TEMD1000/1020/1030/1040 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description TEMD1000 TEMD1000 series are high speed silicon PIN photodiodes molded in SMT package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only. High on axis sensitivity is provided by a viewing angle of ± 15°. TEMD1020 TEMD1030 TEMD1040 Features • Extra fast response times • Radiant sensitive area A = 0.25 mm2 • Daylight filter • Versatile terminal configurations • Package matched to IR Emitter series TSMF1000 and TSML1000 • Angle of half sensitivity ϕ = ± 15° 18029 Applications High speed detector for SMT IR Detector for Daylight application Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Tamb ≤ 25 °C Power Dissipation Junction Temperature Symbol Value VR 60 Unit V PV 75 mW Tj 100 °C Storage Temperature Range Tstg - 40 to + 100 °C Operating Temperature Range Tstg - 40 to + 85 °C Tsd <260 °C t≤5s Soldering Temperature Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Typ. Max Unit 1.0 1.3 V Iro 1 10 nA CD 1.8 pF Ee = 1 mW/cm , λ = 870 nm, VR = 5 V Ira 10 µA Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 12 µA Temp. Coefficient of Ira VR = 5 V, λ = 870 nm TKIra 0.2 %/K Absolute Spectral Sensitivity VR = 5 V, λ = 870 nm s(λ) 0.60 A/W VR = 5 V, λ = 950 nm s(λ) 0.55 A/W Angle of Half Sensitivity ϕ ±15 deg Wavelength of Peak Sensitivity λp 900 nm Forward Voltage IF = 50 mA Breakdown Voltage IR = 100 µA, E = 0 Reverse Dark Current VR = 10 V, E = 0 Diode Capacitance VR = 5 V, f = 1 MHz, E = 0 Reverse Light Current Document Number 81564 Rev. 9, 21-May-03 Symbol Min VF 2 V(BR) 60 5 V www.vishay.com 1 TEMD1000/1020/1030/1040 VISHAY Vishay Semiconductors Parameter Test condition Range of Spectral Bandwidth Symbol Min Typ. Max Unit λ0.5 840 to 1050 nm Rise Time VR = 10 V, RL = 50 Ω, λ = 820 nm tr 4 ns Fall Time VR = 10 V, RL = 50 Ω, λ = 820 nm tf 4 ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 Ira - Reverse Light Current ( µ A ) I ro - Reverse Dark Current ( nA ) 1000 100 10 V R = 10 V 1 20 40 60 Tamb - Ambient Temperature ( ° C ) 94 8427 mW/cm 2 ) 8 C D - Diode Capacitance ( pF ) I ra rel - Relative Reverse Light Current 10 1 Figure 3. Reverse Light Current vs. Irradiance 1.4 VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 6 E=0 f = 1 MHz 4 2 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( °C ) Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.com 2 0.1 E e - Irradiance ( 16055 Figure 1. Reverse Dark Current vs. Ambient Temperature 94 8416 V =5V λ = 950 nm 1.0 0.1 0.01 100 80 10 0.1 94 8430 1 100 10 V R - Reverse Voltage ( V ) Figure 4. Diode Capacitance vs. Reverse Voltage Document Number 81564 Rev. 9, 21-May-03 TEMD1000/1020/1030/1040 VISHAY Vishay Semiconductors S ( λ ) rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 750 850 950 1150 1050 λ - Wavelength ( nm ) 12786 Figure 5. Relative Spectral Sensitivity vs. Wavelength Srel - Relative Sensitivity 0° 10° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8248 Figure 6. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81564 Rev. 9, 21-May-03 www.vishay.com 3 TEMD1000/1020/1030/1040 VISHAY Vishay Semiconductors Package Dimensions in mm TEMD1000 16159 Package Dimensions in mm TEMD1020 16160 www.vishay.com 4 Document Number 81564 Rev. 9, 21-May-03 VISHAY TEMD1000/1020/1030/1040 Vishay Semiconductors Package Dimensions in mm TEMD1030 16228 Package Dimensions in mm TEMD1040 16760 Document Number 81564 Rev. 9, 21-May-03 www.vishay.com 5 TEMD1000/1020/1030/1040 VISHAY Vishay Semiconductors Reel Dimensions 18033 www.vishay.com 6 Document Number 81564 Rev. 9, 21-May-03 VISHAY TEMD1000/1020/1030/1040 Vishay Semiconductors Taping TEMD1000 18030 Taping TEMD1020 18031 Document Number 81564 Rev. 9, 21-May-03 www.vishay.com 7 TEMD1000/1020/1030/1040 VISHAY Vishay Semiconductors Taping TEMD1030 18032 1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5°C to 35°C, R.H. 60% 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5°C to 35°C, R.H. 60%, devices should be treated at 60°C ± 5°C for 15 hrs. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3 www.vishay.com 8 Reflow Solder Profile 260 240 220 Temperature ( q C ) Precautions For Use 200 + 5 qC/s – 5 qC/s 180 160 140 120 60 s to 120 s 5s 100 80 60 0 17172 20 40 60 80 100 120 140 160 180 200 220 Time ( s ) Document Number 81564 Rev. 9, 21-May-03 TEMD1000/1020/1030/1040 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81564 Rev. 9, 21-May-03 www.vishay.com 9 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.