IF=5mA ― 22 35 ― 26 40 Min. Typ. Max. Unit ― 0.8 ― pF 10 ― Ω 2500 ― ― AC,1 second(in oil) ― 5000 ― DC,1 minute(in oil) ― 5000 ― Vdc Min. Typ. Max. Unit Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Trigger LED current IFT On-state resistance RON Test Condition ION=20~120mA, IF=5mA Ω Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance Test Condition VS=0,=1MHz RS 10 VS=500V,R.H.≤ 60% 5×10 AC,1 minute Isolation voltage BVS 14 Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Turn-on time tON RL=200Ω ― 0.3 1 Turn-off time tOFF VDD=20V,IF=5mA ― 0.1 1 ms Switching Time Test Circuit TLP227G IF 1 4 2 3 RL VDD IF VOUT 90% VOUT tON 3 10% tOFF 2002-09-25 TLP227G,TLP227G−2 IF – Ta ION – Ta 100 140 (mA) On-state current ION Allowable forward current IF (mA) 120 80 60 40 20 100 80 60 40 20 0 －20 0 20 40 60 80 100 0 －20 120 0 20 Ambient temperature Ta (°C) Ta = 25°C 50 (mA) 30 1000 10 500 Forward current IF Allowable pulse forward current IFP (mA) 100 IF –VF 100 Pulse width ≤ 100µs Ta = 25°C 3000 80 60 Ambient temperature Ta (°C) IFP – DR 5000 40 300 100 50 30 10 3 5 3 1 0.5 0.3 3 10－ 2 10－ 3 3 10 －1 10 3 0.1 0.6 0 0.8 Duty cycle ratio DR 1.0 1.2 Forward voltage ∆VF / ∆Ta – IF 1.4 VF 1.6 1.8 2.6 3.0 (V) IFP – VFP 1000 －2.0 (mA) －2.4 300 IFP 500 100 Pulse forward current Forward voltage temperature coefficient ∆VF / ∆Ta (mV / °C) －2.8 －1.6 －1.2 －0.8 50 30 10 Pulse width ≤ 10µs 5 Repetitive 3 frequency = 100Hz Ta = 25°C －0.4 0.1 0.3 0.5 1 3 Forward current 5 IF 10 30 1 0.6 50 (mA) 1.0 1.4 1.8 2.2 Pulse forward voltage VFP (V) 4 2002-09-25 TLP227G,TLP227G−2 IFT – Ta 3.0 ION – VON 200 ION = Rated (mA) 2.0 On-state current ION Relative trigger LED current IFT / IFT (Ta = 25°C) 2.5 1.5 1.0 Ta = 25°C IF = 5mA 100 0 －100 0.5 0 －20 0 20 40 60 80 －200 －4 100 0 －2 Ambient temperature Ta (°C) On-state voltage RON – Ta 60 ION = Rated (V) VOFF = 350V 500 20 10 (nA) 30 0 4 IOFF – Ta 300 Off-state current IOFF (Ω) RON On-state resistance 40 VON 1000 IF = 5mA 50 2 100 50 30 10 5 3 －20 0 20 40 60 80 1 －20 100 Ambient temperature Ta (°C) 0 20 40 60 80 100 Ambient temperature Ta (°C) 5 2002-09-25 TLP227G,TLP227G−2 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-09-25