Microsemi APTC60DSKM24T3G Dual buck chopper super junction mosfet power module Datasheet

APTC60DSKM24T3G
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
Dual buck chopper
Super Junction MOSFET
Power Module
Application
• AC and DC motor control
• Switched Mode Power Supplies
13 14
Q1
Q2
Features
•
11
18
22
7
19
10
23
CR1
29
8
30
CR2
31
15
16
R1
28 27 26 25
23 22
•
•
32
•
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
buck of twice the current capability
• RoHS Compliant
20 19 18
29
16
30
15
31
14
13
32
2
3
4
7
8
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
95
70
260
±20
24
462
15
3
1900
Unit
V
A
August, 2009
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTC60DSKM24T3G – Rev 0
Symbol
VDSS
APTC60DSKM24T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 47.5A
VGS = VDS, ID = 5mA
VGS = ±20 V, VDS = 0V
2.1
3
Min
Typ
14.4
17
Max
350
600
24
3.9
200
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 25V
f = 1MHz
nF
300
VGS = 10V
VBus = 300V
ID = 95A
nC
68
102
21
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω
30
ns
100
45
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
1350
µJ
1040
2200
µJ
1270
Chopper diode ratings and characteristics
IF
VF
Maximum Reverse Leakage Current
VR=600V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 100A
IF = 200A
IF = 100A
IF = 100A
VR = 400V
di/dt=200A/µs
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Min
600
Tj = 25°C
Tj = 125°C
Tc = 80°C
Typ
Max
100
500
Tj = 125°C
100
1.6
2
1.3
Tj = 25°C
160
Tj = 125°C
220
Tj = 25°C
290
Tj = 125°C
1530
Unit
V
µA
A
2
V
August, 2009
IRM
Test Conditions
ns
nC
2–7
APTC60DSKM24T3G – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTC60DSKM24T3G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
Transistor
Diode
To heatsink
M4
Max
0.27
0.55
4000
-40
-40
-40
2.5
Unit
°C/W
V
150
125
100
4.7
110
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
T
T
⎝ 25
⎠⎦
⎣
SP3 Package outline (dimensions in mm)
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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3–7
APTC60DSKM24T3G – Rev 0
August, 2009
28
17
1
APTC60DSKM24T3G
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
280
720
VGS=15&10V
6.5V
560
ID, Drain Current (A)
6V
480
400
5.5V
320
240
5V
160
4.5V
80
4V
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
240
200
160
120
80
TJ=125°C
40
TJ=25°C
0
0
5
10
15
20
25
0
Normalized to
VGS=10V @ 95A
1.25
1.2
VGS=10V
1.15
1.1
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
100
RDS(on) vs Drain Current
1.3
VGS=20V
1.05
1
0.95
ID, DC Drain Current (A)
0.9
80
60
40
20
0
0
40
80
120 160 200 240 280
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
August, 2009
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
150
4–7
APTC60DSKM24T3G – Rev 0
ID, Drain Current (A)
640
1.1
1.0
0.9
0.8
25
50
75
100
125
150
ON resistance vs Temperature
3.0
2.0
1.5
1.0
0.5
0.0
25
TJ, Junction Temperature (°C)
1000
1.0
ID, Drain Current (A)
0.9
0.8
0.7
limited by RDSon
100
100 µs
0.6
1 ms
Single pulse
TJ=150°C
TC=25°C
10
10 ms
1
25
50
75
100
125
150
1
Coss
Ciss
10000
1000
Crss
10
0
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
1000000
100
100
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
100000
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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12
ID=95A
TJ=25°C
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0
40
80 120 160 200 240 280 320
Gate Charge (nC)
August, 2009
VGS(TH), Threshold Voltage
(Normalized)
50
75
100
125
150
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1.1
C, Capacitance (pF)
VGS=10V
ID= 95A
2.5
5–7
APTC60DSKM24T3G – Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTC60DSKM24T3G
APTC60DSKM24T3G
Delay Times vs Current
140
Rise and Fall times vs Current
70
td(off)
100
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
80
60
40
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
60
tr and tf (ns)
td(on)
20
50
40
30
tr
20
10
0
0
0
20 40 60 80 100 120 140 160
0
20
40
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy (mJ)
Eoff
2
1
VDS=400V
ID=95A
TJ=125°C
L=100µH
4
3
Eoff
Eon
2
1
0
0
20
40 60 80 100 120 140 160
ID, Drain Current (A)
0
Operating Frequency vs Drain Current
250
ZVS
200
ZCS
150
IDR, Reverse Drain Current (A)
300
VDS=400V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
100
hard
switching
50
0
10
20
30 40 50 60 70
ID, Drain Current (A)
80
5
10
15
20
25
Gate Resistance (Ohms)
90
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
August, 2009
Switching Energy (mJ)
Eon
0
Frequency (kHz)
80 100 120 140 160
5
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
3
60
ID, Drain Current (A)
Switching Energy vs Current
4
tf
VSD, Source to Drain Voltage (V)
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6–7
APTC60DSKM24T3G – Rev 0
td(on) and td(off) (ns)
120
APTC60DSKM24T3G
Typical chopper diode performance curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.2
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
TJ=125°C
150
TJ=25°C
100
50
0
0.0
0.5
1.0
1.5
2.0
100 A
200
150
50 A
100
50
2.5
0
200
QRR vs. Current Rate Charge
200 A
TJ=125°C
VR=400V
100 A
50 A
2
1
0
0
200
400
600
800
1000 1200
1000 1200
IRRM vs. Current Rate of Charge
60
200 A
TJ=125°C
VR=400V
50
100 A
40
50 A
30
20
10
0
0
200
400
-diF/dt (A/µs)
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
150
1400
1200
Duty Cycle = 0.5
TJ=175°C
125
1000
IF(AV) (A)
C, Capacitance (pF)
400 600 800
-diF/dt (A/µs)
800
600
100
75
50
400
25
200
0
August, 2009
3
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
VF, Anode to Cathode Voltage (V)
4
TJ=125°C
VR=400V
200 A
250
0
1
10
100
1000
VR, Reverse Voltage (V)
25
50
75
100
125
150
175
Case Temperature (°C)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7–7
APTC60DSKM24T3G – Rev 0
IF, Forward Current (A)
Trr vs. Current Rate of Charge
300
200
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