1SV331 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV331 Useful for VCO/TCXO • Small Package • High Capacitance Ratio : C1V/C4V = 3.75 (typ.) • Low Series Resistance : rs = 0.45 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Tstg −55~125 °C Storage temperature range Weight 0.0014 g 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2000-09-11 1/3 1SV331 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 µA 10 V Reverse current IR VR = 10 V 3 nA C1V VR = 1 V, f = 1 MHz 17 18 19 C4V VR = 4 V, f = 1 MHz 4.25 4.8 5.43 3.5 3.75 0.45 0.7 Ω Capacitance Capacitance ratio C1V/C4V Series resistance rs VR = 1 V, f = 470 MHz pF Marking V9 2000-09-11 2/3 1SV331 rs – VR CV – VR 100 0.6 f = 1 MHz f = 470 MHz (Ω) 0.5 Series resistance rs Capacitance CV (pF) Vsig = 100 m Vrms 10 0.4 0.3 0.2 0.1 1 0 1.0 2.0 3.0 4.0 Reverse voltage VR 5.0 (V) 6.0 0 0.1 1 Reverse voltage VR 10 (V) 2000-09-11 3/3